C. Jahan

1.5k citations

41 papers · 728 · h-index 14

Impact in

Hardware and Architecture top 5%
- VLSI and Analog Circuit Testing
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films

Papers in

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 23
- Advancements in Semiconductor Devices and Circuit Design 20
- Advanced Memory and Neural Computing 12
- Integrated Circuits and Semiconductor Failure Analysis 9
- Chalcogenide Semiconductor Thin Films 8
- Radiation Effects in Electronics 4
Materials Chemistry 14
- Phase-change materials and chalcogenides 13

Co-authors: L. Tosti (6 shared papers)Marc Gaillardin (6 shared papers)Philippe Paillet (5 shared papers)O. Faynot (4 shared papers)Jean‐Michel Hartmann (2 shared papers)O. Faynot (6 shared papers)V. Ferlet-Cavrois (3 shared papers)Véronique Ferlet-Cavrois (2 shared papers)
Journals: IEEE Transactions on Nuclear Science (5 papers)Microelectronics Reliability (4 papers)Journal of Crystal Growth (2 papers)Microelectronic Engineering (2 papers)Solid-State Electronics (2 papers)
Partner nations: France Italy United States

In The Last Decade

C. Jahan

40 papers receiving 696 citations

Peers

Countries citing papers authored by C. Jahan

Since Specialization

Citations

This map shows the geographic impact of C. Jahan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Jahan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Jahan more than expected).

Fields of papers citing papers by C. Jahan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Jahan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Jahan. The network helps show where C. Jahan may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Jahan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Jahan Line = papers co-authored together C. Jahan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 41 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, J. Baggio, J.R. Schwank, György Vizkelethy, M.R. Shaneyfelt, Kazuyuki Hirose, E. W. Blackmore, O. Faynot, C. Jahan, L. Tosti	2006	113
2	Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow, A. Torres, Marc Gaillardin, Joseph S. Melinger, A.R. Knudson, A.B. Campbell, J.R. Schwank, György Vizkelethy, M.R. Shaneyfelt, Kazuyuki Hirose, O. Faynot, C. Jahan, L. Tosti	2005	79
3	Total ionizing dose effects on deca-nanometer fully depleted SOI devices IEEE Transactions on Nuclear Science ·P. Paillet, Marc Gaillardin, Véronique Ferlet-Cavrois, A. Torres, O. Faynot, C. Jahan, L. Tosti, S. Cristoloveanu	2005	70
4	Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates Journal of Crystal Growth ·C. Jahan, O. Faynot, L. Tosti, Jean‐Michel Hartmann	2005	63
5	Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains Journal of Crystal Growth ·Jean‐Michel Hartmann, L. Clavelier, C. Jahan, P. Holliger, G. Rolland, T. Billon, Christophe Defranoux	2004	57
6	High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors Applied Physics Letters ·Marc Gaillardin, Philippe Paillet, Véronique Ferlet-Cavrois, S. Cristoloveanu, Olivier Faynot, C. Jahan	2006	48
7	Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation IEEE Transactions on Nuclear Science ·Daniela Munteanu, V. Ferlet-Cavrois, Jacques Autran, Philippe Paillet, J. Baggio, O. Faynot, C. Jahan, L. Tosti	2006	31
8	Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices A. Fantini, L. Perniola, M. Armand, J. F. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maı̂trejean, S. Lhostis, A. Roule, Cyril Dressler, G. Reimbold, B. De Salvo, P. Mazoyer, D. Bensahel, F. Boulanger	2009	29
9	Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors IEEE Transactions on Nuclear Science ·Marc Gaillardin, Philippe Paillet, Veronique Ferlet-Cavrois, J. Baggio, Dale McMorrow, Olivier Faynot, C. Jahan, L. Tosti, S. Cristoloveanu	2007	27
10	Lateral coupling and immunity to substrate effect in ΩFET devices Solid-State Electronics ·R. Ritzenthaler, S. Cristoloveanu, O. Faynot, C. Jahan, A. Kuriyama, L. Brévard, S. Deleonibus	2006	24
11	ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm C. Jahan, O. Faynot, M. Cassé, R. Ritzenthaler, L. Brévard, L. Tosti, X. Garros, C. Vizioz, F. Allain, Anne‐Marie Papon, H. Dansas, F. Martín, M. Vinet, B. Guillaumot, A. Toffoli, B. Giffard, S. Deleonibus	2005	18
12	Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB) Microelectronic Engineering ·G. Ghibaudo, P. Riess, S. Bruyère, B. DeSalvo, C. Jahan, A. Scarpa, G. Pananakakis, Emmanuel Vincent	1999	17
13	Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices Solid-State Electronics ·Manan Suri, Olivier Bichler, Q. Hubert, L. Perniola, Vladimir Sousa Santos, C. Jahan, D. Vuillaume, Christian Gamrat, B. DeSalvo	2012	17
14	Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM Materials Science in Semiconductor Processing ·Philippe Rodriguez, R. Famulok, Y. Le Friec, J.-P. Reynard, Benoit-Noel Bozon, F. Boyer, Karen Dabertrand, C. Jahan, S. Favier, Yann Mazel, B. Prévitali, Patrice Gergaud, F. Nemouchi	2017	17
15	Reset current reduction in phase-change memory cell using a thin interfacial oxide layer Q. Hubert, C. Jahan, A. Toffoli, L. Perniola, V. Sousa, A. Persico, J. F. Nodin, H. Grampeix, F. Aussenac, B. De Salvo	2011	10
16	Emerging memory technologies: Challenges and opportunities B. DeSalvo, Vladimir Sousa Santos, L. Perniola, C. Jahan, S. Maı̂trejean, J. F. Nodin, C. Cagli, V. Jousseaume, G. Molas, Elisa Vianello, C. Charpin, E. Jalaguier	2012	9
17	Electrical performances of SiO<inf>2</inf>-doped GeTe for phase-change memory applications G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, Elisa Vianello, B. De Salvo	2013	8
18	Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics Microelectronics Reliability ·C. Jahan, K. Barla, G. Ghibaudo	1997	8
19	Model for the oxide thickness dependence of SILC generation based on anode hole injection process Microelectronics Reliability ·C. Jahan, S. Bruyère, G. Ghibaudo, Emmanuel Vincent, K. Barla	1999	7
20	Effect of boron penetration on the stress induced leakage current in PMOS structures with p+ doped polysilicon gate Journal of Non-Crystalline Solids ·C. Jahan, K. Barla	1999	7

About C. Jahan

C. Jahan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials and Cellular and Molecular Neuroscience, having authored 41 papers that have together received 728 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Phase-change materials and chalcogenides (13 papers), Advanced Memory and Neural Computing (12 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Chalcogenide Semiconductor Thin Films (8 papers), Transition Metal Oxide Nanomaterials (6 papers) and Radiation Effects in Electronics (4 papers). The work is most often cited by research in Hardware and Architecture (84 citations), Electrical and Electronic Engineering (687 citations), Materials Chemistry (151 citations), Polymers and Plastics (39 citations) and Atomic and Molecular Physics, and Optics (49 citations). C. Jahan has collaborated with scholars based in France, Italy and United States. Frequent co-authors include L. Tosti, Marc Gaillardin, Philippe Paillet, O. Faynot, Jean‐Michel Hartmann, O. Faynot, V. Ferlet-Cavrois, Véronique Ferlet-Cavrois, J. Baggio and S. Cristoloveanu. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, Journal of Crystal Growth, Microelectronic Engineering and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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