L. Perniola

4.7k citations

138 papers · 3.0k · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 137
- Advanced Memory and Neural Computing 97
- Semiconductor materials and devices 72
- Ferroelectric and Negative Capacitance Devices 56
- Advancements in Semiconductor Devices and Circuit Design 24
- Chalcogenide Semiconductor Thin Films 20
Materials Chemistry 56
- Phase-change materials and chalcogenides 36
- Electronic and Structural Properties of Oxides 13

Co-authors: Elisa Vianello (52 shared papers)B. De Salvo (69 shared papers)C. Cagli (19 shared papers)Olivier Bichler (15 shared papers)J. Suñé (12 shared papers)E. Miranda (12 shared papers)B. DeSalvo (16 shared papers)Xiaojuan Lian (8 shared papers)
Journals: IEEE Transactions on Electron Devices (10 papers)Solid-State Electronics (10 papers)Microelectronic Engineering (7 papers)IEEE Transactions on Nanotechnology (4 papers)IEEE Electron Device Letters (4 papers)
Partner nations: France Italy Spain

In The Last Decade

L. Perniola

136 papers receiving 2.9k citations

Peers

Countries citing papers authored by L. Perniola

Since Specialization

Citations

This map shows the geographic impact of L. Perniola's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Perniola with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Perniola more than expected).

Fields of papers citing papers by L. Perniola

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Perniola. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Perniola. The network helps show where L. Perniola may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Perniola, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Perniola Line = papers co-authored together L. Perniola links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 138 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction HAL (Le Centre pour la Communication Scientifique Directe) ·Manan Suri, Olivier Bichler, Damien Querlioz, O. Cueto, L. Perniola, Véronique Sousa, D. Vuillaume, Christian Gamrat, B. DeSalvo	2011	228
2	HfO<sub>2</sub>-Based OxRAM Devices as Synapses for Convolutional Neural Networks IEEE Transactions on Electron Devices ·Daniele Garbin, Elisa Vianello, Olivier Bichler, Quentin Rafhay, Christian Gamrat, G. Ghibaudo, B. DeSalvo, L. Perniola	2015	157
3	Quantum-size effects in hafnium-oxide resistive switching Applied Physics Letters ·Shibing Long, Xiaojuan Lian, C. Cagli, Xavier Cartoixà, Riccardo Rurali, E. Miranda, David Jiménez, L. Perniola, Ming Liu, J. Suñé	2013	140
4	Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM Scientific Reports ·Shibing Long, L. Perniola, C. Cagli, Julien Buckley, Xiaojuan Lian, E. Miranda, Feng Pan, Ming Liu, J. Suñé	2013	137
5	A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown IEEE Electron Device Letters ·Shibing Long, Xiaojuan Lian, C. Cagli, L. Perniola, E. Miranda, Ming Liu, J. Suñé	2013	120
6	Physical aspects of low power synapses based on phase change memory devices Journal of Applied Physics ·Manan Suri, Olivier Bichler, Damien Querlioz, Boubacar Traoré, O. Cueto, L. Perniola, V. Sousa, D. Vuillaume, Christian Gamrat, (unknown)	2012	115
7	Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices IEEE Electron Device Letters ·Shibing Long, Xiaojuan Lian, Tianchun Ye, C. Cagli, L. Perniola, E. Miranda, Ming Liu, J. Suñé	2013	102
8	Fundamental variability limits of filament-based RRAM Institutional Research Information System University of Ferrara (University of Ferrara) ·Alessandro Grossi, E. Nowak, Cristian Zambelli, C. Pellissier, S. Bernasconi, G. Cibrario, (unknown), Romain Crochemore, J. F. Nodin, P. Olivo, L. Perniola	2016	98
9	HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and <italic>Ab Initio</italic> Calculations IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, Elisa Vianello, L. Perniola, B. De Salvo, Yoshio Nishi	2015	85
10	Chemical vapor deposition of Ge nanocrystals on SiO2 Applied Physics Letters ·T. Baron, B. Pelissier, L. Perniola, F. Mazen, J.‐M. Hartmann, G. Rolland	2003	77
11	On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, Elisa Vianello, H. Grampeix, S. Jeannot, L. Perniola, B. De Salvo, Yoshio Nishi	2015	77
12	Resistive Memories for Ultra-Low-Power embedded computing design Elisa Vianello, Olivier Thomas, G. Molas, Ogun Turkyilmaz, Natalija Jovanović, Daniele Garbin, Giorgio Palma, Mouhamad Alayan, Cam Nguyen, J. Coignus, Bastien Giraud, T. Benoist, Marina Reyboz, A. Toffoli, C. Charpin, F. Clermidy, L. Perniola	2014	69
13	Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·Alessandro Grossi, Elisa Vianello, Cristian Zambelli, Pablo Royer, Jean-Philippe Noël, Bastien Giraud, L. Perniola, P. Olivo, E. Nowak	2018	60
14	Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices Journal of Applied Physics ·Xiaojuan Lian, Xavier Cartoixà, E. Miranda, L. Perniola, Riccardo Rurali, Shibing Long, Ming Liu, J. Suñé	2014	54
15	Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting Frontiers in Neuroscience ·Thilo Werner, Elisa Vianello, Olivier Bichler, Daniele Garbin, Daniel Cattaert, Blaise Yvert, B. De Salvo, L. Perniola	2016	52
16	Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses HAL (Le Centre pour la Communication Scientifique Directe) ·Daniele Garbin, Olivier Bichler, Elisa Vianello, Quentin Rafhay, Christian Gamrat, L. Perniola, G. Ghibaudo, B. DeSalvo	2014	45
17	Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling IEEE Transactions on Electron Devices ·Elisa Vianello, F. Driussi, P. Blaise, Pierpaolo Palestri, David Esseni, L. Perniola, G. Molas, B. De Salvo, L. Selmi	2011	44
18	Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization IEEE Transactions on Electron Devices ·Jérémy Guy, G. Molas, P. Blaise, M. Bernard, Anne Roule, G. Le Carval, V. Delaye, A. Toffoli, G. Ghibaudo, Fabien Clermidy, B. De Salvo, L. Perniola	2015	43
19	Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs IEEE Transactions on Nanotechnology ·Pierre-Emmanuel Gaillardon, Davide Sacchetto, Giovanni Betti Beneventi, M. Haykel Ben Jamaa, L. Perniola, Fabien Clermidy, Ian O’Connor, Giovanni De Micheli	2012	40
20	A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory IEEE Transactions on Electron Devices ·Athanasios Kiouseloglou, G. Navarro, Véronique Sousa, Alain Persico, Anne Roule, A. Cabrini, G. Torelli, S. Maı̂trejean, G. Reimbold, B. De Salvo, Fabien Clermidy, L. Perniola	2014	39

About L. Perniola

L. Perniola is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Cellular and Molecular Neuroscience and Cognitive Neuroscience, having authored 138 papers that have together received 3.0k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (97 papers), Semiconductor materials and devices (72 papers), Ferroelectric and Negative Capacitance Devices (56 papers), Phase-change materials and chalcogenides (36 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Transition Metal Oxide Nanomaterials (21 papers), Chalcogenide Semiconductor Thin Films (20 papers) and Electronic and Structural Properties of Oxides (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.9k citations), Cellular and Molecular Neuroscience (710 citations), Polymers and Plastics (408 citations), Materials Chemistry (861 citations) and Cognitive Neuroscience (266 citations). L. Perniola has collaborated with scholars based in France, Italy and Spain. Frequent co-authors include Elisa Vianello, B. De Salvo, C. Cagli, Olivier Bichler, J. Suñé, E. Miranda, B. DeSalvo, Xiaojuan Lian, Ming Liu and Christian Gamrat. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Microelectronic Engineering, IEEE Transactions on Nanotechnology and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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