Steve Stoffels

4.0k citations

103 papers · 3.4k · h-index 35

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 95
- Semiconductor materials and devices 63
- Silicon Carbide Semiconductor Technologies 49
- Advanced MEMS and NEMS Technologies 8
Condensed Matter Physics 89
- GaN-based semiconductor devices and materials 89

Co-authors: Stefaan Decoutere (88 shared papers)M. Van Hove (38 shared papers)Denis Marcon (40 shared papers)Niels Posthuma (27 shared papers)Benoit Bakeroot (31 shared papers)Tian‐Li Wu (25 shared papers)Matteo Meneghini (26 shared papers)Enrico Zanoni (24 shared papers)
Journals: IEEE Transactions on Electron Devices (18 papers)IEEE Electron Device Letters (12 papers)Microelectronics Reliability (8 papers)Applied Physics Letters (4 papers)physica status solidi (a) (3 papers)
Partner nations: Belgium Italy Netherlands

In The Last Decade

Steve Stoffels

102 papers receiving 3.3k citations

Peers

Countries citing papers authored by Steve Stoffels

Since Specialization

Citations

This map shows the geographic impact of Steve Stoffels's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steve Stoffels with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steve Stoffels more than expected).

Fields of papers citing papers by Steve Stoffels

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steve Stoffels. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steve Stoffels. The network helps show where Steve Stoffels may publish in the future.

Co-authors

The 25 scholars most cited alongside Steve Stoffels, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Steve Stoffels Line = papers co-authored together Steve Stoffels links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 103 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Tian‐Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot, Steve Stoffels, M. Van Hove, G. Groeseneken, Stefaan Decoutere	2015	184
2	CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon IEEE Electron Device Letters ·M. Van Hove, S. Boulay, S.R. Bahl, Steve Stoffels, Xuanwu Kang, D. Wellekens, Karen Geens, Annelies Delabie, Stefaan Decoutere	2012	182
3	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, Niels Posthuma, E. Sangiorgi, Stefaan Decoutere, C. Fiegna	2016	148
4	Reliability and parasitic issues in GaN-based power HEMTs: a review Semiconductor Science and Technology ·Gaudenzio Meneghesso, Matteo Meneghini, Isabella Rossetto, Davide Bisi, Steve Stoffels, M. Van Hove, Stefaan Decoutere, Enrico Zanoni	2016	118
5	Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs IEEE Electron Device Letters ·Matteo Meneghini, Isabella Rossetto, Davide Bisi, Maria Ruzzarin, M. Van Hove, Steve Stoffels, Tian‐Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2016	109
6	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, N. Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere	2017	103
7	An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology Niels Posthuma, Shuzhen You, Steve Stoffels, D. Wellekens, H. Liang, Ming Zhao, Brice De Jaeger, Karen Geens, N. Ronchi, Stefaan Decoutere, P. Moens, Abhishek Banerjee, H. Ziad, M. Tack	2018	98
8	Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Benoit Bakeroot, A. Stockman, Niels Posthuma, Steve Stoffels, Stefaan Decoutere	2017	98
9	Kinetics of Buffer-Related R<sub>ON</sub>-Increase in GaN-on-Silicon MIS-HEMTs IEEE Electron Device Letters ·Davide Bisi, Matteo Meneghini, Fabio Alessio Marino, Denis Marcon, Steve Stoffels, M. Van Hove, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2014	94
10	PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, Paolo Magnone, Denis Marcon, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2017	87
11	Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications IEEE Transactions on Power Electronics ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, M. Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2013	77
12	Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot, Brice De Jaeger, M. Van Hove, N. Ronchi, R. Venegas, Hu Liang, Ming Zhao, G. Groeseneken, Stefaan Decoutere	2016	72
13	Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate physica status solidi (a) ·Davide Bisi, Matteo Meneghini, M. Van Hove, Denis Marcon, Steve Stoffels, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2015	71
14	GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion Ghent University Academic Bibliography (Ghent University) ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels Posthuma, Brice De Jaeger, Steve Stoffels, Benoit Bakeroot, D. Wellekens, Benjamin Vanhove, Thibault Cosnier, R. Langer, Denis Marcon, G. Groeseneken, Stefaan Decoutere	2019	68
15	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons Applied Physics Letters ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, M. Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2014	63
16	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs IEEE Transactions on Electron Devices ·Tian‐Li Wu, J. Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Steve Stoffels, M. Van Hove, G. Groeseneken, Stefaan Decoutere	2016	63
17	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, J. Franco, Steve Stoffels, M. Van Hove, Robin Roelofs, G. Groeseneken, Stefaan Decoutere	2015	61
18	Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics IEEE Transactions on Electron Devices ·M. Van Hove, Xuanwu Kang, Steve Stoffels, D. Wellekens, N. Ronchi, R. Venegas, Karen Geens, Stefaan Decoutere	2013	60
19	Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Ghent University Academic Bibliography (Ghent University) ·Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Denis Marcon, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, C. Fiegna	2017	59
20	Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Denis Marcon, Gaudenzio Meneghesso, Tian‐Li Wu, Steve Stoffels, Matteo Meneghini, Enrico Zanoni, Stefaan Decoutere	2013	59

About Steve Stoffels

Steve Stoffels is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 103 papers that have together received 3.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (89 papers), Semiconductor materials and devices (63 papers), Silicon Carbide Semiconductor Technologies (49 papers), Ga2O3 and related materials (27 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and interfaces (8 papers), Advanced MEMS and NEMS Technologies (8 papers) and Acoustic Wave Resonator Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Electrical and Electronic Engineering (2.8k citations), Atomic and Molecular Physics, and Optics (622 citations) and Materials Chemistry (521 citations). Steve Stoffels has collaborated with scholars based in Belgium, Italy and Netherlands. Frequent co-authors include Stefaan Decoutere, M. Van Hove, Denis Marcon, Niels Posthuma, Benoit Bakeroot, Tian‐Li Wu, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso and G. Groeseneken. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Applied Physics Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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