Benoit Bakeroot

3.1k citations

128 papers · 2.6k · h-index 30

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 116
- Semiconductor materials and devices 77
- Silicon Carbide Semiconductor Technologies 74
- Advancements in Semiconductor Devices and Circuit Design 32
- Electrostatic Discharge in Electronics 9
Condensed Matter Physics 101
- GaN-based semiconductor devices and materials 101

Co-authors: Stefaan Decoutere (93 shared papers)Steve Stoffels (31 shared papers)Niels Posthuma (30 shared papers)Shuzhen You (29 shared papers)G. Groeseneken (22 shared papers)Tian‐Li Wu (19 shared papers)Denis Marcon (15 shared papers)Brice De Jaeger (20 shared papers)
Journals: IEEE Transactions on Electron Devices (30 papers)IEEE Electron Device Letters (14 papers)Applied Physics Letters (7 papers)Microelectronics Reliability (7 papers)Solid-State Electronics (6 papers)
Partner nations: Belgium Italy Switzerland

In The Last Decade

Benoit Bakeroot

121 papers receiving 2.5k citations

Peers

Countries citing papers authored by Benoit Bakeroot

Since Specialization

Citations

This map shows the geographic impact of Benoit Bakeroot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoit Bakeroot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoit Bakeroot more than expected).

Fields of papers citing papers by Benoit Bakeroot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benoit Bakeroot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoit Bakeroot. The network helps show where Benoit Bakeroot may publish in the future.

Co-authors

The 25 scholars most cited alongside Benoit Bakeroot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Benoit Bakeroot Line = papers co-authored together Benoit Bakeroot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 128 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Tian‐Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot, Steve Stoffels, M. Van Hove, G. Groeseneken, Stefaan Decoutere	2015	187
2	Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination IEEE Electron Device Letters ·Silvia Lenci, Brice De Jaeger, L. Carbonell, Jie Hu, G. Mannaert, D. Wellekens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere	2013	123
3	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, N. Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere	2017	103
4	Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Benoit Bakeroot, A. Stockman, Niels Posthuma, Steve Stoffels, Stefaan Decoutere	2017	99
5	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman, F. Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, P. Moens	2018	94
6	Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot, Brice De Jaeger, M. Van Hove, N. Ronchi, R. Venegas, Hu Liang, Ming Zhao, G. Groeseneken, Stefaan Decoutere	2016	74
7	Observation of Dynamic V _TH of p-GaN Gate HEMTs by Fast Sweeping Characterization IEEE Electron Device Letters ·Xiangdong Li, Benoit Bakeroot, Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, G. Groeseneken, Stefaan Decoutere	2020	73
8	GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion Ghent University Academic Bibliography (Ghent University) ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels Posthuma, Brice De Jaeger, Steve Stoffels, Benoit Bakeroot, D. Wellekens, Benjamin Vanhove, Thibault Cosnier, R. Langer, Denis Marcon, G. Groeseneken, Stefaan Decoutere	2019	68
9	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs IEEE Transactions on Electron Devices ·Tian‐Li Wu, J. Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Steve Stoffels, M. Van Hove, G. Groeseneken, Stefaan Decoutere	2016	64
10	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, J. Franco, Steve Stoffels, M. Van Hove, Robin Roelofs, G. Groeseneken, Stefaan Decoutere	2015	61
11	On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors Journal of Applied Physics ·Benoit Bakeroot, Shuzhen You, Tian‐Li Wu, Jie Hu, M. Van Hove, Brice De Jaeger, Karen Geens, Steve Stoffels, Stefaan Decoutere	2014	60
12	Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Ghent University Academic Bibliography (Ghent University) ·Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Denis Marcon, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, C. Fiegna	2017	59
13	Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs Ghent University Academic Bibliography (Ghent University) ·Tian‐Li Wu, Denis Marcon, Brice De Jaeger, M. Van Hove, Benoit Bakeroot, Steve Stoffels, G. Groeseneken, Stefaan Decoutere, Robin Roelofs	2015	58
14	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman, E. Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, Benoit Bakeroot	2018	49
15	Gate Reliability of p-GaN HEMT With Gate Metal Retraction IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, Benoit Bakeroot, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2019	47
16	Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman, E. Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2019	46
17	Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs IEEE Transactions on Electron Devices ·Yogesh Singh Chauhan, Fran�ois Krummenacher, Renaud Gillon, Benoit Bakeroot, M. Declercq, Adrian M. Ionescu	2007	41
18	Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·A. Stockman, E. Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2021	39
19	Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, N. Ronchi, Andrea Natale Tallarico, D. Wellekens, Shuzhen You, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere	2016	39
20	Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates IEEE Transactions on Electron Devices ·Xiangdong Li, M. Van Hove, Ming Zhao, Benoit Bakeroot, Shuzhen You, G. Groeseneken, Stefaan Decoutere	2018	39

About Benoit Bakeroot

Benoit Bakeroot is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 128 papers that have together received 2.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (101 papers), Semiconductor materials and devices (77 papers), Silicon Carbide Semiconductor Technologies (74 papers), Ga2O3 and related materials (34 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers), Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (9 papers) and Electrostatic Discharge in Electronics (9 papers). The work is most often cited by research in Condensed Matter Physics (2.2k citations), Electronic, Optical and Magnetic Materials (973 citations), Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (455 citations) and Materials Chemistry (311 citations). Benoit Bakeroot has collaborated with scholars based in Belgium, Italy and Switzerland. Frequent co-authors include Stefaan Decoutere, Steve Stoffels, Niels Posthuma, Shuzhen You, G. Groeseneken, Tian‐Li Wu, Denis Marcon, Brice De Jaeger, M. Van Hove and A. Stockman. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Microelectronics Reliability and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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