Benoit Bakeroot

3.3k citations

132 papers · 2.7k · h-index 31

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Advanced DC-DC Converters

Papers in

Condensed Matter Physics 107
- GaN-based semiconductor devices and materials 107
Electrical and Electronic Engineering 35
- Silicon Carbide Semiconductor Technologies 23
- Advancements in Semiconductor Devices and Circuit Design 13
- Semiconductor materials and devices 4
- Advanced Power Amplifier Design 2
- Radiation Effects in Electronics 1

Co-authors: Stefaan Decoutere (97 shared papers)Steve Stoffels (31 shared papers)Niels E. Posthuma (30 shared papers)Shuzhen You (29 shared papers)G. Groeseneken (22 shared papers)Tian‐Li Wu (20 shared papers)Denis Marcon (15 shared papers)Brice De Jaeger (23 shared papers)
Journals: IEEE Transactions on Electron Devices (30 papers)IEEE Electron Device Letters (14 papers)Microelectronics Reliability (7 papers)Applied Physics Letters (7 papers)Solid-State Electronics (6 papers)
Partner nations: Belgium Italy Switzerland

In The Last Decade

Benoit Bakeroot

126 papers receiving 2.7k citations

Peers

Countries citing papers authored by Benoit Bakeroot

Since Specialization

Citations

This map shows the geographic impact of Benoit Bakeroot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benoit Bakeroot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benoit Bakeroot more than expected).

Fields of papers citing papers by Benoit Bakeroot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benoit Bakeroot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benoit Bakeroot. The network helps show where Benoit Bakeroot may publish in the future.

Co-authors

The 25 scholars most cited alongside Benoit Bakeroot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Benoit Bakeroot Line = papers co-authored together Benoit Bakeroot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 132 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Tian‐Li Wu, Denis Marcon, Shuzhen You, Niels E. Posthuma, Benoit Bakeroot, Steve Stoffels, Marleen Van Hove, G. Groeseneken	2015	198
2	Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination IEEE Electron Device Letters ·Silvia Lenci, Brice De Jaeger, Laureen Carbonell, Jie Hu, Geert Mannaert, Dirk Wellekens, Shuzhen You, Benoit Bakeroot	2013	127
3	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels E. Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon	2017	105
4	Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Benoit Bakeroot, Arno Stockman, Niels E. Posthuma, Steve Stoffels, Stefaan Decoutere	2017	102
5	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Arno Stockman, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, P. Moens	2018	101
6	Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization IEEE Electron Device Letters ·Xiangdong Li, Benoit Bakeroot, Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels E. Posthuma, Ming Zhao, Hu Liang	2020	76
7	Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot, Brice De Jaeger, Marleen Van Hove, Nicolo Ronchi, Rafael Venegas	2016	75
8	GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion Technical digest - International Electron Devices Meeting/Technical digest ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels E. Posthuma	2019	71
9	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs IEEE Transactions on Electron Devices ·Tian‐Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Steve Stoffels, Marleen Van Hove, G. Groeseneken	2016	69
10	On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors Journal of Applied Physics ·Benoit Bakeroot, Shuzhen You, Tian‐Li Wu, Jie Hu, Marleen Van Hove, Brice De Jaeger, Karen Geens, Steve Stoffels	2014	62
11	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove	2015	62
12	Failure mode for p-GaN gates under forward gate stress with varying Mg concentration IEEE International Reliability Physics Symposium proceedings ·Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Denis Marcon, Niels E. Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, C. Fiegna	2017	61
13	Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs IEEE International Reliability Physics Symposium proceedings ·Tian‐Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, G. Groeseneken, Stefaan Decoutere	2015	57
14	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs IEEE International Reliability Physics Symposium proceedings ·Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, Benoit Bakeroot	2018	53
15	Gate Reliability of p-GaN HEMT With Gate Metal Retraction IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels E. Posthuma, Benoit Bakeroot, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2019	51
16	Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2019	47
17	Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2021	44
18	TCAD methodology for simulation of GaN-HEMT power devices IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·Stephan Strauss, Axel Erlebach, Tommaso Cilento, Denis Marcon, Steve Stoffels, Benoit Bakeroot	2014	43
19	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability IEEE International Reliability Physics Symposium proceedings ·Steve Stoffels, Niels E. Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, E. Sangiorgi, C. Fiegna, Jia Xin Zheng	2019	43
20	Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You	2016	41

About Benoit Bakeroot

Benoit Bakeroot is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Nuclear Energy and Engineering, having authored 132 papers that have together received 2.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (107 papers), Silicon Carbide Semiconductor Technologies (23 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (4 papers), Analog and Mixed-Signal Circuit Design (4 papers), Semiconductor materials and interfaces (3 papers), Advanced Power Amplifier Design (2 papers) and Radiation Effects in Electronics (1 paper). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electrical and Electronic Engineering (711 citations), Electronic, Optical and Magnetic Materials (40 citations), Atomic and Molecular Physics, and Optics (45 citations) and Biomedical Engineering (26 citations). Benoit Bakeroot has collaborated with scholars based in Belgium, Italy and Switzerland. Frequent co-authors include Stefaan Decoutere, Steve Stoffels, Niels E. Posthuma, Shuzhen You, G. Groeseneken, Tian‐Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove and Arno Stockman. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Applied Physics Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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