Denis Marcon

4.6k citations

83 papers · 4.0k · 1 hit paper · h-index 34

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 78
- GaN-based semiconductor devices and materials 78
Electrical and Electronic Engineering 75
- Semiconductor materials and devices 58
- Silicon Carbide Semiconductor Technologies 36
- Advancements in Semiconductor Devices and Circuit Design 11
- Radio Frequency Integrated Circuit Design 5

Co-authors: Stefaan Decoutere (60 shared papers)Marleen Van Hove (46 shared papers)Steve Stoffels (39 shared papers)Tian‐Li Wu (24 shared papers)Gaudenzio Meneghesso (22 shared papers)Enrico Zanoni (22 shared papers)Matteo Meneghini (23 shared papers)Benoit Bakeroot (15 shared papers)
Journals: IEEE Electron Device Letters (10 papers)IEEE Transactions on Electron Devices (9 papers)Microelectronics Reliability (7 papers)Applied Physics Letters (5 papers)Solid-State Electronics (2 papers)
Partner nations: Belgium Italy United States

In The Last Decade

Denis Marcon

82 papers receiving 3.9k citations

Denis Marcon's Hit Papers

align trajectories log scale

The 2018 GaN power electronics roadmap 2018 · 1.1k citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2018 Journal of Physics D Applied Physics

Peers

Countries citing papers authored by Denis Marcon

Since Specialization

Citations

This map shows the geographic impact of Denis Marcon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Denis Marcon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Denis Marcon more than expected).

Fields of papers citing papers by Denis Marcon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Denis Marcon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Denis Marcon. The network helps show where Denis Marcon may publish in the future.

Co-authors

The 25 scholars most cited alongside Denis Marcon, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Denis Marcon Line = papers co-authored together Denis Marcon links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 83 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The 2018 GaN power electronics roadmap Journal of Physics D Applied Physics ·Hiroshi Amano, Yannick Baines, Edward Beam, Matteo Borga, Thierry Bouchet, Paul Raymond Chalker, Matthew Charles, Kevin Jing Chen Hit paper breakdown →	2018	1091
2	Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Tian‐Li Wu, Denis Marcon, Shuzhen You, Niels E. Posthuma, Benoit Bakeroot, Steve Stoffels, Marleen Van Hove, G. Groeseneken	2015	194
3	AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction IEEE Transactions on Electron Devices ·Enrico Zanoni, Matteo Meneghini, Alessandro Chini, Denis Marcon, Gaudenzio Meneghesso	2013	119
4	Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs IEEE Electron Device Letters ·Matteo Meneghini, Isabella Rossetto, Davide Bisi, Maria Ruzzarin, Marleen Van Hove, Steve Stoffels, Tian‐Li Wu, Denis Marcon	2016	115
5	Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate IEEE Electron Device Letters ·Farid Medjdoub, Joff Derluyn, Kai Cheng, Maarten Leys, Stefan Degroote, Denis Marcon, Domenica Visalli, Marleen Van Hove	2010	108
6	Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias Applied Physics Letters ·Matteo Meneghini, Antonio Stocco, Marco Bertin, Denis Marcon, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni	2012	107
7	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels E. Posthuma, Shuzhen You, N. Ronchi, Steve Stoffels, Denis Marcon	2017	105
8	Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs IEEE Electron Device Letters ·Davide Bisi, Matteo Meneghini, Fabio Alessio Marino, Denis Marcon, Steve Stoffels, Marleen Van Hove, Stefaan Decoutere, Gaudenzio Meneghesso	2014	102
9	Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal IEEE Electron Device Letters ·Puneet Srivastava, Joyonta Das, Domenica Visalli, Marleen Van Hove, Paweł E. Malinowski, Denis Marcon, Silvia Lenci, Karen Geens	2010	102
10	PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels E. Posthuma, Paolo Magnone, Denis Marcon, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2017	91
11	Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications IEEE Transactions on Power Electronics ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, Marleen Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso	2013	80
12	Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate physica status solidi (a) ·Davide Bisi, Matteo Meneghini, Marleen Van Hove, Denis Marcon, Steve Stoffels, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso	2015	77
13	A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs Padua Research Archive (University of Padova) ·Denis Marcon, Thomas Kauerauf, Farid Medjdoub, Joyonta Das, Marleen Van Hove, Puneet Srivastava, Kai Cheng, Maarten Leys	2010	77
14	GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion Ghent University Academic Bibliography (Ghent University) ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels E. Posthuma	2019	71
15	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs IEEE Transactions on Electron Devices ·Tian‐Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Steve Stoffels, Marleen Van Hove, G. Groeseneken	2016	68
16	200mm GaN-on-Si epitaxy and e-mode device technology Denis Marcon, Y. N. Saripalli, Stefaan Decoutere	2015	67
17	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons Applied Physics Letters ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, Marleen Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso	2014	65
18	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, Jacopo Franco, Steve Stoffels, Marleen Van Hove	2015	62
19	Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Denis Marcon, Gaudenzio Meneghesso, Tian‐Li Wu, Steve Stoffels, Matteo Meneghini, Enrico Zanoni, Stefaan Decoutere	2013	60
20	Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Ghent University Academic Bibliography (Ghent University) ·Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Denis Marcon, Niels E. Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, C. Fiegna	2017	60

About Denis Marcon

Denis Marcon is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 83 papers that have together received 4.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (78 papers), Semiconductor materials and devices (58 papers), Silicon Carbide Semiconductor Technologies (36 papers), Ga2O3 and related materials (26 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (9 papers), ZnO doping and properties (6 papers) and Radio Frequency Integrated Circuit Design (5 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (3.1k citations), Atomic and Molecular Physics, and Optics (646 citations) and Materials Chemistry (733 citations). Denis Marcon has collaborated with scholars based in Belgium, Italy and United States. Frequent co-authors include Stefaan Decoutere, Marleen Van Hove, Steve Stoffels, Tian‐Li Wu, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Benoit Bakeroot, Niels E. Posthuma and G. Groeseneken. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronics Reliability, Applied Physics Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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