Niels Posthuma

2.9k citations

112 papers · 2.5k · h-index 29

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 104
- Silicon and Solar Cell Technologies 45
- Semiconductor materials and devices 44
- Silicon Carbide Semiconductor Technologies 37
- Thin-Film Transistor Technologies 21
- solar cell performance optimization 15
Condensed Matter Physics 57
- GaN-based semiconductor devices and materials 57

Co-authors: Stefaan Decoutere (56 shared papers)Steve Stoffels (27 shared papers)Benoit Bakeroot (30 shared papers)Andrea Natale Tallarico (17 shared papers)Shuzhen You (14 shared papers)C. Fiegna (17 shared papers)Jef Poortmans (32 shared papers)Denis Marcon (9 shared papers)
Journals: IEEE Transactions on Electron Devices (12 papers)IEEE Electron Device Letters (9 papers)Microelectronics Reliability (6 papers)Solar Energy Materials and Solar Cells (5 papers)Progress in Photovoltaics Research and Applications (4 papers)
Partner nations: Belgium Italy Netherlands

In The Last Decade

Niels Posthuma

110 papers receiving 2.4k citations

Peers

Countries citing papers authored by Niels Posthuma

Since Specialization

Citations

This map shows the geographic impact of Niels Posthuma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Niels Posthuma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Niels Posthuma more than expected).

Fields of papers citing papers by Niels Posthuma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Niels Posthuma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Niels Posthuma. The network helps show where Niels Posthuma may publish in the future.

Co-authors

The 25 scholars most cited alongside Niels Posthuma, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Niels Posthuma Line = papers co-authored together Niels Posthuma links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors IEEE Electron Device Letters ·Tian‐Li Wu, Denis Marcon, Shuzhen You, Niels Posthuma, Benoit Bakeroot, Steve Stoffels, M. Van Hove, G. Groeseneken, Stefaan Decoutere	2015	187
2	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone, Niels Posthuma, E. Sangiorgi, Stefaan Decoutere, C. Fiegna	2016	151
3	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, N. Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere	2017	103
4	Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Benoit Bakeroot, A. Stockman, Niels Posthuma, Steve Stoffels, Stefaan Decoutere	2017	99
5	An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology Niels Posthuma, Shuzhen You, Steve Stoffels, D. Wellekens, H. Liang, Ming Zhao, Brice De Jaeger, Karen Geens, N. Ronchi, Stefaan Decoutere, P. Moens, Abhishek Banerjee, H. Ziad, M. Tack	2018	98
6	PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, Paolo Magnone, Denis Marcon, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2017	88
7	Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance Niels Posthuma, Shuzhen You, H. Liang, N. Ronchi, Xuanwu Kang, D. Wellekens, Y. N. Saripalli, Stefaan Decoutere	2016	81
8	Cost-efficient thermophotovoltaic cells based on germanium substrates Solar Energy Materials and Solar Cells ·J. van der Heide, Niels Posthuma, Giovanni Flamand, Wim Geens, Jef Poortmans	2009	74
9	Emitter Formation and Contact Realization by Diffusion for Germanium Photovoltaic Devices IEEE Transactions on Electron Devices ·Niels Posthuma, J. van der Heide, Giovanni Flamand, J. Poortmans	2007	73
10	Observation of Dynamic V _TH of p-GaN Gate HEMTs by Fast Sweeping Characterization IEEE Electron Device Letters ·Xiangdong Li, Benoit Bakeroot, Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, G. Groeseneken, Stefaan Decoutere	2020	73
11	GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion Ghent University Academic Bibliography (Ghent University) ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels Posthuma, Brice De Jaeger, Steve Stoffels, Benoit Bakeroot, D. Wellekens, Benjamin Vanhove, Thibault Cosnier, R. Langer, Denis Marcon, G. Groeseneken, Stefaan Decoutere	2019	68
12	Surface passivation for germanium photovoltaic cells Solar Energy Materials and Solar Cells ·Niels Posthuma, Giovanni Flamand, Wim Geens, Jef Poortmans	2004	60
13	Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Ghent University Academic Bibliography (Ghent University) ·Steve Stoffels, Benoit Bakeroot, Tian‐Li Wu, Denis Marcon, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, C. Fiegna	2017	59
14	Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation IEEE Electron Device Letters ·Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2019	52
15	Gate Reliability of p-GaN HEMT With Gate Metal Retraction IEEE Transactions on Electron Devices ·Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma, Benoit Bakeroot, Stefaan Decoutere, E. Sangiorgi, C. Fiegna	2019	47
16	Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs IEEE Transactions on Electron Devices ·Matteo Borga, Matteo Meneghini, Steve Stoffels, Xiangdong Li, Niels Posthuma, M. Van Hove, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2018	46
17	Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs IEEE Transactions on Electron Devices ·Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, M. Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2017	46
18	Wearable battery-free wireless 2-channel EEG systems powerd by energy scavengers Mieke Van Bavel, Vladimir Leonov, Refet Fırat Yazıcıoğlu, Tom Torfs, Chris Van Hoof, Niels Posthuma, Ruud Vullers	2008	41
19	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability Ghent University Academic Bibliography (Ghent University) ·Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, E. Sangiorgi, C. Fiegna, Jia Xin Zheng, Xiaohua Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, J. Priesol, A. Šatka	2019	38
20	Simple power-loss analysis method for high-efficiency Interdigitated Back Contact (IBC) silicon solar cells Solar Energy Materials and Solar Cells ·Pierre Verlinden, Monica Alemán, Niels Posthuma, Jara Fernández, Bartek Pawlak, Jo Robbelein, Maarten Debucquoy, K. Van Wichelen, Jef Poortmans	2012	37

About Niels Posthuma

Niels Posthuma is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 112 papers that have together received 2.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (57 papers), Silicon and Solar Cell Technologies (45 papers), Semiconductor materials and devices (44 papers), Silicon Carbide Semiconductor Technologies (37 papers), Semiconductor materials and interfaces (22 papers), Thin-Film Transistor Technologies (21 papers), solar cell performance optimization (15 papers) and Ga2O3 and related materials (14 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (753 citations), Electrical and Electronic Engineering (2.0k citations), Atomic and Molecular Physics, and Optics (559 citations) and Materials Chemistry (475 citations). Niels Posthuma has collaborated with scholars based in Belgium, Italy and Netherlands. Frequent co-authors include Stefaan Decoutere, Steve Stoffels, Benoit Bakeroot, Andrea Natale Tallarico, Shuzhen You, C. Fiegna, Jef Poortmans, Denis Marcon, E. Sangiorgi and Giovanni Flamand. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Solar Energy Materials and Solar Cells and Progress in Photovoltaics Research and Applications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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