Maojun Wang

3.0k citations

155 papers · 2.4k · h-index 27

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 134
- GaN-based semiconductor devices and materials 134
Electrical and Electronic Engineering 126
- Semiconductor materials and devices 86
- Silicon Carbide Semiconductor Technologies 43
- Advancements in Semiconductor Devices and Circuit Design 24

Co-authors: Kevin J. Chen (25 shared papers)Bo Shen (76 shared papers)Yilong Hao (41 shared papers)Jinyan Wang (52 shared papers)Cheng P. Wen (31 shared papers)Bing Xie (25 shared papers)Wengang Wu (28 shared papers)Jin Wei (55 shared papers)
Journals: IEEE Electron Device Letters (33 papers)IEEE Transactions on Electron Devices (29 papers)Applied Physics Letters (9 papers)Electronics Letters (3 papers)Electronics (3 papers)
Partner nations: China Hong Kong Poland

In The Last Decade

Maojun Wang

142 papers receiving 2.3k citations

Peers

Countries citing papers authored by Maojun Wang

Since Specialization

Citations

This map shows the geographic impact of Maojun Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maojun Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maojun Wang more than expected).

Fields of papers citing papers by Maojun Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maojun Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maojun Wang. The network helps show where Maojun Wang may publish in the future.

Co-authors

The 25 scholars most cited alongside Maojun Wang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Maojun Wang Line = papers co-authored together Maojun Wang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 155 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique IEEE Electron Device Letters ·Ye Wang, Maojun Wang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, Bo Shen	2013	164
2	Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer IEEE Electron Device Letters ·Shenghou Liu, Shu Yang, Zhikai Tang, Qimeng Jiang, Cheng Liu, Maojun Wang, Kevin J. Chen	2014	105
3	Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer Applied Physics Letters ·Shenghou Liu, Shu Yang, Zhikai Tang, Qimeng Jiang, Cheng Liu, Maojun Wang, Bo Shen, Kevin J. Chen	2015	95
4	Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping IEEE Electron Device Letters ·Maojun Wang, Kevin J. Chen	2011	95
5	Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices IEEE Transactions on Electron Devices ·Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Jie Fan, Jingyuan Shi, Wei Ke, Yingkui Zheng, Hongwei Gao, Qian Sun, Maojun Wang, Bo Shen, Kevin J. Chen	2017	89
6	900 V/1.6 <inline-formula> <tex-math notation="TeX">${\rm m}\Omega\cdot{\rm cm}^{2}$ </tex-math></inline-formula> Normally Off <inline-formula> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ </tex-math></inline-formula> MOSFET on Silicon Substrate IEEE Transactions on Electron Devices ·Maojun Wang, Ye Wang, Chuan Zhang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, Bo Shen	2014	78
7	Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique IEEE Electron Device Letters ·Zhe Xü, Jinyan Wang, Yang Liu, Jinbao Cai, Jingqian Liu, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang	2013	77
8	Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique IEEE Transactions on Electron Devices ·Maojun Wang, Kevin J. Chen	2010	65
9	Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement IEEE Electron Device Letters ·Maojun Wang, Dawei Yan, Chuan Zhang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Bo Shen	2014	62
10	A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices IEEE Electron Device Letters ·Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, Bo Shen	2016	60
11	Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance IEEE Electron Device Letters ·Yue Li, Maojun Wang, Ruiyuan Yin, Jie Zhang, Ming Tao, Bing Xie, Yilong Hao, Xuelin Yang, Cheng P. Wen, Bo Shen	2020	60
12	Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition Scientific Reports ·Jianpeng Cheng, Xuelin Yang, Ling Sang, Lei Guo, Jie Zhang, Jiaming Wang, Chenguang He, Lisheng Zhang, Maojun Wang, Fujun Xu, Ning Tang, Zhixin Qin, Xinqiang Wang, Bo Shen	2016	59
13	High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT IEEE Electron Device Letters ·Zhe Xü, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiao‐Ping Li, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao	2014	54
14	An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps IEEE Electron Device Letters ·Yanlin Wu, Jin Wei, Maojun Wang, Muqin Nuo, Junjie Yang, Wei Lin, Zheyang Zheng, Li Zhang, Mengyuan Hua, Xuelin Yang, Yilong Hao, Kevin J. Chen, Bo Shen	2022	51
15	Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process IEEE Transactions on Electron Devices ·Ming Tao, Shaofei Liu, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, Bo Shen, Maojun Wang	2018	49
16	Low ON-Resistance GaN Schottky Barrier Diode With High <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ON}}$ </tex-math> </inline-formula> Uniformity Using LPCVD Si₃N₄ Compatible Self-Terminated, Low Damage Anode Recess Technology IEEE Electron Device Letters ·Jingnan Gao, Yufeng Jin, Bing Xie, Cheng P. Wen, Yilong Hao, Bo Shen, Maojun Wang	2018	48
17	Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Maojun Wang, Kevin J. Chen	2010	46
18	Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate IEEE Transactions on Electron Devices ·Chuan Zhang, Maojun Wang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, Bo Shen	2015	41
19	Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si₃N₄as the Mask IEEE Transactions on Electron Devices ·Jingnan Gao, Yufeng Jin, Yilong Hao, Bing Xie, Cheng P. Wen, Bo Shen, Maojun Wang	2018	37
20	Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMTs with an In-Situ Si₃N₄ Interfacial Layer IEEE Transactions on Electron Devices ·Hui Sun, Maojun Wang, Ruiyuan Yin, Jianguo Chen, Shuai Xue, Jiansheng Luo, Yilong Hao, Dongmin Chen	2019	36

About Maojun Wang

Maojun Wang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 155 papers that have together received 2.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (134 papers), Semiconductor materials and devices (86 papers), Ga2O3 and related materials (56 papers), Silicon Carbide Semiconductor Technologies (43 papers), Semiconductor Quantum Structures and Devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), ZnO doping and properties (18 papers) and Metal and Thin Film Mechanics (8 papers). The work is most often cited by research in Condensed Matter Physics (2.1k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Electrical and Electronic Engineering (1.8k citations), Atomic and Molecular Physics, and Optics (434 citations) and Materials Chemistry (401 citations). Maojun Wang has collaborated with scholars based in China, Hong Kong and Poland. Frequent co-authors include Kevin J. Chen, Bo Shen, Yilong Hao, Jinyan Wang, Cheng P. Wen, Bing Xie, Wengang Wu, Jin Wei, Xuelin Yang and Junjie Yang. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Electronics Letters and Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Maojun Wang

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About Maojun Wang

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