P. Moens

4.3k citations

175 papers · 3.1k · h-index 30

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics

Papers in

Electrical and Electronic Engineering 146
- Silicon Carbide Semiconductor Technologies 99
- Semiconductor materials and devices 95
- Advancements in Semiconductor Devices and Circuit Design 79
- Electrostatic Discharge in Electronics 36
- Electromagnetic Compatibility and Noise Suppression 14
Condensed Matter Physics 53
- GaN-based semiconductor devices and materials 53

Co-authors: M. Tack (46 shared papers)Gaudenzio Meneghesso (32 shared papers)Matteo Meneghini (33 shared papers)Abhishek Banerjee (20 shared papers)Enrico Zanoni (28 shared papers)G. Groeseneken (14 shared papers)G. Van den bosch (13 shared papers)Freddy Callens (21 shared papers)
Journals: Microelectronics Reliability (12 papers)IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (11 papers)IEEE Transactions on Device and Materials Reliability (4 papers)Journal of Applied Physics (3 papers)
Partner nations: Belgium United States Italy

In The Last Decade

P. Moens

173 papers receiving 3.0k citations

Peers

Countries citing papers authored by P. Moens

Since Specialization

Citations

This map shows the geographic impact of P. Moens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Moens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Moens more than expected).

Fields of papers citing papers by P. Moens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Moens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Moens. The network helps show where P. Moens may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Moens, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Moens Line = papers co-authored together P. Moens links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 175 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Michael J. Uren, Serge Karboyan, Indranil Chatterjee, Alexander Pooth, P. Moens, Abhishek Banerjee, Martin Kuball	2017	188
2	Hot-Carrier Degradation Phenomena in Lateral and Vertical DMOS Transistors IEEE Transactions on Electron Devices ·P. Moens, G. Vandenbosch, G. Groeseneken	2004	113
3	Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli, Stefano Dalcanale, Carlo De Santi, P. Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso	2017	109
4	Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage IEEE Transactions on Electron Devices ·Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri, Stefano Dalcanale, Abhishek Banerjee, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, P. Moens	2015	103
5	An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology Niels Posthuma, Shuzhen You, Steve Stoffels, D. Wellekens, H. Liang, Ming Zhao, Brice De Jaeger, Karen Geens, N. Ronchi, Stefaan Decoutere, P. Moens, Abhishek Banerjee, H. Ziad, M. Tack	2018	95
6	On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices Research Padua Archive (University of Padua) ·P. Moens, P. Vanmeerbeek, Abhishek Banerjee, J. Guo, C. Liu, P. Coppens, Amar K. Salih, M. Tack, Markus Caesar, Michael J. Uren, Martin Kuball, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni	2015	93
7	Characterization of Total Safe Operating Area of Lateral DMOS Transistors IEEE Transactions on Device and Materials Reliability ·P. Moens, G. Van den bosch	2006	90
8	Trapping phenomena and degradation mechanisms in GaN-based power HEMTs Materials Science in Semiconductor Processing ·Matteo Meneghini, Alaleh Tajalli, P. Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso	2017	89
9	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·A. Stockman, F. Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, P. Moens	2018	88
10	An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric P. Moens, C. Liu, Abhishek Banerjee, P. Vanmeerbeek, P. Coppens, H. Ziad, A. Constant, Z. Li, Herbert De Vleeschouwer, Jaume Roig-Guitart, P. Gassot, F. Bauwens, E. De Backer, Balaji Padmanabhan, Ali Salih, J. M. Parsey, M. Tack	2014	87
11	Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs Bristol Research (University of Bristol) ·P. Moens, Abhishek Banerjee, Michael J. Uren, Matteo Meneghini, Serge Karboyan, Indranil Chatterjee, P. Vanmeerbeek, Markus Cäsar, C. Liu, Ali Salih, Enrico Zanoni, Gaudenzio Meneghesso, Martin Kuball, M. Tack	2015	71
12	An EPR study of intact and powdered human tooth enamel dried at 400�C Calcified Tissue International ·Freddy Callens, P. Moens, R. M. H. Verbeeck	1995	69
13	Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors IEEE Electron Device Letters ·Michael J. Uren, Markus Caesar, Serge Karboyan, P. Moens, P. Vanmeerbeek, Martin Kuball	2015	62
14	Hot Hole Degradation Effects in Lateral nDMOS Transistors IEEE Transactions on Electron Devices ·P. Moens, G. Vandenbosch, C. DeKeukeleire, R. Degraeve, M. Tack, G. Groeseneken	2004	62
15	A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors P. Moens, Johann Mertens, F. Bauwens, Pierre Joris, W. De Ceuninck, M. Tack	2007	51
16	Adsorption of carbonate-derived molecules on the surface of carbonate-containing apatites Journal of the Chemical Society Faraday Transactions ·P. Moens, Freddy Callens, P. Matthys, F. Maes, R. M. H. Verbeeck, D. E. Naessens	1991	50
17	A novel hot-hole injection degradation model for lateral nDMOS transistors P. Moens, M. Tack, R. Degraeve, G. Groeseneken	2002	47
18	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman, E. Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, Benoit Bakeroot	2018	46
19	Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs Ghent University Academic Bibliography (Ghent University) ·A. Stockman, E. Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2019	44
20	XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit P. Moens, F. Bauwens, J. Baele, Konstantin Vershinin, E. De Backer, E.M. Sankara Narayanan, M. Tack	2006	42

About P. Moens

P. Moens is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 175 papers that have together received 3.1k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (99 papers), Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers), GaN-based semiconductor devices and materials (53 papers), Electrostatic Discharge in Electronics (36 papers), Electromagnetic Compatibility and Noise Suppression (14 papers), Ga2O3 and related materials (13 papers) and Solid-state spectroscopy and crystallography (8 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electrical and Electronic Engineering (2.5k citations), Electronic, Optical and Magnetic Materials (606 citations), Radiation (109 citations) and Atomic and Molecular Physics, and Optics (307 citations). P. Moens has collaborated with scholars based in Belgium, United States and Italy. Frequent co-authors include M. Tack, Gaudenzio Meneghesso, Matteo Meneghini, Abhishek Banerjee, Enrico Zanoni, G. Groeseneken, G. Van den bosch, Freddy Callens, A. Stockman and P. Vanmeerbeek. Their work appears in journals such as Microelectronics Reliability, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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