P. Moens

4.4k citations

177 papers · 3.8k · 1 hit paper · h-index 31

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Radiation Effects in Electronics

Papers in

Condensed Matter Physics 55
- GaN-based semiconductor devices and materials 55
Electrical and Electronic Engineering 120
- Silicon Carbide Semiconductor Technologies 97
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 29
- Electrostatic Discharge in Electronics 18
- Integrated Circuits and Semiconductor Failure Analysis 3

Co-authors: Gaudenzio Meneghesso (34 shared papers)Matteo Meneghini (36 shared papers)Marnix Tack (48 shared papers)Abhishek Banerjee (21 shared papers)Enrico Zanoni (30 shared papers)Geert Van den Bosch (13 shared papers)G. Groeseneken (14 shared papers)Arno Stockman (20 shared papers)
Journals: Microelectronics Reliability (13 papers)IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (11 papers)IEEE Transactions on Device and Materials Reliability (4 papers)Journal of Applied Physics (3 papers)
Partner nations: Belgium Italy United States

In The Last Decade

P. Moens

173 papers receiving 3.6k citations

P. Moens's Hit Papers

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β-Gallium oxide power electronics 2022 · 447 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2022 APL Materials

Peers

Countries citing papers authored by P. Moens

Since Specialization

Citations

This map shows the geographic impact of P. Moens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Moens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Moens more than expected).

Fields of papers citing papers by P. Moens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Moens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Moens. The network helps show where P. Moens may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Moens, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Moens Line = papers co-authored together P. Moens links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 177 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	β-Gallium oxide power electronics APL Materials ·Andrew Green, James S. Speck, Grace Huili Xing, P. Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue Hit paper breakdown →	2022	447
2	“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Michael J. Uren, Serge Karboyan, Indranil Chatterjee, Alexander Pooth, P. Moens, Abhishek Banerjee, Martin Kuball	2017	216
3	Hot-Carrier Degradation Phenomena in Lateral and Vertical DMOS Transistors IEEE Transactions on Electron Devices ·P. Moens, Guy A. E. Vandenbosch, G. Groeseneken	2004	119
4	Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli, Stefano Dalcanale, Carlo De Santi, P. Moens, Abhishek Banerjee, Enrico Zanoni	2017	117
5	Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage IEEE Transactions on Electron Devices ·Matteo Meneghini, Piet Vanmeerbeek, Riccardo Silvestri, Stefano Dalcanale, Abhishek Banerjee, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso	2015	116
6	On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·P. Moens, Piet Vanmeerbeek, Abhishek Banerjee, J. Guo, C. Liu, Peter Coppens, Ali S. M. Salih, Marnix Tack	2015	104
7	Trapping phenomena and degradation mechanisms in GaN-based power HEMTs Materials Science in Semiconductor Processing ·Matteo Meneghini, Alaleh Tajalli, P. Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso	2017	101
8	An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·Niels E. Posthuma, Shuzhen You, Steve Stoffels, Dirk Wellekens, Hao Liang, Ming Zhao, Brice De Jaeger, Karen Geens	2018	101
9	Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Arno Stockman, Fabrizio Masin, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Benoit Bakeroot, P. Moens	2018	101
10	Characterization of Total Safe Operating Area of Lateral DMOS Transistors IEEE Transactions on Device and Materials Reliability ·P. Moens, Geert Van den Bosch	2006	100
11	An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·P. Moens, C. Liu, Piet Vanmeerbeek, Peter Coppens, H. Ziad, A. Constant, Z. Li, Herbert De Vleeschouwer	2014	97
12	Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs Technical digest - International Electron Devices Meeting/Technical digest ·P. Moens, Michael J. Uren, Matteo Meneghini, Serge Karboyan, Indranil Chatterjee, Piet Vanmeerbeek, Markus Cäsar, C. Liu	2015	76
13	Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors IEEE Electron Device Letters ·Michael J. Uren, Markus Caesar, Serge Karboyan, P. Moens, Piet Vanmeerbeek, Martin Kuball	2015	71
14	Hot Hole Degradation Effects in Lateral nDMOS Transistors IEEE Transactions on Electron Devices ·P. Moens, Guy A. E. Vandenbosch, C. Dekeukeleire, R. Degraeve, Marnix Tack, G. Groeseneken	2004	60
15	A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors IEEE International Reliability Physics Symposium proceedings ·P. Moens, Filip Bauwens, Pierre Joris, W. De Ceuninck, Marnix Tack +1 other	2007	59
16	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs IEEE International Reliability Physics Symposium proceedings ·Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, Benoit Bakeroot	2018	53
17	Adsorption of carbonate-derived molecules on the surface of carbonate-containing apatites Journal of the Chemical Society Faraday Transactions ·P. Moens, Freddy J. Callens, P. Matthys, F. Maes, Ronald M H Verbeeck, Didier E. Naessens	1991	51
18	A novel hot-hole injection degradation model for lateral nDMOS transistors Technical digest - International Electron Devices Meeting/Technical digest ·P. Moens, Marnix Tack, R. Degraeve, G. Groeseneken	2002	48
19	Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs ·Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, P. Moens, Benoit Bakeroot	2019	47
20	XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit Technical digest - International Electron Devices Meeting/Technical digest ·P. Moens, Filip Bauwens, Joris Baele, Konstantin V. Vershinin, E. De Backer, E.M. Sankara Narayanan, Marnix Tack	2006	45

About P. Moens

P. Moens is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Biophysics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 177 papers that have together received 3.8k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (97 papers), GaN-based semiconductor devices and materials (55 papers), Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers), Electrostatic Discharge in Electronics (18 papers), Electron Spin Resonance Studies (16 papers), Analog and Mixed-Signal Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Condensed Matter Physics (1.8k citations), Electrical and Electronic Engineering (1.7k citations), Electronic, Optical and Magnetic Materials (432 citations), Biophysics (137 citations) and Food Science (61 citations). P. Moens has collaborated with scholars based in Belgium, Italy and United States. Frequent co-authors include Gaudenzio Meneghesso, Matteo Meneghini, Marnix Tack, Abhishek Banerjee, Enrico Zanoni, Geert Van den Bosch, G. Groeseneken, Arno Stockman, Piet Vanmeerbeek and Michael J. Uren. Their work appears in journals such as Microelectronics Reliability, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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