S.T. Sheppard

3.8k citations

55 papers · 3.1k · 3 hit papers · h-index 18

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 51
- Silicon Carbide Semiconductor Technologies 32
- Radio Frequency Integrated Circuit Design 19
- Semiconductor materials and devices 17
- Advancements in Semiconductor Devices and Circuit Design 9
- Electromagnetic Compatibility and Noise Suppression 7
- Advanced Power Amplifier Design 3
Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 37

Co-authors: W.L. Pribble (13 shared papers)J. Milligan (11 shared papers)Simon M. Wood (6 shared papers)Raymond S. Pengelly (2 shared papers)R.P. Smith (11 shared papers)A. Saxler (6 shared papers)Yifeng Wu (5 shared papers)P. Parikh (4 shared papers)
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (4 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)Materials Science and Engineering B (2 papers)
Partner nations: United States China United Kingdom

In The Last Decade

S.T. Sheppard

52 papers receiving 2.9k citations

S.T. Sheppard's Hit Papers

align trajectories log scale

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs 2012 · 810 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2012 IEEE Transactions on Microwave Theory and Techniques
2004 IEEE Electron Device Letters
1999 IEEE Electron Device Letters

Peers

Countries citing papers authored by S.T. Sheppard

Since Specialization

Citations

This map shows the geographic impact of S.T. Sheppard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.T. Sheppard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.T. Sheppard more than expected).

Fields of papers citing papers by S.T. Sheppard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.T. Sheppard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.T. Sheppard. The network helps show where S.T. Sheppard may publish in the future.

Co-authors

The 25 scholars most cited alongside S.T. Sheppard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.T. Sheppard Line = papers co-authored together S.T. Sheppard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 55 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	30-W/mm GaN HEMTs by Field Plate Optimization IEEE Electron Device Letters ·Yifeng Wu, A. Saxler, M. Moore, R.P. Smith, S.T. Sheppard, P. Chavarkar, T. Wisleder, Umesh K. Mishra, P. Parikh Hit paper breakdown →	2004	908
2	A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs IEEE Transactions on Microwave Theory and Techniques ·Raymond S. Pengelly, Simon M. Wood, J. Milligan, S.T. Sheppard, W.L. Pribble Hit paper breakdown →	2012	810
3	High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates IEEE Electron Device Letters ·S.T. Sheppard, K. Doverspike, W.L. Pribble, Scott T. Allen, John W. Palmour, L. Kehias, T. Jenkins Hit paper breakdown →	1999	478
4	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, Hoyoul Kong, H. Dieringer, J. A. Edmond, J.D. Brown, J.T. Swindell, J. F. Schetzina	1997	115
5	Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC IEEE Transactions on Electron Devices ·S.T. Sheppard, M. R. Melloch, James A. Cooper	1994	76
6	Wide bandgap semiconductor devices and MMICs for RF power applications John W. Palmour, S.T. Sheppard, R.P. Smith, Scott T. Allen, W.L. Pribble, T.J. Smith, Z. Ring, Joseph J. Sumakeris, A. Saxler, J. Milligan	2002	65
7	Applications of SiC MESFETs and GaN HEMTs in power amplifier design W.L. Pribble, John W. Palmour, S.T. Sheppard, R.P. Smith, Scott T. Allen, T.J. Smith, Z. Ring, Joseph J. Sumakeris, A. Saxler, J. Milligan	2003	62
8	Gain characteristics of InGaN/GaN quantum well diode lasers Applied Physics Letters ·Y.-K. Song, Martin Kuball, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, M. Leonard, Hoyoul Kong, H. Dieringer, J. A. Edmond	1998	49
9	SiC and GaN Wide Bandgap Device Technology Overview J. Milligan, S.T. Sheppard, W.L. Pribble, Yilin Wu, G. Müller, John W. Palmour	2007	37
10	Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC Journal of Applied Physics ·S.T. Sheppard, James A. Cooper, M. R. Melloch	1994	31
11	Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide IEEE Electron Device Letters ·S.T. Sheppard, M. R. Melloch, James A. Cooper	1996	26
12	Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design IEEE Electron Device Letters ·Kyle M. Bothe, Satyaki Ganguly, Jia Guo, Yueying Liu, Alex Niyonzima, O. Tornblad, Jeremy Fisher, Don A. Gajewski, S.T. Sheppard, Basim Noori	2022	25
13	Increased thermal generation rate in GaAs due to electron-beam metallization Journal of Applied Physics ·T.B. Stellwag, M. R. Melloch, James A. Cooper, S.T. Sheppard, David D. Nolte	1992	24
14	The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal-oxide-semiconductor devices Applied Physics Letters ·W. Xie, J. N. Shenoy, S.T. Sheppard, M. R. Melloch, James A. Cooper	1996	24
15	An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz Yifeng Wu, Simon M. Wood, R.P. Smith, S.T. Sheppard, Scott T. Allen, P. Parikh, J. Milligan	2006	24
16	Recent Progress in SiC Microwave MESFETs MRS Proceedings ·Scott T. Allen, S.T. Sheppard, W.L. Pribble, R.A. Sadler, T.S. Alcorn, Z. Ring, John W. Palmour	1999	19
17	High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC IEEE Transactions on Electron Devices ·U. Schmid, S.T. Sheppard, W. Wondrak	2000	19
18	AlGaN/GaN-on-SiC HEMT Technology Status R.P. Smith, S.T. Sheppard, Yifeng Wu, S. Heikman, Simon M. Wood, W.L. Pribble, J. Milligan	2008	17
19	Experimental characterization of electron-hole generation in silicon carbide Journal of Electronic Materials ·Y. Wang, James A. Cooper, M. R. Melloch, S.T. Sheppard, John W. Palmour, Lori A. Lipkin	1996	16
20	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·K. Doverspike, G. E. Bulman, S.T. Sheppard, Hoyoul Kong, M. Leonard, H. Dieringer, T. W. Weeks, J. A. Edmond, J.D. Brown, J. T. Swindle, J. F. Schetzina, (unknown), Martin Kuball, A. V. Nurmikko	1997	15

About S.T. Sheppard

S.T. Sheppard is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 55 papers that have together received 3.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Silicon Carbide Semiconductor Technologies (32 papers), Radio Frequency Integrated Circuit Design (19 papers), Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Advanced Power Amplifier Design (3 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (782 citations), Electrical and Electronic Engineering (2.4k citations), Atomic and Molecular Physics, and Optics (796 citations) and Materials Chemistry (517 citations). S.T. Sheppard has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include W.L. Pribble, J. Milligan, Simon M. Wood, Raymond S. Pengelly, R.P. Smith, A. Saxler, Yifeng Wu, P. Parikh, P. Chavarkar and M. Moore. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.T. Sheppard

S.T. Sheppard's Hit Papers

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All Works

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