B. Luo

2.6k citations

93 papers · 2.2k · h-index 27

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 75
- Semiconductor materials and devices 55
- Silicon Carbide Semiconductor Technologies 15
- Advancements in Semiconductor Devices and Circuit Design 5
Condensed Matter Physics 72
- GaN-based semiconductor devices and materials 72

Co-authors: F. Ren (85 shared papers)S. J. Pearton (85 shared papers)C. R. Abernathy (42 shared papers)F. Ren (31 shared papers)J. W. Johnson (23 shared papers)R. Mehandru (25 shared papers)A. H. Onstine (24 shared papers)Albert G. Baca (9 shared papers)
Journals: Solid-State Electronics (32 papers)Applied Physics Letters (16 papers)Journal of The Electrochemical Society (9 papers)Electrochemical and Solid-State Letters (8 papers)Journal of Applied Physics (4 papers)
Partner nations: United States Taiwan Japan

In The Last Decade

B. Luo

90 papers receiving 2.1k citations

Peers

Countries citing papers authored by B. Luo

Since Specialization

Citations

This map shows the geographic impact of B. Luo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Luo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Luo more than expected).

Fields of papers citing papers by B. Luo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Luo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Luo. The network helps show where B. Luo may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Luo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Luo Line = papers co-authored together B. Luo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 93 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO Applied Physics Letters ·K. Ip, M. E. Overberg, Young-Woo Heo, D. P. Norton, S. J. Pearton, C. E. Stutz, B. Luo, F. Ren, D. C. Look, J. M. Zavada	2003	184
2	Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·B. Luo, J. W. Johnson, Jong Su KIM, R. Mehandru, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Albert G. Baca, R. D. Briggs, R. J. Shul, C. Monier, Jung Han	2002	156
3	AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters ·R. Mehandru, B. Luo, J. Kim, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo	2003	115
4	dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, Albert G. Baca	2001	102
5	Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor Applied Physics Letters ·J. W. Johnson, B. Luo, F. Ren, F. Ren, Wish Krishnamoorthy, C. R. Abernathy, S. J. Pearton, J.-I. Chyi, Tzer‐En Nee, C. M. Lee, Chang‐Cheng Chuo	2000	83
6	Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes Applied Physics Letters ·Jihyun Kim, R. Mehandru, B. Luo, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Yoshihiro Irokawa	2002	82
7	Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, D. Schoenfeld, Albert G. Baca	2002	76
8	Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs physica status solidi (a) ·F. Ren, J. W. Johnson, R. Mehandru, B. Luo, A. H. Onstine, V. Krishnamoorthy, S. R. Bates, C. R. Abernathy, F. Ren, S. J. Pearton	2001	75
9	Vertical and lateral GaN rectifiers on free-standing GaN substrates Applied Physics Letters ·A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, Jen‐Inn Chyi	2001	61
10	Inversion behavior in Sc2O3/GaN gated diodes Applied Physics Letters ·Jihyun Kim, R. Mehandru, B. Luo, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Yoshihiro Irokawa	2002	61
11	AlGaN/GaN HEMT based liquid sensors Solid-State Electronics ·R. Mehandru, B. Luo, B. S. Kang, Jihyun Kim, F. Ren, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi	2003	56
12	Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Journal of The Electrochemical Society ·J. Kim, F. Ren, R. Mehandru, J. W. Johnson, Jaeho Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren	2002	55
13	Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, K. Ip, M. E. Overberg, Young-Woo Heo, D. P. Norton, S. J. Pearton, B. Luo, F. Ren, J. M. Zavada	2003	53
14	AlGaN/GaN $Ka$-Band 5-W MMIC Amplifier IEEE Transactions on Microwave Theory and Techniques ·Ali M. Darwish, K. S. Boutros, B. Luo, Benjamin D. Huebschman, Edward Viveiros, H. Alfred Hung	2006	49
15	High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors Journal of Electronic Materials ·B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, Albert G. Baca	2002	48
16	Hydrogen incorporation, diffusivity and evolution in bulk ZnO Solid-State Electronics ·K. Ip, M. E. Overberg, Young-Woo Heo, D. P. Norton, S. J. Pearton, C. E. Stutz, S. O. Kucheyev, C. Jagadish, J. S. Williams, B. Luo, F. Ren, D. C. Look, J. M. Zavada	2003	42
17	Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs IEEE Electron Device Letters ·J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton	2002	40
18	Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Osinsky, P. Norris	2002	36
19	Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of The Electrochemical Society ·B. Luo, R. Mehandru, J. Kim, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2002	36
20	Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization Applied Physics Letters ·B. Luo, F. Ren, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Albert G. Baca, R. D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, S. J. Pearton	2003	35

About B. Luo

B. Luo is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 93 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (72 papers), Semiconductor materials and devices (55 papers), Ga2O3 and related materials (49 papers), Silicon Carbide Semiconductor Technologies (15 papers), ZnO doping and properties (14 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor materials and interfaces (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Electrical and Electronic Engineering (1.6k citations), Materials Chemistry (810 citations) and Atomic and Molecular Physics, and Optics (281 citations). B. Luo has collaborated with scholars based in United States, Taiwan and Japan. Frequent co-authors include F. Ren, S. J. Pearton, C. R. Abernathy, F. Ren, J. W. Johnson, R. Mehandru, A. H. Onstine, Albert G. Baca, J. M. Zavada and M. E. Overberg. Their work appears in journals such as Solid-State Electronics, Applied Physics Letters, Journal of The Electrochemical Society, Electrochemical and Solid-State Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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