F. Ren

1.4k papers receiving 39.5k citations

F. Ren's Hit Papers

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS 2018 · 532 citations
5320+9+18Years since publication50010001.5k2.0k

Peers

F. Ren
Comparison fields: 5 of 153
  • Condensed Matter Physics 14.8k
  • Electronic, Optical and Magnetic Materials 17.3k
  • Materials Chemistry 21.9k
  • Bioengineering 2.5k
  • Electrical and Electronic Engineering 23.2k
Replace S. J. Pearton with:
S. J. Pearton United States
M. Stutzmann Germany
Lars Hultman Sweden
Alexander A. Balandin United States
Dmitri Golberg Japan
Li–Chyong Chen Taiwan
Judith L. MacManus‐Driscoll United Kingdom
Junqiao Wu United States
Dapeng Yu China
U. Gösele Germany
F. Ren relative to S. J. Pearton United States S. J. Pearton's profile →
Citations per field
00.5×1.5×
S. J. Pearton · 1×
Citations per year

Countries citing papers authored by F. Ren

Since Specialization
Citations

This map shows the geographic impact of F. Ren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Ren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Ren more than expected).

Fields of papers citing papers by F. Ren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Ren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Ren. The network helps show where F. Ren may publish in the future.

Co-authors

The 25 scholars most cited alongside F. Ren, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Ren Line = papers co-authored together F. Ren links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 1.5k papers — load more, or switch the sort, to bring in the rest.

#Work
1
A review of Ga2O3 materials, processing, and devices
Hit paper breakdown →
20182441
2
GaN: Processing, defects, and devices
Hit paper breakdown →
19991565
3
Wide band gap ferromagnetic semiconductors and oxides
Hit paper breakdown →
2002921
4
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
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2018532
5
ZnO nanowire growth and devices
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2004508
6
Hydrogen-selective sensing at room temperature with ZnO nanorods
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2005499
7 2000417
8 2017416
9 2002344
10 2002293
11 2015289
12 2004264
13 2005257
14 2009242
15 2018234
16 2004213
17 2013203
18 2017200
19 1998197
20 2012193

About F. Ren

F. Ren is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 1.5k papers that have together received 40.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (676 papers), Semiconductor materials and devices (629 papers), Ga2O3 and related materials (500 papers), ZnO doping and properties (447 papers), Semiconductor Quantum Structures and Devices (180 papers), Gas Sensing Nanomaterials and Sensors (166 papers), Silicon Carbide Semiconductor Technologies (140 papers) and Semiconductor materials and interfaces (116 papers). The work is most often cited by research in Condensed Matter Physics (14.8k citations), Electronic, Optical and Magnetic Materials (17.3k citations), Materials Chemistry (21.9k citations), Bioengineering (2.5k citations) and Electrical and Electronic Engineering (23.2k citations). F. Ren has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include S. J. Pearton, Jihyun Kim, D. P. Norton, C. R. Abernathy, Jiancheng Yang, B. S. Kang, Marko J. Tadjer, R. J. Shul, Michael A. Mastro and J.C. Zolper. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, ECS Journal of Solid State Science and Technology and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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