C. J. Eiting

1.8k citations

50 papers · 1.5k · h-index 21

Impact in

Nuclear Energy and Engineering top 0.5%
- Advanced Energy Technologies and Civil Engineering Innovations
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 48
Electronic, Optical and Magnetic Materials 34
- Ga2O3 and related materials 34

Co-authors: Russell D. Dupuis (46 shared papers)Piotr Grudowski (24 shared papers)John C. Carrano (13 shared papers)Joe C. Campbell (11 shared papers)Damien Lambert (17 shared papers)T. Li (5 shared papers)Z. Liliental‐Weber (12 shared papers)B. S. Shelton (10 shared papers)
Journals: Applied Physics Letters (14 papers)Journal of Crystal Growth (5 papers)Journal of Electronic Materials (5 papers)Electronics Letters (5 papers)MRS Internet Journal of Nitride Semiconductor Research (4 papers)
Partner nations: United States Poland Japan

In The Last Decade

C. J. Eiting

48 papers receiving 1.4k citations

Peers

Countries citing papers authored by C. J. Eiting

Since Specialization

Citations

This map shows the geographic impact of C. J. Eiting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Eiting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Eiting more than expected).

Fields of papers citing papers by C. J. Eiting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Eiting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Eiting. The network helps show where C. J. Eiting may publish in the future.

Co-authors

The 25 scholars most cited alongside C. J. Eiting, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. J. Eiting Line = papers co-authored together C. J. Eiting links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 50 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	GaN avalanche photodiodes Applied Physics Letters ·John C. Carrano, Damien Lambert, C. J. Eiting, C.J. Collins, T. Li, S. Wang, Bo Yang, A.L. Beck, Russell D. Dupuis, Joe C. Campbell	2000	208
2	Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN Journal of Applied Physics ·John C. Carrano, T. Li, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1998	188
3	Demonstration of a radiation resistant, high efficiency SiC betavoltaic Applied Physics Letters ·C. J. Eiting, V. Krishnamoorthy, S. Rodgers, T. V. George, J. David Robertson, John Brockman	2006	121
4	Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Applied Physics Letters ·John C. Carrano, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1997	91
5	Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition Applied Physics Letters ·Z. Liliental‐Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, Damien Lambert, C. J. Eiting, Russell D. Dupuis	1999	77
6	Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors Applied Physics Letters ·John C. Carrano, T. Li, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1998	76
7	Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN Applied Physics Letters ·John C. Carrano, T. Li, Daniel L. Brown, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1998	62
8	Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition Applied Physics Letters ·J. Park, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis	1998	61
9	The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters ·Piotr Grudowski, A.L. Holmes, C. J. Eiting, Russell D. Dupuis	1996	36
10	AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour deposition Electronics Letters ·B. S. Shelton, Jian‐Jang Huang, Damien Lambert, Ting Zhu, M.M. Wong, C. J. Eiting, Ho Ki Kwon, Ming Feng, Russell D. Dupuis	2000	33
11	Ordering in bulk GaN:Mg samples: defects caused by Mg doping Physica B Condensed Matter ·Z. Liliental‐Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, Russell D. Dupuis, C. J. Eiting	1999	33
12	Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure Applied Physics Letters ·Ho Ki Kwon, C. J. Eiting, Damien Lambert, B. S. Shelton, M.M. Wong, Ting Zhu, Russell D. Dupuis	1999	31
13	Activation studies of low-dose Si implants in gallium nitride Applied Physics Letters ·C. J. Eiting, Piotr Grudowski, Russell D. Dupuis, H. Hsia, Zhikai Tang, D. Becher, Hao‐Chung Kuo, G. E. Stillman, Ming Feng	1998	31
14	Very high-speed ultraviolet photodetectors fabricated on GaN Journal of Electronic Materials ·John C. Carrano, T. Li, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1999	29
15	Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice Applied Physics Letters ·Leah Bergman, Mitra Dutta, Michael A. Stroscio, S. M. Komirenko, R. J. Nemanich, C. J. Eiting, Damien Lambert, Ho Ki Kwon, Russell D. Dupuis	2000	29
16	High quantum efficiency metal-semiconductor-metalultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Electronics Letters ·John C. Carrano, T. Li, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1997	28
17	Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters ·Piotr Grudowski, C. J. Eiting, Jusun Park, B. S. Shelton, Damien Lambert, Russell D. Dupuis	1997	28
18	High-speed pin ultraviolet photodetectorsfabricated on GaN Electronics Letters ·John C. Carrano, T. Li, Daniel L. Brown, Piotr Grudowski, C. J. Eiting, Russell D. Dupuis, Joe C. Campbell	1998	25
19	Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Kenji Shiojima, J. M. Woodall, C. J. Eiting, Paul A. Grudowski, Russell D. Dupuis	1999	24
20	Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour deposition Electronics Letters ·John C. Carrano, T. Li, Piotr Grudowski, C. J. Eiting, Damien Lambert, J.D. Schaub, Russell D. Dupuis, Joe C. Campbell	1998	24

About C. J. Eiting

C. J. Eiting is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering, having authored 50 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (34 papers), ZnO doping and properties (15 papers), Semiconductor materials and devices (12 papers), Metal and Thin Film Mechanics (9 papers), Photocathodes and Microchannel Plates (9 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Nuclear Energy and Engineering (111 citations), Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (679 citations), Instrumentation (49 citations) and Atomic and Molecular Physics, and Optics (419 citations). C. J. Eiting has collaborated with scholars based in United States, Poland and Japan. Frequent co-authors include Russell D. Dupuis, Piotr Grudowski, John C. Carrano, Joe C. Campbell, Damien Lambert, T. Li, Z. Liliental‐Weber, B. S. Shelton, S. Wang and Mourad Benamara. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Electronics Letters and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

C. J. Eiting

Impact in

Papers in i

In The Last Decade

C. J. Eiting

Peers

Countries citing papers authored by C. J. Eiting

Fields of papers citing papers by C. J. Eiting

All Works

About C. J. Eiting

Explore authors with similar magnitude of impact

Papers in