Q. Chen

3.1k citations

37 papers · 2.7k · h-index 23

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials 14
- Ga2O3 and related materials 14

Co-authors: Md Asif Khan (22 shared papers)Michael S. Shur (14 shared papers)Jinhong Yang (6 shared papers)Jinwei Yang (11 shared papers)A. T. Ping (6 shared papers)I. Adesida (6 shared papers)William J Schaff (4 shared papers)Andrei V. Osinsky (5 shared papers)
Journals: Applied Physics Letters (15 papers)Electronics Letters (5 papers)IEEE Electron Device Letters (4 papers)Journal of Electronic Materials (3 papers)Materials Science and Engineering B (2 papers)
Partner nations: United States France South Korea

In The Last Decade

Q. Chen

35 papers receiving 2.7k citations

Peers

Countries citing papers authored by Q. Chen

Since Specialization

Citations

This map shows the geographic impact of Q. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Q. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Q. Chen more than expected).

Fields of papers citing papers by Q. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Q. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Q. Chen. The network helps show where Q. Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside Q. Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Q. Chen Line = papers co-authored together Q. Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Schottky barrier detectors on GaN for visible–blind ultraviolet detection Applied Physics Letters ·Q. Chen, Jinhong Yang, Andrei V. Osinsky, S. Gangopadhyay, Beomdu Lim, M. Zubair Anwar, Md Asif Khan, Dmitri V. Kuksenkov	1997	276
2	Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C Applied Physics Letters ·Md Asif Khan, Michael S. Shur, John N. Kuznia, Q. Chen, Jin Burm, William J Schaff	1995	249
3	High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN Applied Physics Letters ·Lei Wang, M. I. Nathan, T-H. Lim, M.A. Khan, Q. Chen	1996	232
4	High-temperature performance of AlGaN/GaN HFETs on SiC substrates IEEE Electron Device Letters ·Remis Gaska, Q. Chen, Jinwei Yang, Andrei V. Osinsky, Md Asif Khan, Michael S. Shur	1997	186
5	Metal contacts to n-type GaN Journal of Electronic Materials ·A. C. Schmitz, A. T. Ping, Md Asif Khan, Q. Chen, Jinhong Yang, I. Adesida	1998	164
6	Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors Applied Physics Letters ·Md Asif Khan, Q. Chen, C. J. Sun, J. Yang, M. Blasingame, Michael S. Shur, H. Park	1996	159
7	The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN Journal of Electronic Materials ·A. T. Ping, Q. Chen, Jinhong Yang, Md Asif Khan, I. Adesida	1998	109
8	Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure Journal of Applied Physics ·J. Z. Li, J.Y. Lin, H. X. Jiang, Md Asif Khan, Q. Chen	1997	109
9	DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates IEEE Electron Device Letters ·A. T. Ping, Q. Chen, Jinwei Yang, M.A. Khan, I. Adesida	1998	107
10	Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency Electronics Letters ·M. Asif Khan, Q. Chen, Michael S. Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, William J Schaff, LESTER F. EASTMAN	1996	105
11	CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz IEEE Electron Device Letters ·M. Asif Khan, Q. Chen, Michael S. Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, William J Schaff, LESTER F. EASTMAN	1996	103
12	High transconductance heterostructure field-effect transistors based on AlGaN/GaN Applied Physics Letters ·Q. Chen, Md Asif Khan, Jinwei Yang, C. J. Sun, Michael S. Shur, Hyogeun Park	1996	100
13	High-power 10-GHz operation of AlGaN HFET's on insulating SiC IEEE Electron Device Letters ·G.J. Sullivan, M.Y. Chen, J.A. Higgins, J. Yang, Q. Chen, R.L. Pierson, B. T. McDermott	1998	99
14	Time-resolved photoluminescence studies of InGaN epilayers Applied Physics Letters ·Mark Power Smith, G. D. Chen, J.Y. Lin, H. X. Jiang, Md Asif Khan, Q. Chen	1996	91
15	Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes Journal of Electronic Materials ·A. T. Ping, A. C. Schmitz, I. Adesida, Md Asif Khan, Q. Chen, Jinhong Yang	1997	81
16	Gated photodetector based on GaN/AlGaN heterostructurefieldeffect transistor Electronics Letters ·Md Asif Khan, Michael S. Shur, Q. Chen, J. N. Kuznia, Chi Sun	1995	79
17	Hall measurements and contact resistance in doped GaN/AlGaN heterostructures Applied Physics Letters ·Md Asif Khan, Michael S. Shur, Q. Chen	1996	78
18	Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition Applied Physics Letters ·Md Asif Khan, Q. Chen, C. J. Sun, Michael S. Shur, BORIS L. GELMONT	1995	75
19	Study of contact formation in AlGaN/GaN heterostructures Applied Physics Letters ·Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau, Q. Chen, Jinwei Yang, M. Asif Khan	1997	58
20	Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells Applied Physics Letters ·Mark Power Smith, J.Y. Lin, H. X. Jiang, Ali Hossain Khan, Q. Chen, A. Salvador, Andrei E. Botchkarev, Wonsuck Kim	1997	51

About Q. Chen

Q. Chen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 37 papers that have together received 2.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (17 papers), Ga2O3 and related materials (14 papers), Silicon Carbide Semiconductor Technologies (7 papers), Semiconductor Quantum Structures and Devices (7 papers), Metal and Thin Film Mechanics (6 papers), Photocathodes and Microchannel Plates (5 papers) and Acoustic Wave Resonator Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (1.2k citations), Atomic and Molecular Physics, and Optics (896 citations), Electrical and Electronic Engineering (1.5k citations) and Materials Chemistry (711 citations). Q. Chen has collaborated with scholars based in United States, France and South Korea. Frequent co-authors include Md Asif Khan, Michael S. Shur, Jinhong Yang, Jinwei Yang, A. T. Ping, I. Adesida, William J Schaff, Andrei V. Osinsky, C. J. Sun and M.A. Khan. Their work appears in journals such as Applied Physics Letters, Electronics Letters, IEEE Electron Device Letters, Journal of Electronic Materials and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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