X. Li

460 citations

35 papers · 356 · h-index 12

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Electrical and Electronic Engineering 16
- Semiconductor materials and devices 15

Co-authors: H. Morkoç̌ (26 shared papers)X. Ni (14 shared papers)V. Avrutin (19 shared papers)Ü. Özgür (14 shared papers)Jacob H. Leach (10 shared papers)Ümit Özgür (13 shared papers)M. Wu (8 shared papers)K. R. Evans (8 shared papers)
Journals: Applied Physics Letters (4 papers)physica status solidi (a) (3 papers)IEEE Electron Device Letters (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Journal of Applied Physics (2 papers)
Partner nations: United States China Lithuania

In The Last Decade

X. Li

31 papers receiving 341 citations

Peers

Countries citing papers authored by X. Li

Since Specialization

Citations

This map shows the geographic impact of X. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Li more than expected).

Fields of papers citing papers by X. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Li. The network helps show where X. Li may publish in the future.

Co-authors

The 25 scholars most cited alongside X. Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with X. Li Line = papers co-authored together X. Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 35 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat, (unknown), James W. Pomeroy, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, Mauricio Kossler, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	48
2	Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Çağlıyan Kurdak	2009	31
3	Impact of active layer design on InGaN radiative recombination coefficient and LED performance Journal of Applied Physics ·X. Li, Serdal Okur, Fan Zhang, V. Avrutin, Ü. Özgür, H. Morkoç̌, S. M. Hong, S. H. Yen, T. C. Hsu, A. Matulionis	2012	30
4	Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Superlattices and Microstructures ·X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ümit Özgür, H. Morkoç̌	2010	29
5	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, Mauricio Kossler, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	22
6	Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ümit Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, Edward A. Preble, K. R. Evans	2010	21
7	The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes physica status solidi (RRL) - Rapid Research Letters ·X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç̌, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans	2010	18
8	Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures physica status solidi (a) ·Jacob H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç̌	2009	18
9	InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide physica status solidi (a) ·X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ümit Özgür, H. Morkoç̌	2010	18
10	Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics ·Jacob H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç̌, Lin Zhou, David A. Cullen, David J. Smith, H. Cheng, Çağlıyan Kurdak, J. R. Meyer, I. Vurgaftman	2010	15
11	Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects Applied Physics Letters ·Congyong Zhu, M. Wu, Cemil Kayis, Fan Zhang, X. Li, Romualdo A. Ferreyra, A. Matulionis, V. Avrutin, Ümit Özgür, H. Morkoç̌	2012	12
12	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Janina Moereke, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, Mauricio Kossler, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
13	Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. D. McNamara, M. Foussekis, A. A. Baski, X. Li, V. Avrutin, H. Morkoç̌, Jacob H. Leach, T. Paskova, Kevin Udwary, Edward A. Preble, M. A. Reshchikov	2012	11
14	On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer physica status solidi (a) ·X. Li, Fan Zhang, Serdal Okur, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç̌, S. M. Hong, S. H. Yen, Ta-Cheng Hsu, A. Matulionis	2011	11
15	InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p‐GaN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Y. Liu, X. Li, S. Liu, X. Ni, Meng‐Chyi Wu, V. Avrutin, N. Izyumskaya, Ümit Özgür, Andrew B. Yankovich, A. Kvit, Paul M. Voyles, H. Morkoç̌	2011	11
16	Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T. Malinauskas, A. Kadys, Tomas Grinys, Saulius Nargelas, Ramnas Aleksiejnas, S. Miasojedovas, J. Mickeviius, R. Tomašinas, Kstutis Jarašinas, Mikas Vengris, Serdal Okur, V. Avrutin, X. Li, Fan Zhang, Ü. Özgür, H. Morkoç	2012	8
17	On the reduction of efficiency loss in polar c ‐plane and non‐polar m ‐plane InGaN light emitting diodes Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·X. Li, X. Ni, H. Y. Liu, Fan Zhang, S. Liu, J. Lee, V. Avrutin, Ü. Özgür, T. Paskova, G. Mulholland, K. R. Evans, H. Morkoç̌	2011	7
18	Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Cemil Kayis, Jacob H. Leach, Congyong Zhu, Mo Wu, X. Li, Ü. Özgür, H. Morkoç̌, Xiangyu Yang, Veena Misra, Peter Händel	2011	5
19	Reduction of efficiency droop in InGaN-based blue LEDs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·X. Ni, X. Li, Jun Xie, Q. Fan, Rintaro Shimada, Ü. Özgür, H. Morkoç̌	2009	5
20	Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Lulu Guan, X. Li, Chun‐Xiang Guo, Xinying Shi, Kaidong Xu, Shiwei Zhuang	2023	4

About X. Li

X. Li is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 35 papers that have together received 356 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Semiconductor materials and devices (15 papers), Ga2O3 and related materials (12 papers), ZnO doping and properties (10 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor Quantum Structures and Devices (8 papers), Photocathodes and Microchannel Plates (3 papers) and Nanowire Synthesis and Applications (2 papers). The work is most often cited by research in Condensed Matter Physics (319 citations), Electronic, Optical and Magnetic Materials (116 citations), Atomic and Molecular Physics, and Optics (122 citations), Electrical and Electronic Engineering (175 citations) and Materials Chemistry (127 citations). X. Li has collaborated with scholars based in United States, China and Lithuania. Frequent co-authors include H. Morkoç̌, X. Ni, V. Avrutin, Ü. Özgür, Jacob H. Leach, Ümit Özgür, M. Wu, K. R. Evans, Fan Zhang and A. Matulionis. Their work appears in journals such as Applied Physics Letters, physica status solidi (a), IEEE Electron Device Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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