J. Sewell

742 citations

45 papers · 606 · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 39
- Semiconductor materials and devices 15
- Radio Frequency Integrated Circuit Design 14
- Advancements in Semiconductor Devices and Circuit Design 7
- Semiconductor Lasers and Optical Devices 6
- Silicon Carbide Semiconductor Technologies 5
Condensed Matter Physics 19
- GaN-based semiconductor devices and materials 19

Co-authors: T. Jenkins (33 shared papers)J. Gillespie (27 shared papers)Robert Fitch (19 shared papers)S. J. Pearton (13 shared papers)F. Ren (13 shared papers)B. Luo (11 shared papers)R. Dettmer (24 shared papers)A. H. Onstine (9 shared papers)
Journals: Solid-State Electronics (9 papers)Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)Journal of The Electrochemical Society (2 papers)Journal of Applied Physics (2 papers)
Partner nations: United States Germany Japan

In The Last Decade

J. Sewell

40 papers receiving 582 citations

Peers

Countries citing papers authored by J. Sewell

Since Specialization

Citations

This map shows the geographic impact of J. Sewell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Sewell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Sewell more than expected).

Fields of papers citing papers by J. Sewell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Sewell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Sewell. The network helps show where J. Sewell may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Sewell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Sewell Line = papers co-authored together J. Sewell links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 45 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters ·R. Mehandru, B. Luo, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo	2003	116
2	Wet Chemical Digital Etching of GaAs at Room Temperature Journal of The Electrochemical Society ·G. DeSalvo, C. Bozada, J. Ebel, D. C. Look, J. Barrette, Charles Cerny, R. Dettmer, J. Gillespie, C. Havasy, (unknown), K. Nakano, C. Pettiford, T. Quach, J. Sewell, G. D. Via	1996	67
3	Transient characteristics of gan-based heterostructure field-effect transistors IEEE Transactions on Microwave Theory and Techniques ·E. Kohn, I. Daumiller, M. Kunze, Martin Neuburger, M. Seyboth, T. Jenkins, J. Sewell, J. Van Norstand, Y. Smorchkova, Umesh K. Mishra	2003	58
4	Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs IEEE Electron Device Letters ·J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton	2002	40
5	Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of The Electrochemical Society ·B. Luo, R. Mehandru, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2002	38
6	Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization Applied Physics Letters ·B. Luo, F. Ren, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Albert G. Baca, R. D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, S. J. Pearton	2003	35
7	Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. Luo, Jihyun Kim, F. Ren, J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, Antonio Crespo, T. Jenkins, (unknown), A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins	2003	33
8	Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors Solid-State Electronics ·B. Luo, F. Ren, K. K. Allums, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, Robert Fitch, J. Gillespie, T. Jenkins, R. Dettmer, J. Sewell, G. D. Via, Antonio Crespo, Albert G. Baca, R. J. Shul	2003	28
9	Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors Applied Physics Letters ·Robert Fitch, J. Gillespie, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, J. R. La Roche, F. Ren, S. J. Pearton	2004	22
10	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Neil Moser, Mark Yannuzzi, Antonio Crespo, J. Sewell, R. Dettmer, T. Jenkins, R. F. Davis, Jinwei Yang, M.A. Khan, S.C. Binari	2003	15
11	Switching behaviour of GaN-based HFETs: thermal and electronic transients Electronics Letters ·E. Kohn, I. Daumiller, M. Kunze, Joseph Van Nostrand, J. Sewell, T. Jenkins	2002	15
12	Thermal management of microwave power heterojunction bipolar transistors Solid-State Electronics ·C. Bozada, Charles Cerny, Giuseppe Salvo, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy, T. Jenkins, C. Ito, K. Nakano, C. Pettiford, T. Quach, J. Sewell, G. D. Via, R. Anholt	1997	10
13	The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Solid-State Electronics ·B. Luo, R. Mehandru, Jihyun Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, R Dellmer, T. Jenkins, J. Sewell, D. Via, Antonio Crespo	2002	10
14	Dense heterogeneous integration for InP Bi-CMOS technology Y. Royter, Pamela Patterson, J.C. Li, K. Elliott, T. Hussain, Margaret F. Boag-O'Brien, J. Duvall, M.C. Montes, Donald A. Hitko, J. Sewell, M. Sokolich, D. H. Chow, P. D. Brewer	2009	10
15	Wafer-level correlations of EL2, dislocation density, and FET saturation current at various processing stages Journal of Electronic Materials ·D. C. Look, D. C. Walters, R.T. Kemerley, Jonathan M. King, M. G. Mier, J. Sewell, J. S. Sizelove	1989	8
16	Small signal measurement of Sc2O3 AlGaN/GaN moshemts Solid-State Electronics ·B. Luo, R. Mehandru, B. S. Kang, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo	2003	8
17	Uniformity of 3-in., semi-insulating, vertical-gradient-freeze GaAs wafers Journal of Applied Physics ·D. C. Look, D. C. Walters, M. G. Mier, J. Sewell, J. S. Sizelove, A. Akselrad, J. E. Clemans	1989	7
18	Thermal characterization of thermally-shunted heterojunction bipolar transistors IEEE Electron Device Letters ·J. Sewell, L.L. Liou, Douglas W. Barlage, J. Barrette, C. Bozada, R. Dettmer, Robert Fitch, T. Jenkins, R. Lee, M. Mack, G.J. Trombley, Paul Watson	1996	7
19	Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Solid-State Electronics ·Gregg H. Jessen, B. D. White, S. Bradley, P. E. Smith, L. J. Brillson, J. E. Van Nostrand, Robert Fitch, G. D. Via, J. Gillespie, R. Dettmer, J. Sewell	2002	7
20	Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's IEEE Transactions on Electron Devices ·J.J. Liou, T. Jenkins, L.L. Liou, R. Neidhard, Douglas W. Barlage, Robert Fitch, J. Barrette, M. Mack, C. Bozada, R.H.Y. Lee, R. Dettmer, J. Sewell	1996	7

About J. Sewell

J. Sewell is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Aerospace Engineering, having authored 45 papers that have together received 606 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (15 papers), Radio Frequency Integrated Circuit Design (14 papers), Ga2O3 and related materials (11 papers), Semiconductor Quantum Structures and Devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Semiconductor Lasers and Optical Devices (6 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (406 citations), Electronic, Optical and Magnetic Materials (202 citations), Electrical and Electronic Engineering (506 citations), Atomic and Molecular Physics, and Optics (135 citations) and Structural Biology (4 citations). J. Sewell has collaborated with scholars based in United States, Germany and Japan. Frequent co-authors include T. Jenkins, J. Gillespie, Robert Fitch, S. J. Pearton, F. Ren, B. Luo, R. Dettmer, A. H. Onstine, D. Via and C. R. Abernathy. Their work appears in journals such as Solid-State Electronics, Applied Physics Letters, IEEE Electron Device Letters, Journal of The Electrochemical Society and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

J. Sewell

Impact in

Papers in i

In The Last Decade

J. Sewell

Peers

Countries citing papers authored by J. Sewell

Fields of papers citing papers by J. Sewell

All Works

About J. Sewell

Explore authors with similar magnitude of impact

Papers in