Shih‐Hung Chen

696 citations
90 papers · 524 · h-index 13

Impact in

  • Hardware and Architecture top 10%
  • Electrical and Electronic Engineering top 10%
    • Electrostatic Discharge in Electronics
    • Semiconductor materials and devices
    • Integrated Circuits and Semiconductor Failure Analysis
    • Advancements in Semiconductor Devices and Circuit Design
    • Electromagnetic Compatibility and Noise Suppression
    • 3D IC and TSV technologies
    • Thin-Film Transistor Technologies

Papers in

  • Electrical and Electronic Engineering 83
    • Electrostatic Discharge in Electronics 55
    • Semiconductor materials and devices 47
    • Integrated Circuits and Semiconductor Failure Analysis 34
    • Advancements in Semiconductor Devices and Circuit Design 22
    • Electromagnetic Compatibility and Noise Suppression 13
    • 3D IC and TSV technologies 12
    • Thin-Film Transistor Technologies 7
    • Advanced Photonic Communication Systems 6
  • Computer Networks and Communications 6
Co-authors
Ming‐Dou Ker (11 shared papers)Dimitri Linten (41 shared papers)G. Groeseneken (35 shared papers)Geert Hellings (36 shared papers)Ming-Dou Ker (4 shared papers)Mirko Scholz (25 shared papers)S. Thijs (10 shared papers)Yen-Hao Shih (5 shared papers)
Journals
IEEE Transactions on Electron Devices (7 papers)IEEE Transactions on Device and Materials Reliability (5 papers)IEEE Electron Device Letters (3 papers)IEEE Photonics Technology Letters (2 papers)Microelectronics Reliability (2 papers)
Partner nations
BelgiumTaiwanUnited States

In The Last Decade

Shih‐Hung Chen

84 papers receiving 503 citations

Peers

Shih‐Hung Chen
Comparison fields: 5 of 29
  • Hardware and Architecture 58
  • Electrical and Electronic Engineering 467
  • Computer Networks and Communications 81
  • Computational Theory and Mathematics 28
  • Condensed Matter Physics 19
Replace Shiro Kamohara with:
Shiro Kamohara Japan
Neal K. Bambha United States
Shounak Dhar United States
Mohit Gupta Belgium
Raffaele De Rose Italy
Andrei Vladimirescu France
R.A. Hadaway Canada
Eric Chang United States
J.-H. Chern United States
S. Cserveny Switzerland
Shih‐Hung Chen relative to Shiro Kamohara Japan Shiro Kamohara's profile →
Citations per field
00.5×2×3×3.8×
Shiro Kamohara · 1×
Citations per year

Countries citing papers authored by Shih‐Hung Chen

Since Specialization
Citations

This map shows the geographic impact of Shih‐Hung Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shih‐Hung Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shih‐Hung Chen more than expected).

Fields of papers citing papers by Shih‐Hung Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shih‐Hung Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shih‐Hung Chen. The network helps show where Shih‐Hung Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside Shih‐Hung Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Shih‐Hung Chen Line = papers co-authored together Shih‐Hung Chen links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts
Shih‐Hung Chen, Hang-Ting Lue, Yen-Hao Shih, Chieh-Fang Chen, Tzu‐Hsuan Hsu, Yanru Chen, Yi‐Hsuan Hsiao, Shih-Cheng Huang, Kuo-Pin Chang, Chih-Chang Hsieh, Guan-Ru Lee, Alfred-Tung-Hua Chuang, Chih‐Wei Hu, Chia-Jung Chiu, Lo Yueh Lin, Hong-Ji Lee, Feng-Nien Tsai, Chin-Cheng Yang, Tahone Yang, Chih-Yuan Lu
201232
2
Overview of 3D NAND Flash and progress of vertical gate (VG) architecture
Hang-Ting Lue, Shih‐Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, Chih‐Yuan Lu
201226
3
Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs
IEEE Transactions on Circuits & Systems II Express Briefs ·Shih‐Hung Chen, Ming-Dou Ker
200925
4
Implementation of Initial-On ESD Protection Concept With PMOS-Triggered SCR Devices in Deep-Submicron CMOS Technology
IEEE Journal of Solid-State Circuits ·Ming‐Dou Ker, Shih‐Hung Chen
200725
5
A highly scalable vertical gate (VG) 3D NAND Flash with robust program disturb immunity using a novel PN diode decoding structure
Chun-Hsiung Hung, Hang-Ting Lue, Kuo-Pin Chang, Chih‐Ping Chen, Yi‐Hsuan Hsiao, Shih‐Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, Mars Yang, James Lee, Szu-Yu Wang, Tahone Yang, Kuang‐Chao Chen, Chih‐Yuan Lu
201123
6
Active ESD Protection Design for Interface Circuits Between Separated Power Domains Against Cross-Power-Domain ESD Stresses
IEEE Transactions on Device and Materials Reliability ·Shih‐Hung Chen, Ming-Dou Ker, Hsiang-Pin Hung
200823
7
A highly pitch scalable 3D vertical gate (VG) NAND flash decoded by a novel self-aligned independently controlled double gate (IDG) string select transistor (SSL)
Chih‐Ping Chen, Hang-Ting Lue, Kuo-Pin Chang, Yi‐Hsuan Hsiao, Chih-Chang Hsieh, Shih‐Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, Tahone Yang, Kuang‐Chao Chen, Chih-Yuan Lu
201221
8
Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection
IEEE Transactions on Electron Devices ·Shih‐Hung Chen, Ming‐Dou Ker
200921
9
Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
IEEE Transactions on Microwave Theory and Techniques ·Xinyan Tang, Yao Liu, Giovanni Mangraviti, Zhiwei Zong, Khaled Khalaf, Yang Zhang, Weimin Wu, Shih‐Hung Chen, Björn Debaillie, Piet Wambacq
202118
10
ESD in FinFET technologies: Past learning and emerging challenges
D. Linten, Geert Hellings, Shih‐Hung Chen, G. Groeseneken
201317
11
On gated diodes for ESD protection in bulk FinFET CMOS technology
Electrical Overstress/Electrostatic Discharge Symposium ·S. Thijs, Alessio Griffoni, Dimitri Linten, Shih‐Hung Chen, Thomas Hoffmann, G. Groeseneken
201115
12
ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits
Electrical Overstress/Electrostatic Discharge Symposium ·Shih‐Hung Chen, S. Thijs, Dimitri Linten, Mirko Scholz, Geert Hellings, G. Groeseneken
201212
13
Comparison of System-Level ESD Design Methodologies—Towards the Efficient and ESD Robust Design of Systems
IEEE Transactions on Device and Materials Reliability ·Mirko Scholz, Shih‐Hung Chen, Gerd Vandersteen, Dimitri Linten, Geert Hellings, M. Sawada, G. Groeseneken
201212
14
System-Level ESD Protection Design Using On-Wafer Characterization and Transient Simulations
IEEE Transactions on Device and Materials Reliability ·Mirko Scholz, Shih‐Hung Chen, S. Thijs, Dimitri Linten, Geert Hellings, Gerd Vandersteen, M. Sawada, G. Groeseneken
201211
15
Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices
IEEE Transactions on Electron Devices ·Alessio Griffoni, Shih‐Hung Chen, S. Thijs, Ben Kaczer, J. Franco, Dimitri Linten, A. De Keersgieter, G. Groeseneken
201110
16
Analog Computing in Memory (CIM) Technique for General Matrix Multiplication (GEMM) to Support Deep Neural Network (DNN) and Cosine Similarity Search Computing using 3D AND-type NOR Flash Devices
2022 International Electron Devices Meeting (IEDM) ·Ming‐Liang Wei, Hang-Ting Lue, Shu-Yin Ho, Yen-Po Lin, Tzu‐Hsuan Hsu, Chih-Chang Hsieh, Yung-Chun Li, Teng-Hao Yeh, Shih‐Hung Chen, Yi-Hao Jhu, Hsiang-Pang Li, Han-Wen Hu, Chun-Hsiung Hung, Keh-Chung Wang, Chih-Yuan Lu
202210
17
An automated IC chip marking inspection system for surface mounted devices on taping machines
Journal of Scientific & Industrial Research ·Shih‐Hung Chen, Te-Tan Liao
20099
18
A 28 GHz front-end module with T/R switch achieving 17.2 dBm Psat, 21.5% PAEmax and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Lirias (KU Leuven) ·Yao Liu, Xinyan Tang, Giovanni Mangraviti, Khaled Khalaf, Yang Zhang, Weimin Wu, Shih‐Hung Chen, Björn Debaillie, Piet Wambacq
20209
19
High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization
IEEE Electron Device Letters ·Chan-Yu Liao, Shih‐Hung Chen, Wen-Hsien Huang, Chang‐Hong Shen, Jia‐Min Shieh, Huang‐Chung Cheng
20189
20
RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process
IEEE Transactions on Electron Devices ·Weimin Wu, Ming‐Dou Ker, Shih‐Hung Chen, Jieting Chen, Dimitri Linten, G. Groeseneken
20208

About Shih‐Hung Chen

Shih‐Hung Chen is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Computational Theory and Mathematics, having authored 90 papers that have together received 524 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (55 papers), Semiconductor materials and devices (47 papers), Integrated Circuits and Semiconductor Failure Analysis (34 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Electromagnetic Compatibility and Noise Suppression (13 papers), 3D IC and TSV technologies (12 papers), Thin-Film Transistor Technologies (7 papers) and Advanced Photonic Communication Systems (6 papers). The work is most often cited by research in Hardware and Architecture (58 citations), Electrical and Electronic Engineering (467 citations), Computer Networks and Communications (81 citations), Computational Theory and Mathematics (28 citations) and Condensed Matter Physics (19 citations). Shih‐Hung Chen has collaborated with scholars based in Belgium, Taiwan and United States. Frequent co-authors include Ming‐Dou Ker, Dimitri Linten, G. Groeseneken, Geert Hellings, Ming-Dou Ker, Mirko Scholz, S. Thijs, Yen-Hao Shih, Hang-Ting Lue and Kuang-Yeu Hsieh. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, IEEE Photonics Technology Letters and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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