Shih‐Hung Chen

670 citations
93 papers · 526 · h-index 11

Impact in

  • Electrical and Electronic Engineering top 10%
    • Electrostatic Discharge in Electronics
    • Semiconductor materials and devices
    • Integrated Circuits and Semiconductor Failure Analysis
    • Advancements in Semiconductor Devices and Circuit Design
    • Electromagnetic Compatibility and Noise Suppression
    • 3D IC and TSV technologies
    • Thin-Film Transistor Technologies
  • Hardware and Architecture top 10%

Papers in

  • Electrical and Electronic Engineering 83
    • Electrostatic Discharge in Electronics 55
    • Semiconductor materials and devices 45
    • Integrated Circuits and Semiconductor Failure Analysis 34
    • Advancements in Semiconductor Devices and Circuit Design 23
    • Electromagnetic Compatibility and Noise Suppression 13
    • 3D IC and TSV technologies 12
    • Thin-Film Transistor Technologies 8
    • Optical Network Technologies 7
  • Condensed Matter Physics 5
Co-authors
Ming‐Dou Ker (11 shared papers)Dimitri Linten (41 shared papers)G. Groeseneken (33 shared papers)Geert Hellings (37 shared papers)Ming-Dou Ker (4 shared papers)Mirko Scholz (24 shared papers)Hang-Ting Lue (5 shared papers)S. Thijs (9 shared papers)
Journals
IEEE Transactions on Electron Devices (7 papers)IEEE Transactions on Device and Materials Reliability (5 papers)IEEE Electron Device Letters (3 papers)Microelectronics Reliability (2 papers)IEEE Photonics Technology Letters (2 papers)
Partner nations
BelgiumTaiwanUnited States

In The Last Decade

Shih‐Hung Chen

85 papers receiving 502 citations

Peers

Shih‐Hung Chen
Comparison fields: 5 of 33
  • Electrical and Electronic Engineering 472
  • Hardware and Architecture 48
  • Computer Networks and Communications 70
  • Condensed Matter Physics 19
  • Computational Theory and Mathematics 25
Replace Jaihyuk Song with:
Jaihyuk Song South Korea
Shiro Kamohara Japan
Shounak Dhar United States
Andrei Vladimirescu France
J.-Y. Yeh United States
Stefan Cserveny Switzerland
Manu Perumkunnil Belgium
Ramesh Vaddi India
J.Y. Cheng Taiwan
Takashi Ishigaki Japan
Shih‐Hung Chen relative to Jaihyuk Song South Korea Jaihyuk Song's profile →
Citations per field
00.5×5×10×16.5×
Jaihyuk Song · 1×
Citations per year

Countries citing papers authored by Shih‐Hung Chen

Since Specialization
Citations

This map shows the geographic impact of Shih‐Hung Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shih‐Hung Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shih‐Hung Chen more than expected).

Fields of papers citing papers by Shih‐Hung Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shih‐Hung Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shih‐Hung Chen. The network helps show where Shih‐Hung Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside Shih‐Hung Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Shih‐Hung Chen Line = papers co-authored together Shih‐Hung Chen links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 93 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts
Shih‐Hung Chen, Hang-Ting Lue, Yen-Hao Shih, Chieh-Fang Chen, Tzu‐Hsuan Hsu, Yanru Chen, Yi‐Hsuan Hsiao, Shih-Cheng Huang
201238
2
Overview of 3D NAND Flash and progress of vertical gate (VG) architecture
Hang-Ting Lue, Shih‐Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, Chih‐Yuan Lu
201228
3
Implementation of Initial-On ESD Protection Concept With PMOS-Triggered SCR Devices in Deep-Submicron CMOS Technology
IEEE Journal of Solid-State Circuits ·Ming‐Dou Ker, Shih‐Hung Chen
200726
4
Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs
IEEE Transactions on Circuits & Systems II Express Briefs ·Shih‐Hung Chen, Ming-Dou Ker
200925
5
A highly pitch scalable 3D vertical gate (VG) NAND flash decoded by a novel self-aligned independently controlled double gate (IDG) string select transistor (SSL)
Chih‐Ping Chen, Hang-Ting Lue, Kuo-Pin Chang, Yi‐Hsuan Hsiao, Chih-Chang Hsieh, Shih‐Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh
201223
6
Active ESD Protection Design for Interface Circuits Between Separated Power Domains Against Cross-Power-Domain ESD Stresses
IEEE Transactions on Device and Materials Reliability ·Shih‐Hung Chen, Ming-Dou Ker, Hsiang-Pin Hung
200823
7
Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection
IEEE Transactions on Electron Devices ·Shih‐Hung Chen, Ming‐Dou Ker
200921
8
Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
IEEE Transactions on Microwave Theory and Techniques ·Xinyan Tang, Yao Liu, Giovanni Mangraviti, Zhiwei Zong, Khaled Khalaf, Yang Zhang, Weimin Wu, Shih‐Hung Chen
202120
9
ESD in FinFET technologies: Past learning and emerging challenges
D. Linten, Geert Hellings, Shih‐Hung Chen, G. Groeseneken
201319
10
On gated diodes for ESD protection in bulk FinFET CMOS technology
Electrical Overstress/Electrostatic Discharge Symposium ·S. Thijs, Alessio Griffoni, Dimitri Linten, Shih‐Hung Chen, Thomas Hoffmann, G. Groeseneken
201115
11
Comparison of System-Level ESD Design Methodologies—Towards the Efficient and ESD Robust Design of Systems
IEEE Transactions on Device and Materials Reliability ·Mirko Scholz, Shih‐Hung Chen, Gerd Vandersteen, Dimitri Linten, Geert Hellings, M. Sawada, G. Groeseneken
201212
12
ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits
Electrical Overstress/Electrostatic Discharge Symposium ·Shih‐Hung Chen, S. Thijs, Dimitri Linten, Mirko Scholz, Geert Hellings, G. Groeseneken
201211
13
System-Level ESD Protection Design Using On-Wafer Characterization and Transient Simulations
IEEE Transactions on Device and Materials Reliability ·Mirko Scholz, Shih‐Hung Chen, S. Thijs, Dimitri Linten, Geert Hellings, Gerd Vandersteen, M. Sawada, G. Groeseneken
201211
14
An automated IC chip marking inspection system for surface mounted devices on taping machines
Journal of Scientific & Industrial Research ·Shih‐Hung Chen, Te-Tan Liao
200910
15
Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices
IEEE Transactions on Electron Devices ·Alessio Griffoni, Shih‐Hung Chen, S. Thijs, Ben Kaczer, Jacopo Franco, Dimitri Linten, A. De Keersgieter, G. Groeseneken
201110
16
High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization
IEEE Electron Device Letters ·Chan-Yu Liao, Shih‐Hung Chen, Wen-Hsien Huang, Chang‐Hong Shen, Jia‐Min Shieh, Huang‐Chung Cheng
201810
17
RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process
IEEE Transactions on Electron Devices ·Weimin Wu, Ming‐Dou Ker, Shih‐Hung Chen, Jieting Chen, Dimitri Linten, G. Groeseneken
202010
18
Analog Computing in Memory (CIM) Technique for General Matrix Multiplication (GEMM) to Support Deep Neural Network (DNN) and Cosine Similarity Search Computing using 3D AND-type NOR Flash Devices
2022 International Electron Devices Meeting (IEDM) ·Ming‐Liang Wei, Hang-Ting Lue, Shu-Yin Ho, Yen-Po Lin, Tzu‐Hsuan Hsu, Chih-Chang Hsieh, Yung-Chun Li, Teng-Hao Yeh
202210
19
A 28 GHz front-end module with T/R switch achieving 17.2 dBm Psat, 21.5% PAEmax and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Lirias ·Yao Liu, Xinyan Tang, Giovanni Mangraviti, Khaled Khalaf, Yang Zhang, Weimin Wu, Shih‐Hung Chen, Björn Debaillie
20209
20
Exploring ESD challenges in sub-20-nm bulk FinFET CMOS technology nodes
Electrical Overstress/Electrostatic Discharge Symposium ·Shih‐Hung Chen, Geert Hellings, S. Thijs, Dimitri Linten, Mirko Scholz, G. Groeseneken
20138

About Shih‐Hung Chen

Shih‐Hung Chen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Media Technology, Computer Networks and Communications and Atomic and Molecular Physics, and Optics, having authored 93 papers that have together received 526 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (55 papers), Semiconductor materials and devices (45 papers), Integrated Circuits and Semiconductor Failure Analysis (34 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), Electromagnetic Compatibility and Noise Suppression (13 papers), 3D IC and TSV technologies (12 papers), Thin-Film Transistor Technologies (8 papers) and Optical Network Technologies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (472 citations), Hardware and Architecture (48 citations), Computer Networks and Communications (70 citations), Condensed Matter Physics (19 citations) and Computational Theory and Mathematics (25 citations). Shih‐Hung Chen has collaborated with scholars based in Belgium, Taiwan and United States. Frequent co-authors include Ming‐Dou Ker, Dimitri Linten, G. Groeseneken, Geert Hellings, Ming-Dou Ker, Mirko Scholz, Hang-Ting Lue, S. Thijs, Yen-Hao Shih and Kuang-Yeu Hsieh. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, Microelectronics Reliability and IEEE Photonics Technology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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