F. Schanovsky

1.7k citations
62 papers · 1.4k · 1 hit paper · h-index 14

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Low-power high-performance VLSI design
    • Radiation Effects in Electronics
    • Silicon Carbide Semiconductor Technologies
    • Integrated Circuits and Semiconductor Failure Analysis

Papers in

F. Schanovsky

59 papers receiving 1.4k citations

F. Schanovsky's Hit Papers

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps 2011 · 408 citations
4080+5+10Years since publication100200300400

Peers

F. Schanovsky
Comparison fields: 5 of 28
  • Electrical and Electronic Engineering 1.3k
  • Bioengineering 19
  • Hardware and Architecture 59
  • Materials Chemistry 103
  • Safety, Risk, Reliability and Quality 14
Replace Girish Pahwa with:
Girish Pahwa India
Siddarth A. Krishnan United States
Fikru Adamu-Lema United Kingdom
Jason Jopling United States
Tahui Wang Taiwan
M. Aoulaiche Belgium
Reinaldo A. Vega United States
Shubham Sahay India
Siva Kanakasabapathy United States
P.-J. Wagner Germany
F. Schanovsky relative to Girish Pahwa India Girish Pahwa's profile →
Citations per field
00.5×10×20×26×
Girish Pahwa · 1×
Citations per year

Countries citing papers authored by F. Schanovsky

Since Specialization
Citations

This map shows the geographic impact of F. Schanovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Schanovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Schanovsky more than expected).

Fields of papers citing papers by F. Schanovsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Schanovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Schanovsky. The network helps show where F. Schanovsky may publish in the future.

Co-authors

The 25 scholars most cited alongside F. Schanovsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Schanovsky Line = papers co-authored together F. Schanovsky links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 62 papers — load more, or switch the sort, to bring in the rest.

#Work
1
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
Hit paper breakdown →
2011408
2 2010256
3 201094
4 201489
5 201866
6
NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark
201645
7 201338
8 201136
9 201335
10 201631
11 202127
12 202119
13 201218
14 201315
15 201013
16 202013
17 202212
18 201211
19 201811
20 202311

About F. Schanovsky

F. Schanovsky is a scholar working on Electrical and Electronic Engineering, Bioengineering, Materials Chemistry, Atomic and Molecular Physics, and Optics and Statistical and Nonlinear Physics, having authored 62 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), Low-power high-performance VLSI design (6 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Semiconductor materials and interfaces (2 papers), 2D Materials and Applications (2 papers), Stochastic processes and statistical mechanics (1 paper) and stochastic dynamics and bifurcation (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Bioengineering (19 citations), Hardware and Architecture (59 citations), Materials Chemistry (103 citations) and Safety, Risk, Reliability and Quality (14 citations). F. Schanovsky has collaborated with scholars based in Austria, Belgium and Germany. Frequent co-authors include Tibor Grasser, Wolfgang Goes, H. Reisinger, B. Kaczer, P.-J. Wagner, Michael Nelhiebel, Jacopo Franco, María Toledano Luque, Thomas Aichinger and Michael Waltl. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Computational Electronics, IEEE Journal of the Electron Devices Society, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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