Fabrice Oehler

2.3k citations

101 papers · 1.9k · h-index 25

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 53
- Semiconductor materials and devices 22
Materials Chemistry 45
- 2D Materials and Applications 22

Co-authors: P. Gentile (15 shared papers)C. J. Humphreys (29 shared papers)Rachel A. Oliver (31 shared papers)Menno J. Kappers (25 shared papers)Frank Glas (12 shared papers)Jean‐Christophe Harmand (13 shared papers)T. Baron (10 shared papers)P. Ferret (7 shared papers)
Journals: Journal of Applied Physics (13 papers)Nanotechnology (12 papers)Applied Physics Letters (11 papers)Nano Letters (9 papers)Physical review. B. (8 papers)
Partner nations: France United Kingdom Germany

In The Last Decade

Fabrice Oehler

99 papers receiving 1.9k citations

Peers

Countries citing papers authored by Fabrice Oehler

Since Specialization

Citations

This map shows the geographic impact of Fabrice Oehler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fabrice Oehler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fabrice Oehler more than expected).

Fields of papers citing papers by Fabrice Oehler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fabrice Oehler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fabrice Oehler. The network helps show where Fabrice Oehler may publish in the future.

Co-authors

The 25 scholars most cited alongside Fabrice Oehler, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Fabrice Oehler Line = papers co-authored together Fabrice Oehler links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 101 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Epitaxy of GaN Nanowires on Graphene Nano Letters ·Vishnuvarthan Kumaresan, Ludovic Largeau, Ali Madouri, Frank Glas, Hezhi Zhang, Fabrice Oehler, A. Cavanna, A. V. Babichev, Laurent Travers, N. Gogneau, Maria Tchernycheva, Jean‐Christophe Harmand	2016	114
2	Control of gold surface diffusion on Si nanowires HAL (Le Centre pour la Communication Scientifique Directe) ·M. den Hertog, Jean‐Luc Rouvière, F. Dhalluin, P. Desré, P. Gentile, P. Ferret, Fabrice Oehler, T. Baron	2008	99
3	Control of gold surface diffusion on Si nanowires PubMed ·M. den Hertog, Jean‐Luc Rouvière, F. Dhalluin, P. Desré, P. Gentile, P. Ferret, Fabrice Oehler, Thiery Baron	2008	94
4	Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory Nano Letters ·Giacomo Priante, Frank Glas, G. Patriarche, Konstantinos Pantzas, Fabrice Oehler, Jean‐Christophe Harmand	2016	65
5	Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001) Physical review. B. ·Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, N. Gogneau, Fabrice Oehler, Stéphane Collin, J. Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T. Charlie Johnson, Emmanuel Lhuillier, Julien Rault, Abdelkarim Ouerghi	2017	65
6	Effect of HCl on the doping and shape control of silicon nanowires Nanotechnology ·P. Gentile, A. Solanki, N. Pauc, Fabrice Oehler, B. Salem, G. Rosaz, T. Baron, M. den Hertog, V. Calvo	2012	62
7	The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem Applied Physics Letters ·Fabien Massabuau, Matthew Davies, Fabrice Oehler, S. K. Pamenter, E. J. Thrush, Menno J. Kappers, András Kovács, Tim Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, Rafal E. Dunin‐Borkowski, Joanne Etheridge, D.W.E. Allsopp, Rachel A. Oliver	2014	58
8	Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires Nano Letters ·Giacomo Priante, G. Patriarche, Fabrice Oehler, Frank Glas, Jean‐Christophe Harmand	2015	54
9	Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays Nano Letters ·Fabrice Oehler, Andréa Cattoni, Andrea Scaccabarozzi, G. Patriarche, Frank Glas, Jean‐Christophe Harmand	2017	54
10	Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method Nano Letters ·Olivier Demichel, V. Calvo, Adrien Besson, Pierre Noé, B. Salem, N. Pauc, Fabrice Oehler, P. Gentile, N. Magnéa	2010	52
11	Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory Physical Review B ·Stefan Schulz, D. P. Tanner, Eoin P. O’Reilly, (unknown), T. Martin, Paul A.J. Bagot, Michael P. Moody, Fengzai Tang, James T. Griffiths, Fabrice Oehler, Menno J. Kappers, Rachel A. Oliver, C. J. Humphreys, Duncan S. Sutherland, Michael J. Davies, P. Dawson	2015	49
12	The Importance of the Radial Growth in the Faceting of Silicon Nanowires Nano Letters ·Fabrice Oehler, P. Gentile, T. Baron, P. Ferret, M. den Hertog, Jean‐Luc Rouvière	2010	46
13	Structure and strain relaxation effects of defects in InxGa1−xN epilayers Journal of Applied Physics ·S. L. Rhode, Wai Yuen Fu, M. A. Moram, Fabien Massabuau, Menno J. Kappers, C. McAleese, Fabrice Oehler, C. J. Humphreys, Rajiv O. Dusane, S.‐L. Sahonta	2014	45
14	Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography Applied Physics Letters ·Fengzai Tang, Tongtong Zhu, Fabrice Oehler, Wai Yuen Fu, James T. Griffiths, Fabien Massabuau, Menno J. Kappers, T. Martin, Paul A.J. Bagot, Michael P. Moody, Rachel A. Oliver	2015	42
15	The effect of dislocations on the efficiency of InGaN/GaN solar cells Solar Energy Materials and Solar Cells ·Yuchen Zhang, Menno J. Kappers, Dandan Zhu, Fabrice Oehler, Feng Gao, C. J. Humphreys	2013	37
16	Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells Journal of Applied Physics ·Fabien Massabuau, L. Trinh-Xuan, D. Lodié, E. J. Thrush, Dandan Zhu, Fabrice Oehler, Tongtong Zhu, Menno J. Kappers, C. J. Humphreys, Rachel A. Oliver	2013	37
17	The effects of HCl on silicon nanowire growth: surface chlorination and existence of a ‘diffusion-limited minimum diameter’ Nanotechnology ·Fabrice Oehler, P. Gentile, T. Baron, P. Ferret	2009	36
18	Self-induced growth of vertical GaN nanowires on silica Nanotechnology ·Vishnuvarthan Kumaresan, Ludovic Largeau, Fabrice Oehler, H Zhang, O. Mauguin, Frank Glas, N. Gogneau, Maria Tchernycheva, (unknown)	2016	35
19	Hidden defects in silicon nanowires Nanotechnology ·Martien I. den Hertog, Cyril Cayron, P. Gentile, F. Dhalluin, Fabrice Oehler, T. Baron, Jean‐Luc Rouvière	2011	33
20	What is red? On the chromaticity of orange-red InGaN/GaN based LEDs Journal of Applied Physics ·Yoann Robin, Markus Pristovsek, Hiroshi Amano, Fabrice Oehler, Rachel A. Oliver, C. J. Humphreys	2018	32

About Fabrice Oehler

Fabrice Oehler is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Biomedical Engineering, having authored 101 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (40 papers), Nanowire Synthesis and Applications (30 papers), 2D Materials and Applications (22 papers), Metal and Thin Film Mechanics (22 papers), Semiconductor materials and devices (22 papers), Semiconductor Quantum Structures and Devices (21 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and interfaces (15 papers). The work is most often cited by research in Condensed Matter Physics (760 citations), Electronic, Optical and Magnetic Materials (445 citations), Atomic and Molecular Physics, and Optics (691 citations), Biomedical Engineering (901 citations) and Materials Chemistry (925 citations). Fabrice Oehler has collaborated with scholars based in France, United Kingdom and Germany. Frequent co-authors include P. Gentile, C. J. Humphreys, Rachel A. Oliver, Menno J. Kappers, Frank Glas, Jean‐Christophe Harmand, T. Baron, P. Ferret, G. Patriarche and M. den Hertog. Their work appears in journals such as Journal of Applied Physics, Nanotechnology, Applied Physics Letters, Nano Letters and Physical review. B..

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