J. Suñé

9.2k citations

300 papers · 6.5k · h-index 44

Impact in

Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 278
- Semiconductor materials and devices 198
- Advancements in Semiconductor Devices and Circuit Design 135
- Advanced Memory and Neural Computing 117
- Ferroelectric and Negative Capacitance Devices 95
- Integrated Circuits and Semiconductor Failure Analysis 62
Materials Chemistry 43
- Electronic and Structural Properties of Oxides 28

Co-authors: E. Miranda (151 shared papers)Ernest Y. Wu (50 shared papers)X. Aymerich (48 shared papers)David Jiménez (35 shared papers)M. Nafrı́a (36 shared papers)Shibing Long (19 shared papers)C. Cagli (14 shared papers)Ming Liu (16 shared papers)
Journals: IEEE Electron Device Letters (28 papers)Applied Physics Letters (23 papers)Microelectronics Reliability (22 papers)Journal of Applied Physics (21 papers)IEEE Transactions on Electron Devices (20 papers)
Partner nations: Spain United States China

In The Last Decade

J. Suñé

289 papers receiving 6.2k citations

Peers

Countries citing papers authored by J. Suñé

Since Specialization

Citations

This map shows the geographic impact of J. Suñé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Suñé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Suñé more than expected).

Fields of papers citing papers by J. Suñé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Suñé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Suñé. The network helps show where J. Suñé may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Suñé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Suñé Line = papers co-authored together J. Suñé links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 300 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	New physics-based analytic approach to the thin-oxide breakdown statistics IEEE Electron Device Letters ·J. Suñé	2001	244
2	Continuous Analytic I–V Model for Surrounding-Gate MOSFETs IEEE Electron Device Letters ·David Jiménez, (unknown), J. Suñé, Lluı́s F. Marsal, J. Pallarès, J. Roig, D. Flores	2004	225
3	On the breakdown statistics of very thin SiO2 films Thin Solid Films ·J. Suñé, I. Placencia, N. Barniol, E. Farrés, Ferran Martı́n, X. Aymerich	1990	221
4	Quantum-size effects in hafnium-oxide resistive switching Applied Physics Letters ·Shibing Long, Xiaojuan Lian, C. Cagli, Xavier Cartoixà, Riccardo Rurali, E. Miranda, David Jiménez, L. Perniola, Ming Liu, J. Suñé	2013	144
5	Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM Scientific Reports ·Shibing Long, L. Perniola, C. Cagli, Julien Buckley, Xiaojuan Lian, E. Miranda, Feng Pan, Ming Liu, J. Suñé	2013	139
6	Modeling of Nanoscale Gate-All-Around MOSFETs IEEE Electron Device Letters ·David Jiménez, J. J. Sáenz, (unknown), J. Suñé, Lluı́s F. Marsal, J. Pallarès	2004	131
7	A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown IEEE Electron Device Letters ·Shibing Long, Xiaojuan Lian, C. Cagli, L. Perniola, E. Miranda, Ming Liu, J. Suñé	2013	122
8	Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown IEEE Transactions on Electron Devices ·Ernest Y. Wu, A. Vayshenker, E. Nowak, J. Suñé, R.‐P. Vollertsen, W. Lai, D. Harmon	2002	116
9	Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability Microelectronics Reliability ·Ernest Y. Wu, J. Suñé	2005	116
10	Reliability Wearout Mechanisms in Advanced CMOS Technologies CERN Document Server (European Organization for Nuclear Research) ·A. Strong, Ernest Y. Wu, R.‐P. Vollertsen, J. Suñé, Giuseppe La Rosa, Stewart E. Rauch, Timothy D. Sullivan	2009	110
11	Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices IEEE Electron Device Letters ·Shibing Long, Xiaojuan Lian, Tianchun Ye, C. Cagli, L. Perniola, E. Miranda, Ming Liu, J. Suñé	2013	103
12	Electron transport through broken down ultra-thin SiO2 layers in MOS devices Microelectronics Reliability ·E. Miranda, J. Suñé	2003	101
13	Analysis and modeling of resistive switching statistics Journal of Applied Physics ·Shibing Long, C. Cagli, Daniele Ielmini, Ming Liu, J. Suñé	2012	95
14	Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides Solid-State Electronics ·Ernest Y. Wu, J. Suñé, W. Lai, E. Nowak, J. A. McKenna, A. Vayshenker, D. Harmon	2002	93
15	Quantum-mechanical modeling of accumulation layers in MOS structure IEEE Transactions on Electron Devices ·J. Suñé, P. Olivo, B. Riccò	1992	90
16	Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics IEEE Transactions on Electron Devices ·E. Miranda, J. Suñé, R. Rodrı́guez, M. Nafrı́a, X. Aymerich, L. Fonseca, F. Campabadal	2000	90
17	Conductance Quantization in Resistive Random Access Memory Nanoscale Research Letters ·Yang Li, Shibing Long, Yang Liu, Chen Hu, Jiao Teng, Qi Liu, Hangbing Lv, J. Suñé, Ming Liu	2015	86
18	On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part II: experimental results and the effects of stress conditions IEEE Transactions on Electron Devices ·Ernest Y. Wu, J. Suñé, Wenxi Lai	2002	81
19	Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitors Journal of Applied Physics ·M. Nafrı́a, J. Suñé, X. Aymerich	1993	78
20	Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces Journal of Applied Physics ·J. Suñé, P. Olivo, B. Riccò	1991	77

About J. Suñé

J. Suñé is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Cellular and Molecular Neuroscience and Electronic, Optical and Magnetic Materials, having authored 300 papers that have together received 6.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (198 papers), Advancements in Semiconductor Devices and Circuit Design (135 papers), Advanced Memory and Neural Computing (117 papers), Ferroelectric and Negative Capacitance Devices (95 papers), Integrated Circuits and Semiconductor Failure Analysis (62 papers), Neuroscience and Neural Engineering (30 papers), Electronic and Structural Properties of Oxides (28 papers) and Quantum and electron transport phenomena (27 papers). The work is most often cited by research in Electrical and Electronic Engineering (6.1k citations), Cellular and Molecular Neuroscience (857 citations), Polymers and Plastics (414 citations), Materials Chemistry (1.1k citations) and Electronic, Optical and Magnetic Materials (396 citations). J. Suñé has collaborated with scholars based in Spain, United States and China. Frequent co-authors include E. Miranda, Ernest Y. Wu, X. Aymerich, David Jiménez, M. Nafrı́a, Shibing Long, C. Cagli, Ming Liu, Ferran Martı́n and P. Olivo. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Microelectronics Reliability, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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