J. Roig

1.6k citations

97 papers · 1.3k · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- Electromagnetic Compatibility and Noise Suppression
- Electrostatic Discharge in Electronics
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 93
- Silicon Carbide Semiconductor Technologies 85
- Advancements in Semiconductor Devices and Circuit Design 64
- Semiconductor materials and devices 57
- Electrostatic Discharge in Electronics 13
- Electromagnetic Compatibility and Noise Suppression 8
- Advanced DC-DC Converters 7
- Integrated Circuits and Semiconductor Failure Analysis 5
Condensed Matter Physics 13
- GaN-based semiconductor devices and materials 13

Co-authors: F. Bauwens (37 shared papers)David Jiménez (9 shared papers)Lluı́s F. Marsal (5 shared papers)D. Flores (29 shared papers)J. Pallarès (4 shared papers)P. Moens (26 shared papers)J. Suñé (3 shared papers)Hamdy Abd El Hamid (3 shared papers)
Journals: Solid-State Electronics (9 papers)Microelectronics Reliability (8 papers)IEEE Electron Device Letters (6 papers)IEEE Transactions on Power Electronics (4 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: Spain Belgium United States

In The Last Decade

J. Roig

95 papers receiving 1.2k citations

Peers

Countries citing papers authored by J. Roig

Since Specialization

Citations

This map shows the geographic impact of J. Roig's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Roig with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Roig more than expected).

Fields of papers citing papers by J. Roig

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Roig. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Roig. The network helps show where J. Roig may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Roig, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Roig Line = papers co-authored together J. Roig links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 97 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Continuous Analytic I–V Model for Surrounding-Gate MOSFETs IEEE Electron Device Letters ·David Jiménez, (unknown), J. Suñé, Lluı́s F. Marsal, J. Pallarès, J. Roig, D. Flores	2004	225
2	Explicit Continuous Model for Long-Channel Undoped Surrounding Gate MOSFETs IEEE Transactions on Electron Devices ·(unknown), David Jiménez, J. Roig, Hamdy Abd El Hamid, Lluı́s F. Marsal, J. Pallarès	2005	173
3	Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters IEEE Transactions on Power Electronics ·Ignacio Castro, J. Roig, Ratmir Gelagaev, Basil Vlachakis, F. Bauwens, Diego G. Lamar, Johan Driesen	2015	70
4	P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit IEEE Electron Device Letters ·M. Fernández, X. Perpiñà, J. Roig, M. Vellvehı́, F. Bauwens, X. Jordà, M. Tack	2017	51
5	Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs IEEE Transactions on Electron Devices ·J. Roig, F. Bauwens	2015	48
6	Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs IEEE Transactions on Electron Devices ·Oana Moldovan, Benjamı́n Iñı́guez, David Jiménez, J. Roig	2007	40
7	Study of novel techniques for reducing self-heating effects in SOI power LDMOS Solid-State Electronics ·J. Roig, D. Flores, S. Hidalgo, M. Vellvehı́, J. Rebollo, José del R. Millán	2002	33
8	Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile Microelectronics Reliability ·(unknown), J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo	2004	31
9	Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET Solid-State Electronics ·Hamdy Abdelhamid, Benjamı́n Iñı́guez, David Jiménez, J. Roig, J. Pallarès, Lluı́s F. Marsal	2006	28
10	Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter W. L. Jiang, Samantha K. Murray, Mohammad Shawkat Zaman, Herbert De Vleeschouwer, J. Roig, P. Moens, Olivier Trescases	2021	28
11	Stress-Induced Mobility Enhancement for Integrated Power Transistors P. Moens, J. Roig, Francesca Clemente, Ingrid De Wolf, B. Desoete, F. Bauwens, M. Tack	2007	23
12	Thermal behavior of a superjunction MOSFET in a high-current conduction IEEE Transactions on Electron Devices ·J. Roig, E. Stefanov, F. Morancho	2006	21
13	An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT IEEE Transactions on Power Electronics ·W. L. Jiang, Samantha K. Murray, Mohammad Shawkat Zaman, Herbert De Vleeschouwer, P. Moens, J. Roig, Olivier Trescases	2022	21
14	A numerical study of field plate configurations in RF SOI LDMOS transistors Solid-State Electronics ·(unknown), J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo	2005	20
15	An Investigation into the Causes of C_OSS Losses in GaN-on-Si HEMTs Jia Zhuang, Grayson Zulauf, J. Roig, J.D. Plummer, Juan Rivas-Davila	2019	19
16	High-accuracy modelling of ZVS energy loss in advanced power transistors Consultation of the Doctoral Thesis Database (TESEO) (Ministerio de Educación, Cultura y Deporte) ·J. Roig, German Gomez, F. Bauwens, Basil Vlachakis, María R. Rogina, Alberto Rodríguez, Diego G. Lamar	2018	17
17	Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter Mohammad Shawkat Zaman, W. L. Jiang, Samantha K. Murray, Herbert De Vleeschouwer, P. Moens, J. Roig, Olivier Trescases	2020	15
18	Internal self-damping optimization in trench power FETs for high-frequency conversion J. Roig, C.F. Tong, F. Bauwens, Renaud Gillon, Hal Massie, Charles Hoggatt	2014	15
19	Energy limits for unclamped inductive switching in high-voltage planar and SuperJunction power MOSFETs J. Roig, P. Moens, Jason McDonald, P. Vanmeerbeek, F. Bauwens, M. Tack	2011	14
20	Reduction of self-heating effect on SOIM devices Microelectronics Reliability ·J. Roig, D. Flores, M. Vellvehı́, J. Rebollo, José del R. Millán	2002	13

About J. Roig

J. Roig is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Control and Systems Engineering, having authored 97 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (85 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers), Semiconductor materials and devices (57 papers), Electrostatic Discharge in Electronics (13 papers), GaN-based semiconductor devices and materials (13 papers), Electromagnetic Compatibility and Noise Suppression (8 papers), Advanced DC-DC Converters (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Condensed Matter Physics (228 citations), Biomedical Engineering (119 citations), Electronic, Optical and Magnetic Materials (33 citations) and Atomic and Molecular Physics, and Optics (43 citations). J. Roig has collaborated with scholars based in Spain, Belgium and United States. Frequent co-authors include F. Bauwens, David Jiménez, Lluı́s F. Marsal, D. Flores, J. Pallarès, P. Moens, J. Suñé, Hamdy Abd El Hamid, J. Rebollo and S. Hidalgo. Their work appears in journals such as Solid-State Electronics, Microelectronics Reliability, IEEE Electron Device Letters, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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