Chenhsin Lien

4.5k citations

129 papers · 3.9k · 1 hit paper · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Perovskite Materials and Applications
Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 116
- Semiconductor materials and devices 57
- Advancements in Semiconductor Devices and Circuit Design 42
- Advanced Memory and Neural Computing 36
- Ferroelectric and Negative Capacitance Devices 32
- Silicon Carbide Semiconductor Technologies 14
- Thin-Film Transistor Technologies 12
Materials Chemistry 39
- 2D Materials and Applications 15

Co-authors: P. J. Tzeng (3 shared papers)Yen‐Fu Lin (17 shared papers)Shih‐Hsien Yang (13 shared papers)Chien-Ting Lin (1 shared paper)Ming‐Jinn Tsai (15 shared papers)M.-J. Tsai (3 shared papers)Tong Wu (1 shared paper)M.‐J. Tsai (5 shared papers)
Journals: IEEE Electron Device Letters (17 papers)IEEE Transactions on Electron Devices (11 papers)Journal of Applied Physics (8 papers)Japanese Journal of Applied Physics (7 papers)Applied Physics Letters (7 papers)
Partner nations: Taiwan China United States

In The Last Decade

Chenhsin Lien

125 papers receiving 3.8k citations

Chenhsin Lien's Hit Papers

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Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM 2008 · 548 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2008 Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Peers

Countries citing papers authored by Chenhsin Lien

Since Specialization

Citations

This map shows the geographic impact of Chenhsin Lien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chenhsin Lien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chenhsin Lien more than expected).

Fields of papers citing papers by Chenhsin Lien

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chenhsin Lien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chenhsin Lien. The network helps show where Chenhsin Lien may publish in the future.

Co-authors

The 25 scholars most cited alongside Chenhsin Lien, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chenhsin Lien Line = papers co-authored together Chenhsin Lien links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 129 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Hsuan‐Yu Lee, P. S. Chen, Tong Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, Chien-Ting Lin, F. Chen Hit paper breakdown →	2008	548
2	Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit Advanced Functional Materials ·Fei Xue, Weijin Hu, Ko‐Chun Lee, Li‐Syuan Lu, Junwei Zhang, Hao‐Ling Tang, Ali Han, Wei‐Ting Hsu	2018	349
3	Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Yu‐I Hsu, S. M. Wang, W. H. Liu, Chen-Han Tsai	2010	226
4	A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang	2011	218
5	Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap IEEE Electron Device Letters ·H.Y. Lee, Y.S. Chen, P.S. Chen, Ting Wu, F. Chen, C.C. Wang, P. J. Tzeng, M.‐J. Tsai	2009	182
6	Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, Wei‐Cheng Lin, W. H. Liu, Yu‐I Hsu	2009	176
7	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features Nature Communications ·Feng‐Shou Yang, Mengjiao Li, Mu‐Pai Lee, I-Ying Ho, Jiann‐Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen‐Kuei Chang	2020	153
8	High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping Advanced Materials ·Mengjiao Li, Che‐Yi Lin, Shih‐Hsien Yang, Yuan‐Ming Chang, Jen‐Kuei Chang, Feng‐Shou Yang, Chaorong Zhong, Wen‐Bin Jian	2018	143
9	An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance IEEE Electron Device Letters ·Yu‐Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Tai-Yuan Wu, Ching‐Chiun Wang, Pei-Jer Tzeng, Frederick Chen, Ming‐Jinn Tsai	2010	125
10	Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors ACS Nano ·Hao‐Ling Tang, Ming‐Hui Chiu, Chien‐Chih Tseng, Shih‐Hsien Yang, Kuan-Jhih Hou, Sung-Yen Wei, Jing‐Kai Huang, Yen‐Fu Lin	2017	121
11	A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes IEEE Journal of Solid-State Circuits ·Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen	2013	91
12	Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping Advanced Materials ·Yuan‐Ming Chang, Shih‐Hsien Yang, Che‐Yi Lin, Chang‐Hung Chen, Chenhsin Lien, Wen‐Bin Jian, Keiji Ueno, Yuen‐Wuu Suen	2018	90
13	The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectors Journal of Applied Physics ·Yimin Huang, Chenhsin Lien, Tan‐Fu Lei	1993	72
14	Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory Applied Physics Letters ·Heng Yuan Lee, Pang Shiu Chen, Tai Yuan Wu, Ching Chiun Wang, P. J. Tzeng, Cha Hsin Lin, Frederick Chen, Ming‐Jinn Tsai	2008	66
15	A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory IEEE Electron Device Letters ·Shih-Ching Chen, Ting‐Chang Chang, Po‐Tsun Liu, Yung‐Chun Wu, Po-Shun Lin, Bae‐Heng Tseng, Jang-Hung Shy, Simon M. Sze	2007	56
16	Ultra high density 3D via RRAM in pure 28nm CMOS process Min-Che Hsieh, Yu‐Cheng Liao, Y. L. Chin, Chenhsin Lien, Tzong-Sheng Chang, Yue‐Der Chih, Sreedhar Natarajan, Ming‐Jinn Tsai	2013	55
17	Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot IEEE Electron Device Letters ·Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Sum-Min Wang, Pei-Yi Gu, Yen-Ya Hsu, Chen-Han Tsai	2011	54
18	$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode IEEE Electron Device Letters ·Heng Yuan Lee, Pang-Shiu Chen, Tai-Yuan Wu, Yu‐Sheng Chen, F. Chen, Ching‐Chiun Wang, Pei-Jer Tzeng, Chia‐Hua Lin	2009	54
19	Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors Advanced Functional Materials ·Ko‐Chun Lee, Shih‐Hsien Yang, Yung‐Shang Sung, Yuan‐Ming Chang, Che‐Yi Lin, Feng‐Shou Yang, Mengjiao Li, Kenji Watanabe	2019	48
20	Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics Advanced Functional Materials ·Mengjiao Li, Feng‐Shou Yang, Yung‐Chi Hsiao, Che‐Yi Lin, Hsing‐Mei Wu, Shih‐Hsien Yang, Hao‐Ruei Li, Chenhsin Lien	2019	44

About Chenhsin Lien

Chenhsin Lien is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Biomedical Engineering, having authored 129 papers that have together received 3.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Advanced Memory and Neural Computing (36 papers), Ferroelectric and Negative Capacitance Devices (32 papers), 2D Materials and Applications (15 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor Quantum Structures and Devices (13 papers) and Thin-Film Transistor Technologies (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.3k citations), Polymers and Plastics (449 citations), Materials Chemistry (1.5k citations), Cellular and Molecular Neuroscience (445 citations) and Hardware and Architecture (90 citations). Chenhsin Lien has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include P. J. Tzeng, Yen‐Fu Lin, Shih‐Hsien Yang, Chien-Ting Lin, Ming‐Jinn Tsai, M.-J. Tsai, Tong Wu, M.‐J. Tsai, Ko‐Chun Lee and Yuan‐Ming Chang. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, Japanese Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Chenhsin Lien

Chenhsin Lien's Hit Papers

Peers

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Fields of papers citing papers by Chenhsin Lien

All Works

About Chenhsin Lien

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