Chenhsin Lien

4.3k citations

127 papers · 3.4k · 1 hit paper · h-index 28

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Perovskite Materials and Applications
Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 114
- Semiconductor materials and devices 56
- Advancements in Semiconductor Devices and Circuit Design 41
- Advanced Memory and Neural Computing 34
- Ferroelectric and Negative Capacitance Devices 31
- Silicon Carbide Semiconductor Technologies 13
- Thin-Film Transistor Technologies 12
Materials Chemistry 38
- 2D Materials and Applications 14

Co-authors: P. J. Tzeng (3 shared papers)Yen‐Fu Lin (16 shared papers)Shih‐Hsien Yang (13 shared papers)M.-J. Tsai (3 shared papers)Ming‐Jinn Tsai (15 shared papers)Tong Wu (1 shared paper)Chien-Ting Lin (1 shared paper)M.‐J. Tsai (5 shared papers)
Journals: IEEE Electron Device Letters (17 papers)IEEE Transactions on Electron Devices (11 papers)Journal of Applied Physics (8 papers)Japanese Journal of Applied Physics (7 papers)Applied Physics Letters (7 papers)
Partner nations: Taiwan China United States

In The Last Decade

Chenhsin Lien

124 papers receiving 3.3k citations

Chenhsin Lien's Hit Papers

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Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM 2008 · 505 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2008 Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Peers

Countries citing papers authored by Chenhsin Lien

Since Specialization

Citations

This map shows the geographic impact of Chenhsin Lien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chenhsin Lien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chenhsin Lien more than expected).

Fields of papers citing papers by Chenhsin Lien

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chenhsin Lien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chenhsin Lien. The network helps show where Chenhsin Lien may publish in the future.

Co-authors

The 25 scholars most cited alongside Chenhsin Lien, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chenhsin Lien Line = papers co-authored together Chenhsin Lien links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 127 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Hsuan‐Yu Lee, P. S. Chen, Tong Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, Chien-Ting Lin, F. Chen, Chenhsin Lien, M.-J. Tsai Hit paper breakdown →	2008	505
2	Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In₂Se₃ Nanoflakes down to the Monolayer Limit Advanced Functional Materials ·Fei Xue, Weijin Hu, Ko‐Chun Lee, Li‐Syuan Lu, Junwei Zhang, Hao‐Ling Tang, Ali Han, Wei‐Ting Hsu, Shaobo Tu, Wen‐Hao Chang, Chenhsin Lien, Jr‐Hau He, Zhidong Zhang, Lain‐Jong Li, Xixiang Zhang	2018	306
3	Evidence and solution of over-RESET problem for HfO<inf>X</inf> based resistive memory with sub-ns switching speed and high endurance H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Yu‐I Hsu, S. M. Wang, W. H. Liu, Chen-Han Tsai, S. S. Sheu, Po-Hsien Chiang, Wei‐Cheng Lin, Chia‐Hua Lin, Wen‐Shan Chen, F. T. Chen, Chenhsin Lien, M.‐J. Tsai	2010	206
4	Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, Wei‐Cheng Lin, W. H. Liu, Yu‐I Hsu, S. S. Sheu, Po-Hsien Chiang, Wen‐Shan Chen, F. T. Chen, Chenhsin Lien, M.‐J. Tsai	2009	170
5	Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap IEEE Electron Device Letters ·H.Y. Lee, Y.S. Chen, P.S. Chen, Ting Wu, F. Chen, C.C. Wang, P. J. Tzeng, M.‐J. Tsai, Chenhsin Lien	2009	166
6	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features Nature Communications ·Feng‐Shou Yang, Mengjiao Li, Mu‐Pai Lee, I-Ying Ho, Jiann‐Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen‐Kuei Chang, Shih‐Hsien Yang, Yuan‐Ming Chang, Ko‐Chun Lee, Yi‐Chia Chou, Ching‐Hwa Ho, Wenwu Li, Chenhsin Lien, Yen‐Fu Lin	2020	145
7	High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping Advanced Materials ·Mengjiao Li, Che‐Yi Lin, Shih‐Hsien Yang, Yuan‐Ming Chang, Jen‐Kuei Chang, Feng‐Shou Yang, Chaorong Zhong, Wen‐Bin Jian, Chenhsin Lien, Ching‐Hwa Ho, Heng‐Jui Liu, Rong Huang, Wenwu Li, Yen‐Fu Lin, Junhao Chu	2018	134
8	An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance IEEE Electron Device Letters ·Yu‐Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Tai-Yuan Wu, Ching‐Chiun Wang, Pei-Jer Tzeng, Frederick Chen, Ming‐Jinn Tsai, Chenhsin Lien	2010	119
9	Multilayer Graphene–WSe₂ Heterostructures for WSe₂ Transistors ACS Nano ·Hao‐Ling Tang, Ming‐Hui Chiu, Chien‐Chih Tseng, Shih‐Hsien Yang, Kuan-Jhih Hou, Sung-Yen Wei, Jing‐Kai Huang, Yen‐Fu Lin, Chenhsin Lien, Lain‐Jong Li	2017	113
10	Reversible and Precisely Controllable p/n‐Type Doping of MoTe₂ Transistors through Electrothermal Doping Advanced Materials ·Yuan‐Ming Chang, Shih‐Hsien Yang, Che‐Yi Lin, Chang‐Hung Chen, Chenhsin Lien, Wen‐Bin Jian, Keiji Ueno, Yuen‐Wuu Suen, Kazuhito Tsukagoshi, Yen‐Fu Lin	2018	79
11	A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes IEEE Journal of Solid-State Circuits ·Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chenhsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming‐Jer Kao, Ming‐Jinn Tsai	2013	78
12	The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectors Journal of Applied Physics ·Yimin Huang, Chenhsin Lien, Tan‐Fu Lei	1993	72
13	Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory Applied Physics Letters ·Heng Yuan Lee, Pang Shiu Chen, Tai Yuan Wu, Ching Chiun Wang, P. J. Tzeng, Cha Hsin Lin, Frederick Chen, Ming‐Jinn Tsai, Chenhsin Lien	2008	64
14	A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory IEEE Electron Device Letters ·Shih-Ching Chen, Ting‐Chang Chang, Po‐Tsun Liu, Yung‐Chun Wu, Po-Shun Lin, Bae‐Heng Tseng, Jang-Hung Shy, Simon M. Sze, Chun‐Yen Chang, Chenhsin Lien	2007	56
15	$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode IEEE Electron Device Letters ·Heng Yuan Lee, Pang-Shiu Chen, Tai-Yuan Wu, Yu‐Sheng Chen, F. Chen, Ching‐Chiun Wang, Pei-Jer Tzeng, Chia‐Hua Lin, Ming‐Jinn Tsai, Chenhsin Lien	2009	51
16	Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot IEEE Electron Device Letters ·Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Sum-Min Wang, Pei-Yi Gu, Yen-Ya Hsu, Chen-Han Tsai, Wei-Su Chen, Frederick Chen, Ming‐Jinn Tsai, Chenhsin Lien	2011	51
17	Ultra high density 3D via RRAM in pure 28nm CMOS process Min-Che Hsieh, Yu‐Cheng Liao, Y. L. Chin, Chenhsin Lien, Tzong-Sheng Chang, Yue‐Der Chih, S. Natarajan, Ming‐Jinn Tsai, Ya‐Chin King, Chrong Jung Lin	2013	46
18	Analog Circuit Applications Based on All‐2D Ambipolar ReSe₂ Field‐Effect Transistors Advanced Functional Materials ·Ko‐Chun Lee, Shih‐Hsien Yang, Yung‐Shang Sung, Yuan‐Ming Chang, Che‐Yi Lin, Feng‐Shou Yang, Mengjiao Li, Kenji Watanabe, Takashi Taniguchi, Ching‐Hwa Ho, Chenhsin Lien, Yen‐Fu Lin	2019	46
19	Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics Advanced Functional Materials ·Mengjiao Li, Feng‐Shou Yang, Yung‐Chi Hsiao, Che‐Yi Lin, Hsing‐Mei Wu, Shih‐Hsien Yang, Hao‐Ruei Li, Chenhsin Lien, Ching‐Hwa Ho, Heng‐Jui Liu, Wenwu Li, Yen‐Fu Lin, Ying‐Chih Lai	2019	43
20	Inverse paired-pulse facilitation in neuroplasticity based on interface-boosted charge trapping layered electronics Nano Energy ·Ko‐Chun Lee, Mengjiao Li, Yu‐Hsiang Chang, Shih‐Hsien Yang, Che‐Yi Lin, Yuan‐Ming Chang, Feng‐Shou Yang, Kenji Watanabe, Takashi Taniguchi, Ching‐Hwa Ho, Chenhsin Lien, Shu‐Ping Lin, Po‐Wen Chiu, Yen‐Fu Lin	2020	40

About Chenhsin Lien

Chenhsin Lien is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Cellular and Molecular Neuroscience, having authored 127 papers that have together received 3.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers), Advanced Memory and Neural Computing (34 papers), Ferroelectric and Negative Capacitance Devices (31 papers), 2D Materials and Applications (14 papers), Semiconductor Quantum Structures and Devices (13 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Thin-Film Transistor Technologies (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.9k citations), Polymers and Plastics (412 citations), Materials Chemistry (1.3k citations), Cellular and Molecular Neuroscience (384 citations) and Atomic and Molecular Physics, and Optics (361 citations). Chenhsin Lien has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include P. J. Tzeng, Yen‐Fu Lin, Shih‐Hsien Yang, M.-J. Tsai, Ming‐Jinn Tsai, Tong Wu, Chien-Ting Lin, M.‐J. Tsai, Ko‐Chun Lee and Yuan‐Ming Chang. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, Japanese Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Chenhsin Lien

Chenhsin Lien's Hit Papers

Peers

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All Works

About Chenhsin Lien

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