D. Bergstrom

2.8k citations
11 papers · 2.3k · 2 hit papers · h-index 10

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
    • Low-power high-performance VLSI design

Papers in

D. Bergstrom

11 papers receiving 2.2k citations

D. Bergstrom's Hit Papers

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors 2012 · 627 citations
6270+6+12Years since publication200400600

Peers

D. Bergstrom
Comparison fields: 5 of 55
  • Electrical and Electronic Engineering 1.8k
  • Hardware and Architecture 143
  • Mechanics of Materials 479
  • Materials Chemistry 599
  • Condensed Matter Physics 123
Replace T. Nakamura with:
T. Nakamura Japan
Philip C. Yashar United States
Donald S. Gardner United States
Shichang Zou China
Dale J. Pearson United States
Wouter Ruythooren Belgium
Bucknell C. Webb United States
Frank Fournel France
Tsuyoshi Takahashi Japan
Peter W. Wyatt United States
D. Bergstrom relative to T. Nakamura Japan T. Nakamura's profile →
Citations per field
00.5×2×4×6×8.7×
T. Nakamura · 1×
Citations per year

Countries citing papers authored by D. Bergstrom

Since Specialization
Citations

This map shows the geographic impact of D. Bergstrom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Bergstrom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Bergstrom more than expected).

Fields of papers citing papers by D. Bergstrom

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Bergstrom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Bergstrom. The network helps show where D. Bergstrom may publish in the future.

Co-authors

The 21 scholars most cited alongside D. Bergstrom, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Bergstrom Line = papers co-authored together D. Bergstrom links everyone, so they are left out of the graph.

All Works

11 of 11 papers shown
#Work
1
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
Hit paper breakdown →
2007649
2
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
Hit paper breakdown →
2012627
3 1995374
4 2017311
5 2009152
6 1997110
7 202236
8 199622
9 199422
10 201013
11 20002

About D. Bergstrom

D. Bergstrom is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Mechanics of Materials, Condensed Matter Physics and Cellular and Molecular Neuroscience, having authored 11 papers that have together received 2.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Copper Interconnects and Reliability (4 papers), Metal and Thin Film Mechanics (4 papers), GaN-based semiconductor devices and materials (2 papers), Ferroelectric and Negative Capacitance Devices (2 papers), Nanofabrication and Lithography Techniques (1 paper) and Nanomaterials and Printing Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Hardware and Architecture (143 citations), Mechanics of Materials (479 citations), Materials Chemistry (599 citations) and Condensed Matter Physics (123 citations). D. Bergstrom has collaborated with scholars based in United States, Sweden and Switzerland. Frequent co-authors include Ivan Petrov, Joseph E. Greene, J.‐E. Sundgren, Lars Hultman, W.‐D. Münz, P. Losbichler, Thanh Thuy Trinh, T. Hurkmans, Claudia Wiemer and Joseph Greene. Their work appears in journals such as Thin Solid Films, Journal of Applied Physics, Applied Physics Letters, Micro & Nano Letters and 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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