Cory E. Weber

2.2k citations

31 papers · 1.8k · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 24
- Silicon Carbide Semiconductor Technologies 5
- Thin-Film Transistor Technologies 5
- Integrated Circuits and Semiconductor Failure Analysis 4
- Silicon and Solar Cell Technologies 4
- Ferroelectric and Negative Capacitance Devices 3
Atomic and Molecular Physics, and Optics 8
- Semiconductor materials and interfaces 4

Co-authors: R. Kotlyar (11 shared papers)John R. Abelson (3 shared papers)S. Cea (10 shared papers)S. M. Gates (1 shared paper)Sayed Hasan (4 shared papers)Mark A. Stettler (11 shared papers)M.D. Giles (8 shared papers)L. Shifren (7 shared papers)
Journals: IEEE Transactions on Electron Devices (4 papers)Applied Physics Letters (3 papers)Journal of Computational Electronics (3 papers)IEEE Transactions on Nanotechnology (1 paper)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)
Partner nations: United States United Kingdom Germany

In The Last Decade

Cory E. Weber

31 papers receiving 1.7k citations

Cory E. Weber's Hit Papers

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A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors 2012 · 627 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2012 A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

Peers

Countries citing papers authored by Cory E. Weber

Since Specialization

Citations

This map shows the geographic impact of Cory E. Weber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cory E. Weber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cory E. Weber more than expected).

Fields of papers citing papers by Cory E. Weber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cory E. Weber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cory E. Weber. The network helps show where Cory E. Weber may publish in the future.

Co-authors

The 25 scholars most cited alongside Cory E. Weber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Cory E. Weber Line = papers co-authored together Cory E. Weber links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors Chris Auth, Cifford Allen, A. Blattner, D. Bergstrom, Mark Brazier, M. C. Bost, Markus J. Buehler, Vinay Chikarmane Hit paper breakdown →	2012	627
2	A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell Chris Auth, S. Balakrishnan, M. C. Bost, R. Brain, Vinay Chikarmane, R. Heussner, M. Hussein, Jeong-Hyun Hwang	2005	190
3	A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell Scott E. Thompson, N. Anand, M. A. Armstrong, Chris Auth, B. Arcot, M. Alavi, Jeff Bielefeld, Robert M. Bigwood	2003	185
4	High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors Paul A. Packan, Sheikh Ali Akbar, M. A. Armstrong, D. Bergstrom, Mark Brazier, H. Deshpande, Kapil Dev, G. Ding	2009	152
5	A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array S. Natarajan, M. A. Armstrong, M. C. Bost, R. Brain, Mark Brazier, Chip-Hong Chang, Vinay Chikarmane, M. J. Childs	2008	147
6	Scaling properties of the tunneling field effect transistor (TFET): Device and circuit Solid-State Electronics ·Th. Nirschl, St. Henzler, Juergen Fischer, Michael Fulde, A. Bargagli-Stoffi, M. Sterkel, Josef Sedlmeir, Cory E. Weber	2005	83
7	High performance Hi-K + metal gate strain enhanced transistors on (110) silicon Paul A. Packan, S. Cea, H. Deshpande, Tahir Ghani, M.D. Giles, Oleg Golonzka, M. Hattendorf, R. Kotlyar	2008	48
8	An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering Applied Physics Letters ·Callan McCormick, Cory E. Weber, John R. Abelson, S. M. Gates	1997	45
9	Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs IEEE Electron Device Letters ·Raseong Kim, Titash Rakshit, R. Kotlyar, Sayed Hasan, Cory E. Weber	2011	38
10	Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress Applied Physics Letters ·L. Shifren, X. Wang, Philippe Matagne, Borna J. Obradovic, Chris Auth, S. Cea, Tahir Ghani, Jianli He	2004	27
11	Cathodic Sputtering for Micro-Diffusion Studies Journal of Applied Physics ·Thomas F. Fisher, Cory E. Weber	1952	25
12	Understanding stress enhanced performance in Intel 90nm CMOS technology M.D. Giles, M. A. Armstrong, Chris Auth, S. Cea, Tahir Ghani, Thomas Hoffmann, R. Kotlyar, Philippe Matagne	2004	25
13	Low temperature fabrication of amorphous silicon thin film transistors by dc reactive magnetron sputtering Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Callan McCormick, Cory E. Weber, John R. Abelson, Gary Ernest Davis, Robert E. Weiss, Verle W. Aebi	1997	24
14	Industrial TCAD: Modeling Atoms to Chips IEEE Transactions on Electron Devices ·Mark A. Stettler, Sayed Hasan, Lei Jiang, Patrick H. Keys, Colin Landon, Prabakar Marepalli, Daniel Pantuso, Cory E. Weber +1 other	2021	16
15	Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field IEEE Transactions on Electron Devices ·R. Kotlyar, Rafael Rios, Cory E. Weber, T. Linton, M. A. Armstrong, Kelin J. Kuhn	2015	16
16	Silicon RibbonFET CMOS at 6nm Gate Length Abhishek K. Agrawal, Wriddhi Chakraborty, Wei Li, Hwa-Sung Ryu, Brian Markman, Rahul Paul, ChingYao Huang, Seung-Hyun Choi	2024	16
17	Modeling of NMOS performance gains from edge dislocation stress Cory E. Weber, H. Deshpande, Oleg Golonzka, Mark Y. Liu +1 other	2011	16
18	Process modeling for advanced device technologies Journal of Computational Electronics ·Sílvia Silva da Costa Botelho, Anurag Chaudhry, Peter Fleischmann, M.D. Giles, Anton Grigoriev, Ananth P. Kaushik, Patrick H. Keys, Harold W. Kennel	2013	11
19	Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance Journal of Computational Electronics ·R. Kotlyar, M.D. Giles, S. Cea, T. Linton, L. Shifren, Cory E. Weber, Mark A. Stettler	2009	9
20	The importance of metal transverse momentum for silicon contact resistivity Applied Physics Letters ·Cory E. Weber	2013	9

About Cory E. Weber

Cory E. Weber is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Hardware and Architecture, Materials Chemistry and Biomedical Engineering, having authored 31 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Silicon Carbide Semiconductor Technologies (5 papers), Thin-Film Transistor Technologies (5 papers), Semiconductor materials and interfaces (4 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Silicon and Solar Cell Technologies (4 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Hardware and Architecture (145 citations), Biomedical Engineering (302 citations), Atomic and Molecular Physics, and Optics (156 citations) and Materials Chemistry (178 citations). Cory E. Weber has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include R. Kotlyar, John R. Abelson, S. Cea, S. M. Gates, Sayed Hasan, Mark A. Stettler, M.D. Giles, L. Shifren, Titash Rakshit and Raseong Kim. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Computational Electronics, IEEE Transactions on Nanotechnology and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Cory E. Weber's Hit Papers

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