D. Roy

1.3k citations

94 papers · 997 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture top 10%
- VLSI and Analog Circuit Testing

Papers in

Electrical and Electronic Engineering 84
- Semiconductor materials and devices 74
- Advancements in Semiconductor Devices and Circuit Design 11
- Integrated Circuits and Semiconductor Failure Analysis 8
- Radiation Effects in Electronics 6
- Low-power high-performance VLSI design 3
- Silicon Carbide Semiconductor Technologies 3
- Photonic and Optical Devices 3
Electronic, Optical and Magnetic Materials 14
- Copper Interconnects and Reliability 14

Co-authors: E. Vincent (18 shared papers)V. Huard (23 shared papers)A. Bravaix (13 shared papers)G. Ghibaudo (33 shared papers)X. Federspiel (31 shared papers)Mustapha Rafik (27 shared papers)Sylvie Bruyere (21 shared papers)Frederic Monsieur (20 shared papers)
Journals: Microelectronics Reliability (8 papers)Microelectronic Engineering (5 papers)IEEE Transactions on Device and Materials Reliability (3 papers)Micro and Nano Engineering (1 paper)Solid-State Electronics (1 paper)
Partner nations: France United States Italy

In The Last Decade

D. Roy

92 papers receiving 963 citations

Peers

Countries citing papers authored by D. Roy

Since Specialization

Citations

This map shows the geographic impact of D. Roy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Roy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Roy more than expected).

Fields of papers citing papers by D. Roy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Roy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Roy. The network helps show where D. Roy may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Roy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Roy Line = papers co-authored together D. Roy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 94 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature IEEE International Reliability Physics Symposium proceedings ·A. Bravaix, Chloe Guerin, V. Huard, D. Roy, J.M. Roux, E. Vincent	2009	159
2	A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment IEEE International Reliability Physics Symposium proceedings ·Frederic Monsieur, E. Vincent, D. Roy, Sylvie Bruyere, J.C. Vildeuil, G. Pananakakis, G. Ghibaudo	2003	95
3	$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared Technical digest - International Electron Devices Meeting/Technical digest ·Jonathan S. Steckel, Emmanuelle Josse, Andras G. Pattantyus‐Abraham, Maud Bidaud, Benedicte P. Mortini, H. Bilgen, O. Arnaud, Stéphane Allegret	2021	49
4	Microscopic scale characterization and modeling of transistor degradation under HC stress Microelectronics Reliability ·Yoann Mamy Randriamihaja, V. Huard, X. Federspiel, Alban Zaka, Pierpaolo Palestri, D. Rideau, D. Roy, A. Bravaix	2012	44
5	28nm node bulk vs FDSOI reliability comparison IEEE International Reliability Physics Symposium proceedings ·X. Federspiel, Damien Angot, Mustapha Rafik, F. Cacho, Aurelie Bajolet, N. Planes, D. Roy, Michel Haond	2012	31
6	Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage IEEE International Reliability Physics Symposium proceedings ·A. Bravaix, Yoann Mamy Randriamihaja, V. Huard, Damien Angot, X. Federspiel, Wafa Arfaoui, Pascal Mora, F. Cacho	2013	30
7	Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization Microelectronic Engineering ·M. Vilmay, D. Roy, Fabien Volpi, Jean-Marc Chaix	2008	29
8	Interaction between BTI and HCI degradation in High-K devices IEEE International Reliability Physics Symposium proceedings ·X. Federspiel, Mustapha Rafik, Damien Angot, F. Cacho, D. Roy	2013	28
9	Energy-driven Hot-Carrier model in advanced nodes IEEE International Reliability Physics Symposium proceedings ·Wafa Arfaoui, X. Federspiel, Pascal Mora, Frederic Monsieur, F. Cacho, D. Roy, A. Bravaix	2014	26
10	Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests Microelectronic Engineering ·Emmanuel Chery, X. Federspiel, D. Roy, Fabien Volpi, Jean-Marc Chaix	2013	24
11	Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node IEEE International Reliability Physics Symposium proceedings ·A. Bravaix, Chloe Guerin, Didier Goguenheim, V. Huard, D. Roy, Carine Besset, Sophie Renard, Yoann Mamy Randriamihaja	2010	21
12	Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating IEEE Symposium on VLSI Technology ·X. Garros, Sylvain Barraud, Genaro Mariniello, G. Reimbold, D. Roy, E. Vincent, G. Ghibaudo +1 other	2016	19
13	Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides IEEE International Reliability Physics Symposium proceedings ·Frederic Monsieur, E. Vincent, G. Ribes, V. Huard, Sylvie Bruyere, D. Roy, G. Pananakakis, G. Ghibaudo	2003	18
14	New perspectives on NBTI in advanced technologies: modelling & characterization M. Denais, V. Huard, C. Parthasarathy, G. Ribes, Frank Perrier, D. Roy, A. Bravaix	2005	17
15	Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters IEEE International Reliability Physics Symposium proceedings ·Yoann Mamy Randriamihaja, Alban Zaka, V. Huard, Mustapha Rafik, D. Rideau, D. Roy	2012	17
16	Origin of Vt Instabilities in High- $k$ Dielectrics Jahn–Teller Effect or Oxygen Vacancies IEEE Transactions on Device and Materials Reliability ·G. Ribes, Sylvie Bruyere, D. Roy, C. Parthasarthy, M. Denais, V. Huard, T. Skotnicki, G. Ghibaudo +1 other	2006	16
17	Reliability issues for nano-scale CMOS dielectrics Microelectronic Engineering ·G. Ribes, Mustapha Rafik, D. Roy	2007	16
18	Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC) Thierry Devoivre, M.M. Lunenborg, J.-P. Carrere, Paul Ferreira, W.J. Toren, A. J. Vandegoor, Thierry Berger, O. Hinsinger	2003	12
19	New Understanding on the Breakdown of High-K Dielectric Stacks using Multi-Vibrational Hydrogen Release Model IEEE International Reliability Physics Symposium proceedings ·Mustapha Rafik, G. Ribes, D. Roy, G. Ghibaudo	2007	12
20	Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes IEEE International Integrated Reliability Workshop final report ·Wafa Arfaoui, X. Federspiel, Pascal Mora, Mustapha Rafik, D. Roy, A. Bravaix	2013	12

About D. Roy

D. Roy is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Instrumentation, Hardware and Architecture and Safety, Risk, Reliability and Quality, having authored 94 papers that have together received 997 indexed citations. Recurring topics across this work include Semiconductor materials and devices (74 papers), Copper Interconnects and Reliability (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Radiation Effects in Electronics (6 papers), Low-power high-performance VLSI design (3 papers), Silicon Carbide Semiconductor Technologies (3 papers) and Photonic and Optical Devices (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (871 citations), Hardware and Architecture (66 citations), Electronic, Optical and Magnetic Materials (98 citations), Safety, Risk, Reliability and Quality (26 citations) and Instrumentation (6 citations). D. Roy has collaborated with scholars based in France, United States and Italy. Frequent co-authors include E. Vincent, V. Huard, A. Bravaix, G. Ghibaudo, X. Federspiel, Mustapha Rafik, Sylvie Bruyere, Frederic Monsieur, Chloe Guerin and G. Ribes. Their work appears in journals such as Microelectronics Reliability, Microelectronic Engineering, IEEE Transactions on Device and Materials Reliability, Micro and Nano Engineering and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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