D. Roy

1.2k citations
83 papers · 687 · h-index 14

Impact in

  • Electrical and Electronic Engineering top 5%
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
    • Silicon Carbide Semiconductor Technologies
    • Advanced Memory and Neural Computing
    • Electrostatic Discharge in Electronics
  • Electronic, Optical and Magnetic Materials
    • Copper Interconnects and Reliability

Papers in

  • Electrical and Electronic Engineering 80
    • Semiconductor materials and devices 80
    • Advancements in Semiconductor Devices and Circuit Design 56
    • Integrated Circuits and Semiconductor Failure Analysis 45
    • Ferroelectric and Negative Capacitance Devices 7
    • Silicon Carbide Semiconductor Technologies 4
    • Advanced Memory and Neural Computing 4
  • Electronic, Optical and Magnetic Materials 16
    • Copper Interconnects and Reliability 15
Co-authors
X. Federspiel (26 shared papers)G. Ghibaudo (23 shared papers)S. Bruyère (19 shared papers)M. Rafik (24 shared papers)F. Monsieur (16 shared papers)Emmanuel Vincent (11 shared papers)V. Huard (20 shared papers)G. Ribes (18 shared papers)
Journals
Microelectronics Reliability (7 papers)Microelectronic Engineering (5 papers)IEEE Transactions on Device and Materials Reliability (3 papers)SAE technical papers on CD-ROM/SAE technical paper series (2 papers)Solid-State Electronics (1 paper)
Partner nations
FranceSwitzerlandItaly

In The Last Decade

D. Roy

80 papers receiving 664 citations

Peers

D. Roy
Comparison fields: 5 of 31
  • Electrical and Electronic Engineering 668
  • Electronic, Optical and Magnetic Materials 95
  • Instrumentation 8
  • Hardware and Architecture 11
  • Atomic and Molecular Physics, and Optics 42
Replace H. Shibata with:
H. Shibata Japan
X. Federspiel France
T. Standaert United States
M. Kerber Germany
S. Bruyère France
L. Shi United States
R. Khamankar United States
Everett C. C. Yeh United States
D. Boyd United States
Dong Kyun Sohn South Korea
D. Roy relative to H. Shibata Japan H. Shibata's profile →
Citations per field
00.5×5×10×15×22×
H. Shibata · 1×
Citations per year

Countries citing papers authored by D. Roy

Since Specialization
Citations

This map shows the geographic impact of D. Roy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Roy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Roy more than expected).

Fields of papers citing papers by D. Roy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Roy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Roy. The network helps show where D. Roy may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Roy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Roy Line = papers co-authored together D. Roy links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 83 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
F. Monsieur, Emmanuel Vincent, D. Roy, S. Bruyère, J.C. Vildeuil, G. Pananakakis, G. Ghibaudo
200392
2
Microscopic scale characterization and modeling of transistor degradation under HC stress
Microelectronics Reliability ·Yoann Mamy Randriamihaja, V. Huard, X. Federspiel, Alban Zaka, Pierpaolo Palestri, D. Rideau, D. Roy, A. Bravaix
201241
3
Interaction between BTI and HCI degradation in High-K devices
X. Federspiel, M. Rafik, D. Angot, F. Cacho, D. Roy
201327
4
Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization
Microelectronic Engineering ·M. Vilmay, D. Roy, F. Volpi, Jean-Marc Chaix
200825
5
Energy-driven Hot-Carrier model in advanced nodes
W. Arfaoui, X. Federspiel, P. Mora, F. Monsieur, F. Cacho, D. Roy, A. Bravaix
201424
6
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
A. Bravaix, Yoann Mamy Randriamihaja, V. Huard, D. Angot, X. Federspiel, W. Arfaoui, P. Mora, F. Cacho, M. Saliva, C. Besset, S. Renard, D. Roy, Emmanuel Vincent
201324
7
28nm node bulk vs FDSOI reliability comparison
X. Federspiel, D. Angot, M. Rafik, F. Cacho, A. Bajolet, N. Planes, D. Roy, M. Haond, F. Arnaud
201224
8
Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests
Microelectronic Engineering ·Emmanuel Chery, X. Federspiel, D. Roy, F. Volpi, Jean-Marc Chaix
201323
9
Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node
A. Bravaix, C. Guérin, D. Goguenheim, V. Huard, D. Roy, C. Besset, S. Renard, Yoann Mamy Randriamihaja, Emmanuel Vincent
201020
10
Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
F. Monsieur, Emmanuel Vincent, G. Ribes, V. Huard, S. Bruyère, D. Roy, G. Pananakakis, G. Ghibaudo
200317
11
Reliability issues for nano-scale CMOS dielectrics
Microelectronic Engineering ·G. Ribes, M. Rafik, D. Roy
200716
12
Origin of Vt Instabilities in High-<tex>$k$</tex>Dielectrics Jahn–Teller Effect or Oxygen Vacancies
IEEE Transactions on Device and Materials Reliability ·G. Ribes, S. Bruyère, D. Roy, C. Parthasarthy, Markus Müller, M. Denais, V. Huard, T. Skotnicki, G. Ghibaudo
200615
13
New perspectives on NBTI in advanced technologies: modelling & characterization
M. Denais, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, D. Roy, A. Bravaix
200515
14
Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters
Institutional Research Information System (University of Udine) ·Yoann Mamy Randriamihaja, Alban Zaka, V. Huard, M. Rafik, D. Rideau, D. Roy
201215
15
Experimental analysis of defect nature and localization under hot-carrier and bias temperature damage in advanced CMOS nodes
W. Arfaoui, X. Federspiel, P. Mora, M. Rafik, D. Roy, A. Bravaix
201311
16
High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
G. Ribes, P. Mora, F. Monsieur, M. Rafik, F Guarin, Guanghua Yang, D. Roy, Wenhsin Chang, J. H. Stathis
201011
17
High-K dielectrics breakdown accurate lifetme assessment methodology
Q. Ribes, S. Bruyère, M. Denais, F. Monsieur, D. Roy, Emmanuel Vincent, Ghibaudo
200511
18
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions
Microelectronics Reliability ·F. Monsieur, Emmanuel Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo
200110
19
New Understanding on the Breakdown of High-K Dielectric Stacks using Multi-Vibrational Hydrogen Release Model
M. Rafik, G. Ribes, D. Roy, G. Ghibaudo
200710
20
Application of compact HCI model to prediction of process effect in 28FDSOI technology
W. Arfaoui, X. Federspiel, A. Bravaix, P. Mora, A. Cros, D. Roy
201410

About D. Roy

D. Roy is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 83 papers that have together received 687 indexed citations. Recurring topics across this work include Semiconductor materials and devices (80 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers), Integrated Circuits and Semiconductor Failure Analysis (45 papers), Copper Interconnects and Reliability (15 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Silicon Carbide Semiconductor Technologies (4 papers), Advanced Memory and Neural Computing (4 papers) and Electronic and Structural Properties of Oxides (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (668 citations), Electronic, Optical and Magnetic Materials (95 citations), Instrumentation (8 citations), Hardware and Architecture (11 citations) and Atomic and Molecular Physics, and Optics (42 citations). D. Roy has collaborated with scholars based in France, Switzerland and Italy. Frequent co-authors include X. Federspiel, G. Ghibaudo, S. Bruyère, M. Rafik, F. Monsieur, Emmanuel Vincent, V. Huard, G. Ribes, A. Bravaix and G. Pananakakis. Their work appears in journals such as Microelectronics Reliability, Microelectronic Engineering, IEEE Transactions on Device and Materials Reliability, SAE technical papers on CD-ROM/SAE technical paper series and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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