D. Rideau

1.3k citations

91 papers · 754 · h-index 13

Impact in

Instrumentation top 10%
Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 80
- Semiconductor materials and devices 57
- Advancements in Semiconductor Devices and Circuit Design 57
- Integrated Circuits and Semiconductor Failure Analysis 28
- Silicon Carbide Semiconductor Technologies 15
Atomic and Molecular Physics, and Optics 20
- Quantum and electron transport phenomena 6

Co-authors: H. Jaouen (30 shared papers)C. Tavernier (27 shared papers)Yann‐Michel Niquet (12 shared papers)Xavier Blase (2 shared papers)A. Ghetti (5 shared papers)M. Minondo (6 shared papers)L. Ciampolini (1 shared paper)Alban Zaka (11 shared papers)
Journals: Solid-State Electronics (13 papers)IEEE Transactions on Electron Devices (6 papers)Journal of Computational Electronics (2 papers)Physical Review B (2 papers)Physical Review Letters (2 papers)
Partner nations: France Switzerland United States

In The Last Decade

D. Rideau

82 papers receiving 741 citations

Peers

Countries citing papers authored by D. Rideau

Since Specialization

Citations

This map shows the geographic impact of D. Rideau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Rideau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Rideau more than expected).

Fields of papers citing papers by D. Rideau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Rideau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Rideau. The network helps show where D. Rideau may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Rideau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Rideau Line = papers co-authored together D. Rideau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys Physical Review B ·Yann‐Michel Niquet, D. Rideau, C. Tavernier, H. Jaouen, Xavier Blase	2009	133
2	Strained Si, Ge, andSi1−xGexalloys modeled with a first-principles-optimized full-zonek∙pmethod Physical Review B ·D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti	2006	107
3	Microscopic scale characterization and modeling of transistor degradation under HC stress Microelectronics Reliability ·Yoann Mamy Randriamihaja, V. Huard, X. Federspiel, Alban Zaka, Pierpaolo Palestri, D. Rideau, D. Roy, A. Bravaix	2012	41
4	Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches Journal of Applied Physics ·Yann‐Michel Niquet, Việt Hùng Nguyễn, François Triozon, Ivan Duchemin, Olivier Nier, D. Rideau	2014	37
5	Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in $\langle \hbox{001}\rangle$-, $\langle \hbox{110}\rangle$-, and $\langle \hbox{111}\rangle$ -Oriented Si Nanowires IEEE Transactions on Electron Devices ·Yann‐Michel Niquet, Christophe Delerue, D. Rideau, Brice Videau	2012	34
6	Motional Ordering of a Charge-Density Wave in the Sliding State Physical Review Letters ·R. Danneau, A. Ayari, D. Rideau, H. Requardt, J. E. Lorenzo, L. Ortéga, P. Monceau, R. Currat, G. Grübel	2002	27
7	Quantum Modeling of the Carrier Mobility in FDSOI Devices IEEE Transactions on Electron Devices ·Việt Hùng Nguyễn, Yann‐Michel Niquet, François Triozon, Ivan Duchemin, Olivier Nier, D. Rideau	2014	19
8	Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs IEEE Transactions on Nanotechnology ·A. Ghetti, G.P. Carnevale, D. Rideau	2007	19
9	X-ray scattering evidence for macroscopic strong pinning centers in the sliding CDW state of NbSe ₃ Europhysics Letters (EPL) ·D. Rideau, P. Monceau, R. Currat, H. Requardt, F. Ya. Nad, J. E. Lorenzo, S. Brazovskiǐ, C. Detlefs, G. Grübel	2001	18
10	On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Solid-State Electronics ·D. Rideau, M. Feraille, M. Michaillat, Yann‐Michel Niquet, C. Tavernier, H. Jaouen	2009	17
11	On the accuracy of current TCAD hot carrier injection models in nanoscale devices Solid-State Electronics ·Alban Zaka, Quentin Rafhay, Matteo Iellina, Pierpaolo Palestri, R. Clerc, D. Rideau, Davide Garetto, E. Dornel, J. Singer, G. Pananakakis, C. Tavernier, H. Jaouen	2010	16
12	Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters Institutional Research Information System (University of Udine) ·Yoann Mamy Randriamihaja, Alban Zaka, V. Huard, M. Rafik, D. Rideau, D. Roy	2012	15
13	Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET] D. Rideau, A. Dray, Fabien Gilibert, Francois Agut, L. Giguerre, G. Gouget, M. Minondo, A. Juge	2004	15
14	Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model Solid-State Electronics ·Davide Garetto, Yoann Mamy Randriamihaja, Alban Zaka, D. Rideau, Alexandre Schmid, H. Jaouen, Yusuf Leblebici	2011	12
15	Quenching Statistics of Silicon Single Photon Avalanche Diodes IEEE Journal of the Electron Devices Society ·Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Rémi Helleboid, Jérémy Grebot, D. Rideau, Philippe Dollfus	2021	10
16	Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects IEEE Transactions on Electron Devices ·Davide Garetto, Yoann Mamy Randriamihaja, D. Rideau, Alban Zaka, Alexandre Schmid, Yusuf Leblebici, H. Jaouen	2012	9
17	Series resistance estimation and C(V) measurements on ultra thin oxide MOS capacitors D. Rideau, P. Scheer, D. Roy, G. Gouget, M. Minondo, A. Juge	2003	9
18	Experimental ${g}_{m}/{I}_{{D}}$ Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET IEEE Transactions on Electron Devices ·Salim El Ghouli, D. Rideau, F. Monsieur, P. Scheer, G. Gouget, A. Juge, T. Poiroux, Jean-Michel Sallèse, Christophe Lallement	2017	9
19	Design of integrated capacitive modulators for 56Gbps operation Maurin Douix, Delphine Marris‐Morini, Charles Baudot, S. Crémer, D. Rideau, Diego Pérez‐Galacho, A. Souhaité, Romuald Blanc, E. Batail, Nathalie Vulliet, Laurent Vivien, Éric Cassan, F. Bœuf	2016	9
20	Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices IEEE Journal of the Electron Devices Society ·Rémi Helleboid, D. Rideau, Jérémy Grebot, Isobel Nicholson, Norbert Moussy, O. Saxod, M. Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, C. Buj, Guillaume Marchand, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus	2022	7

About D. Rideau

D. Rideau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Instrumentation, Biophysics and Electronic, Optical and Magnetic Materials, having authored 91 papers that have together received 754 indexed citations. Recurring topics across this work include Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (57 papers), Integrated Circuits and Semiconductor Failure Analysis (28 papers), Silicon Carbide Semiconductor Technologies (15 papers), Advanced Optical Sensing Technologies (15 papers), Advanced Fluorescence Microscopy Techniques (8 papers), Organic and Molecular Conductors Research (6 papers) and Quantum and electron transport phenomena (6 papers). The work is most often cited by research in Instrumentation (51 citations), Electrical and Electronic Engineering (604 citations), Atomic and Molecular Physics, and Optics (240 citations), Biophysics (29 citations) and Condensed Matter Physics (53 citations). D. Rideau has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include H. Jaouen, C. Tavernier, Yann‐Michel Niquet, Xavier Blase, A. Ghetti, M. Minondo, L. Ciampolini, Alban Zaka, D. Roy and François Triozon. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Journal of Computational Electronics, Physical Review B and Physical Review Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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