I.-C. Chen

410 citations

22 papers · 266 · h-index 9

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Low-power high-performance VLSI design
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 18
- Integrated Circuits and Semiconductor Failure Analysis 5
- Ferroelectric and Negative Capacitance Devices 3
- Silicon Carbide Semiconductor Technologies 2
- Low-power high-performance VLSI design 2
Electronic, Optical and Magnetic Materials 3
- Copper Interconnects and Reliability 3

Co-authors: Donald J. Coleman (3 shared papers)Akitoshi Nishimura Akitoshi Nishimura (1 shared paper)Mark S. Rodder (7 shared papers)H. L. Tigelaar (2 shared papers)Shian Aur (2 shared papers)Amitava Chatterjee (7 shared papers)H.-J. Wann (1 shared paper)Bo Shen (1 shared paper)
Journals: IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (1 paper)Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (1 paper)
Partner nations: United States Taiwan

In The Last Decade

I.-C. Chen

20 papers receiving 249 citations

Peers

Countries citing papers authored by I.-C. Chen

Since Specialization

Citations

This map shows the geographic impact of I.-C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.-C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.-C. Chen more than expected).

Fields of papers citing papers by I.-C. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.-C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.-C. Chen. The network helps show where I.-C. Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside I.-C. Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I.-C. Chen Line = papers co-authored together I.-C. Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Interface trap-enhanced gate-induced leakage current in MOSFET IEEE Electron Device Letters ·I.-C. Chen, C.W. Teng, Donald J. Coleman, Akitoshi Nishimura Akitoshi Nishimura	1989	86
2	Physical oxide thickness extraction and verification using quantum mechanical simulation C.M. Bowen, Chenjing L. Fernando, Gerhard Klimeck, Amitava Chatterjee, Daniel K. Blanks, Roger K. Lake, Jerry C. Y. Hu, Joseph G. Davis	2002	27
3	Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Amitava Chatterjee, Inayat Ali, Keith A. Joyner, Doug Mercer, John Kuehne, Mark E. Mason, A. L. Esquivel, Daty Rogers	1997	22
4	Effects of poly depletion on the estimate of thin dielectric lifetime IEEE Electron Device Letters ·S.J. Wang, I.-C. Chen, H. L. Tigelaar	1991	21
5	Gate current injection initiated by electron band-to-band tunneling in MOS devices IEEE Electron Device Letters ·I.-C. Chen, Donald J. Coleman, C.W. Teng	1989	16
6	A scaled 1.8 V, 0.18 μm gate length CMOS technology: device design and reliability considerations Mark S. Rodder, Shian Aur, I.-C. Chen	2002	14
7	A high quality high temperature compatible Tantalum oxide film for advanced dRAM applications Bo Shen, I.-C. Chen, Sourav Banerjee, George Gardner Brown, J. G. Bohlman, P.-H. Chang, Robert R. Doering	1987	12
8	A shallow trench isolation study for 0.25/0.18 μm CMOS technologies and beyond Amitava Chatterjee, J. Esquivel, Soumya Shubhra Nag, Inayat Ali, Daty Rogers, Kelly Taylor, Keith A. Joyner, Mark E. Mason	2002	11
9	Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide IEEE Electron Device Letters ·I.-C. Chen, Mark S. Rodder, H.-J. Wann, D. B. Spratt	1994	10
10	High performance sub-half micron CMOS using rapid thermal processing Richard Alexander Chapman, John Kuehne, P.S.-H. Ying, W.F. Richardson, A.R. Paterson, Andrew P. Lane, I.-C. Chen, L. Velo	2002	8
11	A quantitative physical model for the band-to-band tunneling-induced substrate hot electron injection in MOS devices IEEE Transactions on Electron Devices ·I.-C. Chen, C.W. Teng	1992	8
12	TDDB on poly-gate single doping type capacitors S.-J. Wang, I.-C. Chen, H. L. Tigelaar	1992	7
13	Simple gate-to-drain overlapped MOSFETs using poly spacers for high immunity to channel hot-electron degradation IEEE Electron Device Letters ·I.-C. Chen, C.C. Wei, C.W. Teng	1990	6
14	Pass transistor designs using pocket implant to improve manufacturability for 256 Mbit DRAM and beyond Amitava Chatterjee, J. Liu, Shian Aur, P.K. Mozumder, Mark S. Rodder, I.-C. Chen	2002	5
15	A physical model for the gate current injection in p-channel MOSFET's IEEE Electron Device Letters ·I.-C. Chen, S.J. Wang	1993	4
16	A pass transistor design methodology for 256 Mbit DRAM and beyond Amitava Chatterjee, J. Liu, P.K. Mozumder, Mark S. Rodder, I.-C. Chen	2002	3
17	A device design study of 0.25 μm gate length CMOS for 1 V low power applications Mahalingam Nandakumar, Amitava Chatterjee, Mark S. Rodder, I.-C. Chen	2002	2
18	The design of analog front-end circuitry for 1x HD-DVD PRML read channel Sheng-Jang Lin, I.-C. Chen, Bo‐Wei Chen, Feng-Hsiang Lo	2006	1
19	Degradation of deep sub-micron isolation by vacuum ultraviolet radiation from low temperature back end plasma-assisted processes Stan Ashburn, Srikanth Krishnan, Girish A. Dixit, Mark S. Rodder, Kelly Taylor, Terence Breedijk, I.-C. Chen, M. W. Goodwin	2002	1
20	A comparative study of LOCOS-type isolations for 256 Mbit DRAM I.-C. Chen, Mark S. Rodder, Jeong‐Mo Hwang	2002	1

About I.-C. Chen

I.-C. Chen is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Biomedical Engineering, Hardware and Architecture and Materials Chemistry, having authored 22 papers that have together received 266 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Copper Interconnects and Reliability (3 papers), Analog and Mixed-Signal Circuit Design (3 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Silicon Carbide Semiconductor Technologies (2 papers) and Low-power high-performance VLSI design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (251 citations), Atomic and Molecular Physics, and Optics (32 citations), Electronic, Optical and Magnetic Materials (14 citations), Materials Chemistry (30 citations) and Biomedical Engineering (26 citations). I.-C. Chen has collaborated with scholars based in United States and Taiwan. Frequent co-authors include Donald J. Coleman, Akitoshi Nishimura Akitoshi Nishimura, Mark S. Rodder, H. L. Tigelaar, Shian Aur, Amitava Chatterjee, H.-J. Wann, Bo Shen, Kelly Taylor and Gerhard Klimeck. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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I.-C. Chen

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I.-C. Chen

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