B.P. Linder

2.8k citations

84 papers · 1.8k · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 81
- Semiconductor materials and devices 75
- Advancements in Semiconductor Devices and Circuit Design 60
- Integrated Circuits and Semiconductor Failure Analysis 37
- Ferroelectric and Negative Capacitance Devices 19
- Silicon Carbide Semiconductor Technologies 6
- Plasma Diagnostics and Applications 4
Electronic, Optical and Magnetic Materials 13
- Copper Interconnects and Reliability 13

Co-authors: J. H. Stathis (34 shared papers)S. Lombardo (8 shared papers)K. L. Pey (2 shared papers)Chih Hang Tung (1 shared paper)Félix Palumbo (2 shared papers)E. Cartier (23 shared papers)Vijay Narayanan (24 shared papers)R. Rodrı́guez (5 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Microelectronic Engineering (5 papers)Microelectronics Reliability (3 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States Spain Italy

In The Last Decade

B.P. Linder

82 papers receiving 1.8k citations

Peers

Countries citing papers authored by B.P. Linder

Since Specialization

Citations

This map shows the geographic impact of B.P. Linder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.P. Linder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.P. Linder more than expected).

Fields of papers citing papers by B.P. Linder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.P. Linder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.P. Linder. The network helps show where B.P. Linder may publish in the future.

Co-authors

The 25 scholars most cited alongside B.P. Linder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B.P. Linder Line = papers co-authored together B.P. Linder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 84 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Dielectric breakdown mechanisms in gate oxides Journal of Applied Physics ·S. Lombardo, J. H. Stathis, B.P. Linder, K. L. Pey, Félix Palumbo, Chih Hang Tung	2005	355
2	The impact of gate-oxide breakdown on SRAM stability IEEE Electron Device Letters ·R. Rodrı́guez, J. H. Stathis, B.P. Linder, S. P. Kowalczyk, C.T. Chuang, (unknown), Gregory A. Northrop, K. Bernstein, A.J. Bhavnagarwala, S. Lombardo	2002	99
3	Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics IEEE Electron Device Letters ·B.P. Linder, S. Lombardo, J. H. Stathis, A. Vayshenker, D.J. Frank	2002	92
4	Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers Applied Physics Letters ·Supratik Guha, Vamsi Paruchuri, M. Copel, Vijay Narayanan, Y. Y. Wang, Philip E. Batson, N. A. Bojarczuk, B.P. Linder, B. Doris	2007	80
5	A model for gate-oxide breakdown in CMOS inverters IEEE Electron Device Letters ·R. Rodrı́guez, J. H. Stathis, B.P. Linder	2003	75
6	Fundamental aspects of HfO ₂ -based high-k metal gate stack reliability and implications on t _inv -scaling E. Cartier, A. Kerber, Takashi Ando, Martin M. Frank, Kwang‐Il Choi, Siddarth Krishnan, B.P. Linder, Kai Zhao, F. Monsieur, J. H. Stathis, Vijay Narayanan	2011	66
7	Gate oxide breakdown under Current Limited Constant Voltage Stress B.P. Linder, J. H. Stathis, R. Wachnik, Ernest Y. Wu, S. A. Cohen, Abhishek Ray, A. Vayshenker	2002	66
8	Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack E. Cartier, B.P. Linder, Vijay Narayanan, Vamsi Paruchuri	2006	64
9	Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/ E. Cartier, F. R. McFeely, Vijay Narayanan, P. Jamison, B.P. Linder, M. Copel, Vamsi Paruchuri, Veeraraghavan Basker, Richard Haight, Dong Woo Lim, R. Carruthers, T. M. Shaw, M. Steen, J.W. Sleight, J. Germán Rubino, Hariklia Deligianni, Supratik Guha, R. Jammy, G. Shahidi	2005	52
10	Growth and scaling of oxide conduction after breakdown B.P. Linder, J. H. Stathis, D.J. Frank, S. Lombardo, A. Vayshenker	2003	49
11	Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters R. Rodrı́guez, J. H. Stathis, B.P. Linder	2003	45
12	Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate Physical Review Letters ·S. Lombardo, J. H. Stathis, B.P. Linder	2003	44
13	PBTI under dynamic stress: From a single defect point of view Kai Zhao, J. H. Stathis, B.P. Linder, E. Cartier, A. Kerber	2011	36
14	TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates A. Kerber, E. Cartier, B.P. Linder, Siddarth Krishnan, T. Nigam	2009	35
15	Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO/sub 2//metal stacks IEEE Electron Device Letters ·Vijay Narayanan, K. Maitra, B.P. Linder, Vamsi Paruchuri, E. P. Gusev, P. Jamison, Martin M. Frank, M. Steen, D. La Tulipe, John Arnold, R. Carruthers, D. Lacey, E. Cartier	2006	35
16	Plasma immersion ion implantation with dielectric substrates IEEE Transactions on Plasma Science ·B.P. Linder, N.W. Cheung	1996	35
17	Dual workfunction fully silicided metal gates C. Cabral, J. Kedzierski, B.P. Linder, Sufi Zafar, Vijay Narayanan, S. Fang, An Steegen, P. Kozlowski, R. Carruthers, R. Jammy	2004	32
18	Statistics of progressive breakdown in ultra-thin oxides Microelectronic Engineering ·B.P. Linder, J. H. Stathis	2004	32
19	Reliability challenges for the 10nm node and beyond J. H. Stathis, M. Wang, Richard G. Southwick, Ernest Y. Wu, B.P. Linder, E. Liniger, Griselda Bonilla, H. Kothari	2014	28
20	Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements Franco Stellari, K.A. Jenkins, Alan J. Weger, B.P. Linder, Peilin Song	2015	27

About B.P. Linder

B.P. Linder is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 84 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (75 papers), Advancements in Semiconductor Devices and Circuit Design (60 papers), Integrated Circuits and Semiconductor Failure Analysis (37 papers), Ferroelectric and Negative Capacitance Devices (19 papers), Copper Interconnects and Reliability (13 papers), Metal and Thin Film Mechanics (7 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Plasma Diagnostics and Applications (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Hardware and Architecture (52 citations), Electronic, Optical and Magnetic Materials (120 citations), Materials Chemistry (249 citations) and Atomic and Molecular Physics, and Optics (146 citations). B.P. Linder has collaborated with scholars based in United States, Spain and Italy. Frequent co-authors include J. H. Stathis, S. Lombardo, K. L. Pey, Chih Hang Tung, Félix Palumbo, E. Cartier, Vijay Narayanan, R. Rodrı́guez, A. Vayshenker and N.W. Cheung. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, Microelectronics Reliability, Applied Physics Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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