A. E. Nikolaev

1.4k citations

108 papers · 1.1k · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 103
- GaN-based semiconductor devices and materials 103
Electrical and Electronic Engineering 58
- Semiconductor materials and devices 29
- Silicon Carbide Semiconductor Technologies 16

Co-authors: W. V. Lundin (58 shared papers)V. Dmitriev (21 shared papers)Yu. Melnik (16 shared papers)A. F. Tsatsul’nikov (59 shared papers)И.П. Никитина (15 shared papers)A. V. Sakharov (49 shared papers)E. E. Zavarin (34 shared papers)N.I. Kuznetsov (8 shared papers)
Journals: Journal of Crystal Growth (8 papers)Solid-State Electronics (5 papers)Journal of Applied Physics (4 papers)Applied Physics Letters (2 papers)Diamond and Related Materials (2 papers)
Partner nations: Russia France United States

In The Last Decade

A. E. Nikolaev

101 papers receiving 1.1k citations

Peers

Countries citing papers authored by A. E. Nikolaev

Since Specialization

Citations

This map shows the geographic impact of A. E. Nikolaev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Nikolaev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Nikolaev more than expected).

Fields of papers citing papers by A. E. Nikolaev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Nikolaev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Nikolaev. The network helps show where A. E. Nikolaev may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Nikolaev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Nikolaev Line = papers co-authored together A. E. Nikolaev links everyone, so they are left out of the graph.

All Works

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#	Work
1	Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys Physical review. B, Condensed matter ·V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, Hisatomo Harima	2002	150
2	Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates Applied Physics Letters ·N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, Yu. Melnik, V. Dmitriev	1999	55
3	Hydrogen effects in III-nitride MOVPE Journal of Crystal Growth ·E.V. Yakovlev, Р.А. Талалаев, A.S. Segal, A.V. Lobanova, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. F. Tsatsul’nikov, A. E. Nikolaev	2008	45
4	X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy Journal of Applied Physics ·Viktor S. Kopp, Vladimir M. Kaganer, М. В. Байдакова, W. V. Lundin, A. E. Nikolaev, Elena V. Verkhovtceva, M. A. Yagovkina, N. Cherkashin	2014	37
5	Fermi level dependence of hydrogen diffusivity in GaN Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, A. S. Usikov, И.П. Никитина	2001	36
6	Properties of Free-Standing GaN Bulk Crystals Grown by HVPE MRS Proceedings ·Yu. Melnik, A. E. Nikolaev, И.П. Никитина, Konstantin Vassilevski, V. Dmitriev	1997	30
7	Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, А. Л. Закгейм, A. E. Cherniakov, N. Cherkashin, Martin Hÿtch, E.V. Yakovlev, D.S. Bazarevskiy, M. M. Rozhavskaya, A. F. Tsatsul’nikov	2010	30
8	Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy Surface Science ·C. T. Foxon, T.S. Cheng, С. В. Новиков, N.J. Jeffs, O. H. Hughes, Yu. Melnik, A. E. Nikolaev, V. A. Dmitriev	1999	29
9	High-Temperature Hardness of Bulk Single-Crystal AlN Japanese Journal of Applied Physics ·Ichiro Yonenaga, A. E. Nikolaev, Yuriy Melnik, Vladimir Dmitriev	2001	27
10	Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates Journal of Applied Physics ·A. Y. Polyakov, В. И. Николаев, С. А. Тарелкин, А. И. Печников, S. I. Stepanov, A. E. Nikolaev, Ivan Shchemerov, E. B. Yakimov, Nikolay V. Luparev, М. С. Кузнецов, A.A. Vasil'ev, А. I. Kochkova, M. I. Voronova, M. P. Scheglov, Jihyun Kim, S. J. Pearton	2021	25
11	Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC IEEE Transactions on Electron Devices ·Erik Danielsson, Carl‐Mikael Zetterling, Mikael Östling, A. E. Nikolaev, И.П. Никитина, V. Dmitriev	2001	22
12	Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE physica status solidi (a) ·M. Albrecht, И.П. Никитина, A. E. Nikolaev, Yu. Melnik, V. A. Dmitriev, H. P. Strunk	1999	20
13	Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov	2011	20
14	High growth rate MOVPE of Al(Ga)N in planetary reactor Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, M. A. Yagovkina, P. N. Brunkov, M. M. Rozhavskaya, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul’nikov, A.V. Lobanova, Р.А. Талалаев	2011	20
15	Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy Diamond and Related Materials ·Yu. Melnik, И.П. Никитина, A. E. Nikolaev, V. Dmitriev	1997	19
16	Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Journal of Applied Physics ·Enrico Di Russo, N. Cherkashin, M. Korytov, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, Bastien Bonef, Ivan Blum, Jonathan Houard, G. Da Costa, D. Blavette, Lorenzo Rigutti	2019	18
17	Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes Nanotechnology ·Daniele Barettin, Matthias Auf der Maur, Aldo Di Carlo, Alessandro Pecchia, A. F. Tsatsul’nikov, W. V. Lundin, Alexei V. Sakharov, A. E. Nikolaev, M. Korytov, N. Cherkashin, Martin Hÿtch, S. Yu. Karpov	2017	18
18	Electrical characteristics of GaN/6H-SiC n-p heterojunctions Materials Science and Engineering B ·N.I. Kuznetsov, A.E. Gubenco, A. E. Nikolaev, Yu. Melnik, M.N. Blashenkov, I. P. Nikitina, V. Dmitriev	1997	18
19	High breakdown M–I–M structures on bulk AlN Solid-State Electronics ·B. Luo, J. W. Johnson, O. Kryliouk, F. Ren, S. J. Pearton, S. N. G. Chu, A. E. Nikolaev, Yu. Melnik, V. A. Dmitriev, Timothy J. Anderson	2002	18
20	Properties of Si-Doped GaN Layers Grown by HVPE physica status solidi (a) ·А. В. Фомин, A. E. Nikolaev, И.П. Никитина, A. S. Zubrilov, M. G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D. Tsvetkov	2001	17

About A. E. Nikolaev

A. E. Nikolaev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 108 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (103 papers), Ga2O3 and related materials (38 papers), Semiconductor materials and devices (29 papers), ZnO doping and properties (28 papers), Metal and Thin Film Mechanics (25 papers), Semiconductor Quantum Structures and Devices (25 papers), Silicon Carbide Semiconductor Technologies (16 papers) and Photocathodes and Microchannel Plates (13 papers). The work is most often cited by research in Condensed Matter Physics (945 citations), Electronic, Optical and Magnetic Materials (432 citations), Materials Chemistry (488 citations), Atomic and Molecular Physics, and Optics (299 citations) and Mechanics of Materials (240 citations). A. E. Nikolaev has collaborated with scholars based in Russia, France and United States. Frequent co-authors include W. V. Lundin, V. Dmitriev, Yu. Melnik, A. F. Tsatsul’nikov, И.П. Никитина, A. V. Sakharov, E. E. Zavarin, N.I. Kuznetsov, A. S. Zubrilov and N. Cherkashin. Their work appears in journals such as Journal of Crystal Growth, Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters and Diamond and Related Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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