A. E. Nikolaev

1.3k citations

107 papers · 1.1k · h-index 18

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 102
- GaN-based semiconductor devices and materials 102
Electrical and Electronic Engineering 57
- Semiconductor materials and devices 28
- Silicon Carbide Semiconductor Technologies 16

Co-authors: W. V. Lundin (58 shared papers)V. Dmitriev (21 shared papers)A. F. Tsatsul’nikov (59 shared papers)Yu. Melnik (16 shared papers)И.П. Никитина (15 shared papers)A. V. Sakharov (48 shared papers)E. E. Zavarin (34 shared papers)N.I. Kuznetsov (8 shared papers)
Journals: Journal of Crystal Growth (8 papers)Solid-State Electronics (5 papers)Journal of Applied Physics (4 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)Nanomaterials (2 papers)
Partner nations: Russia United States France

In The Last Decade

A. E. Nikolaev

99 papers receiving 1.0k citations

Peers

Countries citing papers authored by A. E. Nikolaev

Since Specialization

Citations

This map shows the geographic impact of A. E. Nikolaev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Nikolaev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Nikolaev more than expected).

Fields of papers citing papers by A. E. Nikolaev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Nikolaev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Nikolaev. The network helps show where A. E. Nikolaev may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Nikolaev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Nikolaev Line = papers co-authored together A. E. Nikolaev links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 107 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys Physical review. B, Condensed matter ·V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, Hisatomo Harima	2002	148
2	Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates Applied Physics Letters ·N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, Yu. Melnik, V. Dmitriev	1999	53
3	Hydrogen effects in III-nitride MOVPE Journal of Crystal Growth ·E.V. Yakovlev, Р.А. Талалаев, A.S. Segal, A.V. Lobanova, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. F. Tsatsul’nikov, A. E. Nikolaev	2008	45
4	X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy Journal of Applied Physics ·Viktor S. Kopp, Vladimir M. Kaganer, М. В. Байдакова, W. V. Lundin, A. E. Nikolaev, Elena V. Verkhovtceva, M. A. Yagovkina, N. Cherkashin	2014	36
5	Fermi level dependence of hydrogen diffusivity in GaN Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, A. S. Usikov, И.П. Никитина	2001	34
6	Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy Surface Science ·C. T. Foxon, T.S. Cheng, С. В. Новиков, N.J. Jeffs, O. H. Hughes, Yu. Melnik, A. E. Nikolaev, V. A. Dmitriev	1999	29
7	Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, А. Л. Закгейм, A. E. Cherniakov, N. Cherkashin, Martin Hÿtch, E.V. Yakovlev, D.S. Bazarevskiy, M. M. Rozhavskaya, A. F. Tsatsul’nikov	2010	28
8	High-Temperature Hardness of Bulk Single-Crystal AlN Japanese Journal of Applied Physics ·Ichiro Yonenaga, A. E. Nikolaev, Yuriy Melnik, Vladimir Dmitriev	2001	27
9	Properties of Free-Standing GaN Bulk Crystals Grown by HVPE MRS Proceedings ·Yu. Melnik, A. E. Nikolaev, И.П. Никитина, Konstantin Vassilevski, V. Dmitriev	1997	26
10	Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates Journal of Applied Physics ·A. Y. Polyakov, В. И. Николаев, С. А. Тарелкин, А. И. Печников, S. I. Stepanov, A. E. Nikolaev, Ivan Shchemerov, E. B. Yakimov, Nikolay V. Luparev, М. С. Кузнецов, A.A. Vasil'ev, А. I. Kochkova, M. I. Voronova, M. P. Scheglov, Jihyun Kim, S. J. Pearton	2021	23
11	High growth rate MOVPE of Al(Ga)N in planetary reactor Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, M. A. Yagovkina, P. N. Brunkov, M. M. Rozhavskaya, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul’nikov, A.V. Lobanova, Р.А. Талалаев	2011	20
12	Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC IEEE Transactions on Electron Devices ·Erik Danielsson, Carl‐Mikael Zetterling, Mikael Östling, A. E. Nikolaev, И.П. Никитина, V. Dmitriev	2001	20
13	Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov	2011	20
14	Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy Diamond and Related Materials ·Yu. Melnik, И.П. Никитина, A. E. Nikolaev, V. Dmitriev	1997	19
15	Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Journal of Applied Physics ·Enrico Di Russo, N. Cherkashin, M. Korytov, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, Bastien Bonef, Ivan Blum, Jonathan Houard, G. Da Costa, D. Blavette, Lorenzo Rigutti	2019	18
16	Electrical characteristics of GaN/6H-SiC n-p heterojunctions Materials Science and Engineering B ·N.I. Kuznetsov, A.E. Gubenco, A. E. Nikolaev, Yu. Melnik, M.N. Blashenkov, I. P. Nikitina, V. Dmitriev	1997	18
17	Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes Nanotechnology ·Daniele Barettin, Matthias Auf der Maur, Aldo Di Carlo, Alessandro Pecchia, A. F. Tsatsul’nikov, W. V. Lundin, Alexei V. Sakharov, A. E. Nikolaev, M. Korytov, N. Cherkashin, Martin Hÿtch, S. Yu. Karpov	2017	17
18	Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE physica status solidi (a) ·M. Albrecht, И.П. Никитина, A. E. Nikolaev, Yu. Melnik, V. A. Dmitriev, H. P. Strunk	1999	17
19	AlN substrates: fabrication via vapor phase growth and characterization physica status solidi (a) ·Yu. Melnik, V. Soukhoveev, V. Ivantsov, V. E. Sizov, А. И. Печников, K.V. Tsvetkov, O. V. Kovalenkov, V. Dmitriev, A. E. Nikolaev, N.I. Kuznetsov, E. F. da Silveira, Jaime A. Freitas	2003	16
20	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, A. E. Nikolaev, И.П. Никитина, N.I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	16

About A. E. Nikolaev

A. E. Nikolaev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 107 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (28 papers), Semiconductor materials and devices (28 papers), Semiconductor Quantum Structures and Devices (25 papers), Metal and Thin Film Mechanics (25 papers), Silicon Carbide Semiconductor Technologies (16 papers) and Photocathodes and Microchannel Plates (13 papers). The work is most often cited by research in Condensed Matter Physics (900 citations), Electronic, Optical and Magnetic Materials (423 citations), Materials Chemistry (460 citations), Mechanics of Materials (233 citations) and Atomic and Molecular Physics, and Optics (266 citations). A. E. Nikolaev has collaborated with scholars based in Russia, United States and France. Frequent co-authors include W. V. Lundin, V. Dmitriev, A. F. Tsatsul’nikov, Yu. Melnik, И.П. Никитина, A. V. Sakharov, E. E. Zavarin, N.I. Kuznetsov, A. S. Zubrilov and N. Cherkashin. Their work appears in journals such as Journal of Crystal Growth, Solid-State Electronics, Journal of Applied Physics, MRS Internet Journal of Nitride Semiconductor Research and Nanomaterials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

A. E. Nikolaev

Impact in

Papers in i

In The Last Decade

A. E. Nikolaev

Peers

Countries citing papers authored by A. E. Nikolaev

Fields of papers citing papers by A. E. Nikolaev

All Works

About A. E. Nikolaev

Explore authors with similar magnitude of impact

Papers in