И.П. Никитина

1.3k citations

57 papers · 1.0k · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 35
- Silicon Carbide Semiconductor Technologies 25
- Semiconductor materials and devices 10
- Thin-Film Transistor Technologies 8
Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 26

Co-authors: Konstantin Vassilevski (10 shared papers)V. Dmitriev (20 shared papers)V. Yu. Davydov (4 shared papers)A. N. Smirnov (5 shared papers)D. K. Nelson (1 shared paper)N. S. Averkiev (1 shared paper)M. A. Jacobson (1 shared paper)O. Semchinova (1 shared paper)
Journals: Materials Science and Engineering B (3 papers)Journal of Crystal Growth (3 papers)Solid-State Electronics (3 papers)Semiconductor Science and Technology (2 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)
Partner nations: Russia United States Ukraine

In The Last Decade

И.П. Никитина

51 papers receiving 1.0k citations

Peers

Countries citing papers authored by И.П. Никитина

Since Specialization

Citations

This map shows the geographic impact of И.П. Никитина's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by И.П. Никитина with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites И.П. Никитина more than expected).

Fields of papers citing papers by И.П. Никитина

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by И.П. Никитина. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by И.П. Никитина. The network helps show where И.П. Никитина may publish in the future.

Co-authors

The 25 scholars most cited alongside И.П. Никитина, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with И.П. Никитина Line = papers co-authored together И.П. Никитина links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 57 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC Journal of Applied Physics ·V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, И.П. Никитина, Anatoli Polkovnikov, A. N. Smirnov, M. A. Jacobson, O. Semchinova	1997	312
2	Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide Journal of Applied Physics ·И.П. Никитина, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall, A.G. O’Neill, C. Mark Johnson	2005	122
3	Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy Materials Science in Semiconductor Processing ·В. И. Николаев, А. И. Печников, С. И. Степанов, И.П. Никитина, A. N. Smirnov, A. V. Chikiryaka, S.S. Sharofidinov, V.E. Bougrov, А. Е. Романов	2016	56
4	Growth and characterization of β-Ga2O3 crystals Journal of Crystal Growth ·В. И. Николаев, V. N. Maslov, С. И. Степанов, А. И. Печников, V. M. Krymov, И.П. Никитина, L. I. Guzilova, V.E. Bougrov, А. Е. Романов	2016	52
5	Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing Semiconductor Science and Technology ·Konstantin Vassilevski, Nicolas G. Wright, И.П. Никитина, Alton B. Horsfall, A.G. O’Neill, Michael J. Uren, K.P. Hilton, A. Masterton, A.J. Hydes, C. Mark Johnson	2005	49
6	Physical Properties of Bulk GaN Crystals Grown by HVPE MRS Internet Journal of Nitride Semiconductor Research ·Yu. Melnik, Konstantin Vassilevski, И.П. Никитина, A.I. Babanin, V. Yu. Davydov, V. Dmitriev	1997	46
7	Fermi level dependence of hydrogen diffusivity in GaN Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, S. J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V. A. Dmitriev, A. E. Nikolaev, A. S. Usikov, И.П. Никитина	2001	35
8	Device processing and characterisation of high temperature silicon carbide Schottky diodes Microelectronic Engineering ·Konstantin Vassilevski, И.П. Никитина, Nicolas G. Wright, Alton B. Horsfall, A.G. O’Neill, C. Mark Johnson	2005	28
9	Properties of Free-Standing GaN Bulk Crystals Grown by HVPE MRS Proceedings ·Yu. Melnik, A. E. Nikolaev, И.П. Никитина, Konstantin Vassilevski, V. Dmitriev	1997	26
10	Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy Journal of Electronic Materials ·S. Rendakova, И.П. Никитина, A. S. Tregubova, V. Dmitriev	1998	26
11	Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC Semiconductor Science and Technology ·И.П. Никитина, Konstantin Vassilevski, Alton B. Horsfall, Nicolas G. Wright, A.G. O’Neill, S. K. Ray, Konstantinos Zekentes, C. Mark Johnson	2009	22
12	Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy physica status solidi (a) ·Yu. Melnik, D. Tsvetkov, А. И. Печников, И.П. Никитина, N.I. Kuznetsov, V. Dmitriev	2001	21
13	Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC IEEE Transactions on Electron Devices ·Erik Danielsson, Carl‐Mikael Zetterling, Mikael Östling, A. E. Nikolaev, И.П. Никитина, V. Dmitriev	2001	21
14	Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy Diamond and Related Materials ·Yu. Melnik, И.П. Никитина, A. E. Nikolaev, V. Dmitriev	1997	19
15	Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE physica status solidi (a) ·M. Albrecht, И.П. Никитина, A. E. Nikolaev, Yu. Melnik, V. A. Dmitriev, H. P. Strunk	1999	17
16	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, A. E. Nikolaev, И.П. Никитина, N.I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	16
17	Residual strains in GaN grown on 6H-SiC Diamond and Related Materials ·И.П. Никитина, M.P. Sheglov, Yu. Melnik, K. G. Irvine, V. Dmitriev	1997	15
18	Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Solid-State Electronics ·A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. E. Nikolaev, И.П. Никитина, V. Dmitriev	2001	15
19	Properties of Si-Doped GaN Layers Grown by HVPE physica status solidi (a) ·А. В. Фомин, A. E. Nikolaev, И.П. Никитина, A. S. Zubrilov, M. G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D. Tsvetkov	2001	14
20	Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions Technical Physics Letters ·A. А. Lebedev, G. N. Mosina, И.П. Никитина, N.S. Savkina, L. M. Sorokin, A. S. Tregubova	2001	11

About И.П. Никитина

И.П. Никитина is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 57 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (26 papers), Silicon Carbide Semiconductor Technologies (25 papers), Ga2O3 and related materials (18 papers), ZnO doping and properties (12 papers), Semiconductor materials and devices (10 papers), Semiconductor materials and interfaces (8 papers), Thin-Film Transistor Technologies (8 papers) and Metal and Thin Film Mechanics (7 papers). The work is most often cited by research in Condensed Matter Physics (610 citations), Electronic, Optical and Magnetic Materials (419 citations), Materials Chemistry (465 citations), Electrical and Electronic Engineering (508 citations) and Atomic and Molecular Physics, and Optics (252 citations). И.П. Никитина has collaborated with scholars based in Russia, United States and Ukraine. Frequent co-authors include Konstantin Vassilevski, V. Dmitriev, V. Yu. Davydov, A. N. Smirnov, D. K. Nelson, N. S. Averkiev, M. A. Jacobson, O. Semchinova, Anatoli Polkovnikov and I. N. Goncharuk. Their work appears in journals such as Materials Science and Engineering B, Journal of Crystal Growth, Solid-State Electronics, Semiconductor Science and Technology and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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И.П. Никитина

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