И.П. Никитина

1.3k citations

50 papers · 1.1k · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Nuclear Energy and Engineering

Papers in

Condensed Matter Physics 25
- GaN-based semiconductor devices and materials 25
Electrical and Electronic Engineering 21
- Silicon Carbide Semiconductor Technologies 19
- Advanced Semiconductor Detectors and Materials 3
- Radiation Effects in Electronics 1

Co-authors: Konstantin V. Vassilevski (10 shared papers)Vladimir A. Dmitriev (21 shared papers)V. Yu. Davydov (4 shared papers)Alexander N. Smirnov (5 shared papers)Nikita S. Averkiev (1 shared paper)I. N. Goncharuk (1 shared paper)M. A. Jacobson (1 shared paper)O. K. Semchinova (1 shared paper)
Journals: physica status solidi (a) (4 papers)Journal of Crystal Growth (3 papers)Materials Science and Engineering B (3 papers)Solid-State Electronics (3 papers)Journal of Applied Physics (2 papers)
Partner nations: Russia United States United Kingdom

In The Last Decade

И.П. Никитина

49 papers receiving 1.1k citations

Peers

Countries citing papers authored by И.П. Никитина

Since Specialization

Citations

This map shows the geographic impact of И.П. Никитина's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by И.П. Никитина with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites И.П. Никитина more than expected).

Fields of papers citing papers by И.П. Никитина

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by И.П. Никитина. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by И.П. Никитина. The network helps show where И.П. Никитина may publish in the future.

Co-authors

The 25 scholars most cited alongside И.П. Никитина, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with И.П. Никитина Line = papers co-authored together И.П. Никитина links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC Journal of Applied Physics ·V. Yu. Davydov, Nikita S. Averkiev, I. N. Goncharuk, D. K. Nelson, И.П. Никитина, Anatoli Polkovnikov, Alexander N. Smirnov, M. A. Jacobson	1997	326
2	Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide Journal of Applied Physics ·И.П. Никитина, Konstantin V. Vassilevski, Nicolas G. Wright, Alton B. Horsfall, Anthony G. O'Neill, C. Mark Johnson	2005	126
3	Epitaxial growth of ( 2 ¯ 01 ) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy Materials Science in Semiconductor Processing ·Vladimir I. Nikolaev, А. И. Печников, С. И. Степанов, И.П. Никитина, Alexander N. Smirnov, Andrey V. Chikiryaka, S.S. Sharofidinov, Vladislav E. Bougrov	2016	58
4	Growth and characterization of β-Ga2O3 crystals Journal of Crystal Growth ·Vladimir I. Nikolaev, V. N. Maslov, С. И. Степанов, А. И. Печников, V. M. Krymov, И.П. Никитина, L. I. Guzilova, Vladislav E. Bougrov	2016	54
5	Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing Semiconductor Science and Technology ·Konstantin V. Vassilevski, Nicolas G. Wright, И.П. Никитина, Alton B. Horsfall, Anthony G. O'Neill, Michael J. Uren, K.P. Hilton, A. Masterton	2005	52
6	Physical Properties of Bulk GaN Crystals Grown by HVPE MRS Internet Journal of Nitride Semiconductor Research ·Yu. Melnik, Konstantin V. Vassilevski, И.П. Никитина, A.I. Babanin, V. Yu. Davydov, Vladimir A. Dmitriev	1997	49
7	Fermi level dependence of hydrogen diffusivity in GaN Applied Physics Letters ·Alexander Y. Polyakov, N. B. Smirnov, S. J. Pearton, Fan Ren, Bertrand Theys, François Jomard, Zéphirin Teukam, V. A. Dmitriev	2001	37
8	Properties of Free-Standing GaN Bulk Crystals Grown by HVPE MRS Proceedings ·Yu. Melnik, Andrey E. Nikolaev, И.П. Никитина, Konstantin V. Vassilevski, Vladimir A. Dmitriev	1997	31
9	Device processing and characterisation of high temperature silicon carbide Schottky diodes Microelectronic Engineering ·Konstantin V. Vassilevski, И.П. Никитина, Nicolas G. Wright, Alton B. Horsfall, Anthony G. O'Neill, C. Mark Johnson	2005	29
10	Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy Journal of Electronic Materials ·S. V. Rendakova, И.П. Никитина, Alla S. Tregubova, Vladimir A. Dmitriev	1998	26
11	Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy physica status solidi (a) ·Yu. Melnik, D. Tsvetkov, А. И. Печников, И.П. Никитина, Nikolay I. Kuznetsov, Vladimir A. Dmitriev	2001	23
12	Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC Semiconductor Science and Technology ·И.П. Никитина, Konstantin V. Vassilevski, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Samit Kumar Ray, Konstantinos Zekentes, C. Mark Johnson	2009	23
13	Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC IEEE Transactions on Electron Devices ·Erik Danielsson, Carl‐Mikael Zetterling, Mikael Östling, Andrey E. Nikolaev, И.П. Никитина, Vladimir A. Dmitriev	2001	22
14	Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy Diamond and Related Materials ·Yu. Melnik, И.П. Никитина, Andrey E. Nikolaev, Vladimir A. Dmitriev	1997	19
15	Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE physica status solidi (a) ·M. Albrecht, И.П. Никитина, Andrey E. Nikolaev, Yu. Melnik, V. A. Dmitriev, H. P. Strunk	1999	19
16	Residual strains in GaN grown on 6H-SiC Diamond and Related Materials ·И.П. Никитина, Mikhail P. Scheglov, Yu. Melnik, Kenneth G. Irvine, Vladimir A. Dmitriev	1997	17
17	Properties of Si-Doped GaN Layers Grown by HVPE physica status solidi (a) ·Andrey E. Nikolaev, И.П. Никитина, A. S. Zubrilov, Marina G. Mynbaeva, Nikolay I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D. Tsvetkov +1 other	2001	17
18	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, Andrey E. Nikolaev, И.П. Никитина, Nikolay I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	17
19	Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Solid-State Electronics ·Alexander Y. Polyakov, Anatoliy V. Govorkov, N. B. Smirnov, Andrey E. Nikolaev, И.П. Никитина, Vladimir A. Dmitriev	2001	15
20	Growth and characterization of GaN layers on SiC substrates Journal of Crystal Growth ·Vladimir A. Dmitriev, Kenneth G. Irvine, Gary E. Bulman, John A. Edmond, A. S. Zubrilov, Vladimir I. Nikolaev, И.П. Никитина, D. Tsvetkov	1996	11

About И.П. Никитина

И.П. Никитина is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Radiation, having authored 50 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and interfaces (5 papers), Ga2O3 and related materials (4 papers), Advanced Semiconductor Detectors and Materials (3 papers), Semiconductor Quantum Structures and Devices (2 papers), Radiation Detection and Scintillator Technologies (2 papers) and Radiation Effects in Electronics (1 paper). The work is most often cited by research in Condensed Matter Physics (616 citations), Nuclear Energy and Engineering (2 citations), Electronic, Optical and Magnetic Materials (120 citations), Electrical and Electronic Engineering (301 citations) and Atomic and Molecular Physics, and Optics (138 citations). И.П. Никитина has collaborated with scholars based in Russia, United States and United Kingdom. Frequent co-authors include Konstantin V. Vassilevski, Vladimir A. Dmitriev, V. Yu. Davydov, Alexander N. Smirnov, Nikita S. Averkiev, I. N. Goncharuk, M. A. Jacobson, O. K. Semchinova, Anatoli Polkovnikov and D. K. Nelson. Their work appears in journals such as physica status solidi (a), Journal of Crystal Growth, Materials Science and Engineering B, Solid-State Electronics and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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И.П. Никитина

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