Р.А. Талалаев
Impact in
- Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 43
-
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 8
- Silicon and Solar Cell Technologies 5
- Co-authors
- S. Yu. Karpov (20 shared papers)E.V. Yakovlev (26 shared papers)Yu.N. Makarov (21 shared papers)N. Grandjean (3 shared papers)J. Massies (3 shared papers)F. Sèmond (1 shared paper)W. V. Lundin (6 shared papers)A.S. Segal (8 shared papers)
- Journals
- Journal of Crystal Growth (22 papers)Japanese Journal of Applied Physics (4 papers)Materials Science and Engineering B (3 papers)MRS Internet Journal of Nitride Semiconductor Research (3 papers)Semiconductor Science and Technology (1 paper)
- Partner nations
- GermanyRussiaUnited States
In The Last Decade
Р.А. Талалаев
50 papers receiving 838 citations
Peers
Comparison fields: 5 of 27
- Condensed Matter Physics 769
- Electronic, Optical and Magnetic Materials 311
- Atomic and Molecular Physics, and Optics 264
- Mechanics of Materials 199
- Materials Chemistry 330
Countries citing papers authored by Р.А. Талалаев
This map shows the geographic impact of Р.А. Талалаев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Р.А. Талалаев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Р.А. Талалаев more than expected).
Fields of papers citing papers by Р.А. Талалаев
This network shows the impact of papers produced by Р.А. Талалаев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Р.А. Талалаев. The network helps show where Р.А. Талалаев may publish in the future.
Co-authors
The 25 scholars most cited alongside Р.А. Талалаев, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 51 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 1999 | 93 | |
| 2 | 2005 | 73 | |
| 3 | 1999 | 64 | |
| 4 | 1999 | 54 | |
| 5 | 2008 | 45 | |
| 6 | 2004 | 40 | |
| 7 | 2008 | 36 | |
| 8 | 2006 | 35 | |
| 9 | 2001 | 28 | |
| 10 | 2000 | 27 | |
| 11 | 2002 | 24 | |
| 12 | 1996 | 23 | |
| 13 | 1997 | 21 | |
| 14 | 2011 | 20 | |
| 15 | 1999 | 17 | |
| 16 | 2004 | 17 | |
| 17 | 2013 | 15 | |
| 18 | 2010 | 15 | |
| 19 | 2020 | 15 | |
| 20 | 1997 | 13 |
About Р.А. Талалаев
Р.А. Талалаев is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 51 papers that have together received 894 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (18 papers), Metal and Thin Film Mechanics (12 papers), Ga2O3 and related materials (9 papers), Silicon Carbide Semiconductor Technologies (8 papers), ZnO doping and properties (5 papers) and Silicon and Solar Cell Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (769 citations), Electronic, Optical and Magnetic Materials (311 citations), Atomic and Molecular Physics, and Optics (264 citations), Mechanics of Materials (199 citations) and Materials Chemistry (330 citations). Р.А. Талалаев has collaborated with scholars based in Germany, Russia and United States. Frequent co-authors include S. Yu. Karpov, E.V. Yakovlev, Yu.N. Makarov, N. Grandjean, J. Massies, F. Sèmond, W. V. Lundin, A.S. Segal, E. E. Zavarin and M. Heuken. Their work appears in journals such as Journal of Crystal Growth, Japanese Journal of Applied Physics, Materials Science and Engineering B, MRS Internet Journal of Nitride Semiconductor Research and Semiconductor Science and Technology.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.