L. E. Vorobjev

959 citations

100 papers · 731 · h-index 13

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Spectroscopy top 5%
- Spectroscopy and Laser Applications

Papers in

Atomic and Molecular Physics, and Optics 83
- Semiconductor Quantum Structures and Devices 79
Electrical and Electronic Engineering 79
- Terahertz technology and applications 26
- Semiconductor Lasers and Optical Devices 22
- Advanced Semiconductor Detectors and Materials 15
- Photonic and Optical Devices 10

Co-authors: D. A. Firsov (87 shared papers)Gregory Belenky (13 shared papers)D. Donetsky (6 shared papers)Stefan P. Svensson (1 shared paper)A. N. Sofronov (34 shared papers)V. Yu. Panevin (38 shared papers)E. L. Ivchenko (3 shared papers)V. A. Shalygin (38 shared papers)
Journals: Superlattices and Microstructures (7 papers)Semiconductor Science and Technology (7 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (5 papers)Optical and Quantum Electronics (3 papers)
Partner nations: Russia Germany United States

In The Last Decade

L. E. Vorobjev

92 papers receiving 693 citations

Peers

Countries citing papers authored by L. E. Vorobjev

Since Specialization

Citations

This map shows the geographic impact of L. E. Vorobjev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. E. Vorobjev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. E. Vorobjev more than expected).

Fields of papers citing papers by L. E. Vorobjev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. E. Vorobjev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. E. Vorobjev. The network helps show where L. E. Vorobjev may publish in the future.

Co-authors

The 25 scholars most cited alongside L. E. Vorobjev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. E. Vorobjev Line = papers co-authored together L. E. Vorobjev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 100 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Applied Physics Letters ·D. Donetsky, Stefan P. Svensson, L. E. Vorobjev, Gregory Belenky	2009	127
2	Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells Applied Physics Letters ·Sergey Ganichev, Hermann Ketterl, W. Prettl, E. L. Ivchenko, L. E. Vorobjev	2000	79
3	Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure Journal of Applied Physics ·V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko, K. V. Maremyanin, A A Artemyev, V. Yu. Panevin, L. E. Vorobjev, D. A. Firsov, V. V. Korotyeyev, A. V. Sakharov, E. E. Zavarin, D S Arteev, W. V. Lundin, A. F. Tsatsul’nikov, Sami Suihkonen, Christoffer Kauppinen	2019	25
4	Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, G. A. Melentyev, А. В. Антонов, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakharyin, Sami Suihkonen, P.T. Törmä, M. Ali, Harri Lipsanen	2009	21
5	Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field Journal of Applied Physics ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, A. N. Sofronov, G. A. Melentyev, W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov	2011	20
6	Terahertz luminescence in strained GaAsN:Be layers under strong electric fields Applied Physics Letters ·V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, A. N. Sofronov, A. V. Andrianov, A. O. Zakhar’in, A. Yu. Egorov, A. G. Gladyshev, О. В. Бондаренко, V. M. Ustinov, N. N. Zinov’ev, Д. В. Козлов	2007	18
7	Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation Journal of Applied Physics ·G A Melentev, V. A. Shalygin, L. E. Vorobjev, V. Yu. Panevin, D. A. Firsov, Lauri Riuttanen, Sami Suihkonen, V. V. Korotyeyev, Yu.M. Lyaschuk, V. A. Kochelap, V. N. Poroshin	2016	18
8	Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm Semiconductors ·A. V. Babichev, Adel Bousseksou, N. A. Pikhtin, I. S. Tarasov, E. V. Nikitina, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov	2016	17
9	Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment Nanomaterials ·H.A. Sarkisyan, David B. Hayrapetyan, Lyudvig S. Petrosyan, É. M. Kazaryan, A. N. Sofronov, R M Balagula, D. A. Firsov, L. E. Vorobjev, A. A. Tonkikh	2019	16
10	Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping Semiconductors ·A. Yu. Egorov, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, E. V. Nikitina, Maria Tchernycheva, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, N. A. Pikhtin, I. S. Tarasov	2015	15
11	Optical Spin Orientation Under Inter- and Intra-Subband Transitions in QWs Journal of Superconductivity ·S. A. Tarasenko, E. L. Ivchenko, Vassilij Belkov, Sergey Ganichev, D. Schowalter, Petra Schneider, M. Sollinger, Wilhelm Prettl, V. M. Ustinov, A. E. Zhukov, L. E. Vorobjev	2003	15
12	Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer Semiconductor Science and Technology ·Gregory Belenky, L. Shterengas, D Wang, G. Kipshidze, L. E. Vorobjev	2009	14
13	Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping Semiconductors ·D. A. Firsov, L. E. Vorobjev, V. Yu. Panevin, A. N. Sofronov, R M Balagula, Ivan Makhov, Д. В. Козлов, А. П. Васильев	2015	13
14	Far-infrared spectra of reflectivity, transmission and hot-hole emission in p-doped multiple quantum wells Semiconductor Science and Technology ·S. Farjami Shayesteh, T. Dumelow, T.J. Parker, G. Mirjalili, L. E. Vorobjev, D. Donetsky, A. Kastalsky	1996	11
15	<title>Toward far- and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·V. Ya. Aleshkin, Alexander A. Andronov, А. В. Антонов, Е. В. Демидов, А. А. Дубинов, V. I. Gavrilenko, D. G. Revin, Б. Н. Звонков, N. B. Zvonkov, E. A. Uskova, L. E. Vorobjev, D. A. Firsov, S. N. Danilov, Ilya E. Titkov, V. A. Shalygin, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov	2001	11
16	A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots IEEE Journal of Quantum Electronics ·A. Kastalsky, L. E. Vorobjev, D. A. Firsov, V. L. Zerova, E. Towe	2001	11
17	Lateral photoconductivity in structures with Ge/Si quantum dots Semiconductors ·V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, M. Ya. Vinnichenko, R M Balagula, A. A. Tonkikh, P. Werner, B. Fuhrman, G. Schmidt	2013	10
18	Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs Physica E Low-dimensional Systems and Nanostructures ·Sergey Ganichev, S. N. Danilov, V. V. Bel’kov, E. L. Ivchenko, Hermann Ketterl, L. E. Vorobjev, M. Bichler, W. Wegscheider, W. Prettl	2001	10
19	Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots Superlattices and Microstructures ·A. N. Sofronov, L. E. Vorobjev, D. A. Firsov, V. Yu. Panevin, R M Balagula, P. Werner, A. A. Tonkikh	2015	10
20	Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells Semiconductors ·D. A. Firsov, L. E. Vorobjev, M. Ya. Vinnichenko, R M Balagula, M. M. Kulagina, A. P. Vasiliev	2015	9

About L. E. Vorobjev

L. E. Vorobjev is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy, Materials Chemistry and Biomedical Engineering, having authored 100 papers that have together received 731 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (79 papers), Spectroscopy and Laser Applications (43 papers), Terahertz technology and applications (26 papers), Semiconductor Lasers and Optical Devices (22 papers), Advanced Semiconductor Detectors and Materials (15 papers), Silicon Nanostructures and Photoluminescence (11 papers), Photonic and Optical Devices (10 papers) and GaN-based semiconductor devices and materials (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (530 citations), Spectroscopy (170 citations), Electrical and Electronic Engineering (527 citations), Condensed Matter Physics (106 citations) and Materials Chemistry (147 citations). L. E. Vorobjev has collaborated with scholars based in Russia, Germany and United States. Frequent co-authors include D. A. Firsov, Gregory Belenky, D. Donetsky, Stefan P. Svensson, A. N. Sofronov, V. Yu. Panevin, E. L. Ivchenko, V. A. Shalygin, Sergey Ganichev and W. Prettl. Their work appears in journals such as Superlattices and Microstructures, Semiconductor Science and Technology, Applied Physics Letters, Journal of Applied Physics and Optical and Quantum Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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L. E. Vorobjev

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