E. E. Zavarin

1.1k citations

124 papers · 928 · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 117
- GaN-based semiconductor devices and materials 116
Atomic and Molecular Physics, and Optics 57
- Semiconductor Quantum Structures and Devices 48

Co-authors: W. V. Lundin (118 shared papers)A. F. Tsatsul’nikov (90 shared papers)A. V. Sakharov (85 shared papers)A. E. Nikolaev (34 shared papers)M. A. Yagovkina (17 shared papers)P. N. Brunkov (22 shared papers)Р.А. Талалаев (5 shared papers)V. Yu. Davydov (15 shared papers)
Journals: Journal of Crystal Growth (8 papers)Applied Physics Letters (4 papers)Journal of Physics Condensed Matter (3 papers)physica status solidi (a) (3 papers)Journal of Applied Physics (2 papers)
Partner nations: Russia France United States

In The Last Decade

E. E. Zavarin

118 papers receiving 884 citations

Peers

Countries citing papers authored by E. E. Zavarin

Since Specialization

Citations

This map shows the geographic impact of E. E. Zavarin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. E. Zavarin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. E. Zavarin more than expected).

Fields of papers citing papers by E. E. Zavarin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. E. Zavarin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. E. Zavarin. The network helps show where E. E. Zavarin may publish in the future.

Co-authors

The 25 scholars most cited alongside E. E. Zavarin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. E. Zavarin Line = papers co-authored together E. E. Zavarin links everyone, so they are left out of the graph.

All Works

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#	Work
1	Hydrogen effects in III-nitride MOVPE Journal of Crystal Growth ·E.V. Yakovlev, Р.А. Талалаев, A.S. Segal, A.V. Lobanova, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. F. Tsatsul’nikov, A. E. Nikolaev	2008	45
2	Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity Physics of the Solid State ·О. Е. Терещенко, G. É. Shaĭbler, A. S. Yaroshevich, S.V. Shevelev, A. S. Terekhov, W. V. Lundin, E. E. Zavarin, A. I. Besyul’kin	2004	45
3	Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study Journal of Crystal Growth ·A.V. Kondratyev, Р.А. Талалаев, W. V. Lundin, A. V. Sakharov, Anrei Tsatsul'nikov, E. E. Zavarin, А. В. Фомин, D. S. Sizov	2004	40
4	High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics Optics Letters ·Erik Stassen, Minhao Pu, Elizaveta Semenova, E. E. Zavarin, W. V. Lundin, Kresten Yvind	2019	32
5	Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov, А. Л. Закгейм, A. E. Cherniakov, N. Cherkashin, Martin Hÿtch, E.V. Yakovlev, D.S. Bazarevskiy, M. M. Rozhavskaya, A. F. Tsatsul’nikov	2010	30
6	Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al₂O₃ Journal of Physics Condensed Matter ·B. M. Ataev, W. V. Lundin, V. V. Mamedov, A. M. Bagamadova, E. E. Zavarin	2001	30
7	Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure Journal of Applied Physics ·V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko, K. V. Maremyanin, A A Artemyev, V. Yu. Panevin, L. E. Vorobjev, D. A. Firsov, V. V. Korotyeyev, A. V. Sakharov, E. E. Zavarin, D S Arteev, W. V. Lundin, A. F. Tsatsul’nikov, Sami Suihkonen, Christoffer Kauppinen	2019	25
8	Optical lattices of InGaN quantum well excitons Applied Physics Letters ·V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, M. A. Yagovkina, Taek Kim, Youngsoo Park	2011	25
9	Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers Nanotechnology ·N. M. Shmidt, V. V. Emtsev, А. Г. Колмаков, A D Kryzhanovsky, W. V. Lundin, D. S. Poloskin, В. В. Ратников, A. N. Titkov, A. Usikov, E. E. Zavarin	2001	22
10	High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers Journal of Physics Condensed Matter ·N. M. Shmidt, O. A. Soltanovich, A. Usikov, E. B. Yakimov, E. E. Zavarin	2002	21
11	Study of GaN doping with carbon from propane in a wide range of MOVPE conditions Journal of Crystal Growth ·W. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. Yu. Kazantsev, B. Ya. Ber, M. A. Yagovkina, P. N. Brunkov, A. F. Tsatsul’nikov	2016	20
12	Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation Semiconductors ·В. Г. Тихомиров, V. E. Zemlyakov, В.В. Волков, Ya. M. Parnes, V. N. Vyuginov, W. V. Lundin, Alexei V. Sakharov, E. E. Zavarin, A. F. Tsatsul’nikov, N. Cherkashin, М. Н. Мизеров, V. M. Ustinov	2016	19
13	Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers Semiconductors ·W. V. Lundin, A. V. Sakharov, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, G. A. Mikhailovsky, P. N. Brunkov, В. В. Гончаров, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul’nikov	2009	16
14	Investigation of Statistical Broadening in InGaN Alloys Journal of Physics Conference Series ·D S Arteev, A. V. Sakharov, E. E. Zavarin, W. V. Lundin, A. N. Smirnov, V. Yu. Davydov, M. A. Yagovkina, S. O. Usov, A. F. Tsatsul’nikov	2018	16
15	Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide Technical Physics Letters ·С. А. Кукушкін, А. В. Осипов, S. G. Zhukov, E. E. Zavarin, W. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsul’nikov, S. I. Troshkov, Н. А. Феоктистов	2012	15
16	Fast AlGaN growth in a whole composition range in planetary reactor Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, M. M. Rozhavskaya, E. E. Zavarin, A. V. Sakharov, S. I. Troshkov, M. A. Yagovkina, A. F. Tsatsul’nikov	2012	15
17	Growth of III-N/graphene heterostructures in single vapor phase epitaxial process Journal of Crystal Growth ·W. V. Lundin, E. E. Zavarin, A. V. Sakharov, D. A. Zakheim, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, M. A. Yagovkina, P. N. Brunkov, E. Yu. Lundina, L. K. Markov, A. F. Tsatsul’nikov	2018	14
18	Effects of reactor pressure and residence time on GaN MOVPE growth efficiency Journal of Crystal Growth ·W. V. Lundin, E. E. Zavarin, D. S. Sizov, M.A. Sinitsin, A. F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, Р.А. Талалаев	2005	13
19	Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs Semiconductors ·A. V. Sakharov, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, S. O. Usov, V. S. Sizov, G. A. Mikhailovsky, N. Cherkashin, Martin Hÿtch, F. Hüe, E.V. Yakovlev, A.V. Lobanova, A. F. Tsatsul’nikov	2009	13
20	Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells Journal of Applied Physics ·A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul’nikov, M. A. Yagovkina	2017	13

About E. E. Zavarin

E. E. Zavarin is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 124 papers that have together received 928 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (116 papers), Semiconductor Quantum Structures and Devices (48 papers), Ga2O3 and related materials (36 papers), Semiconductor materials and devices (23 papers), ZnO doping and properties (23 papers), Metal and Thin Film Mechanics (15 papers), Photocathodes and Microchannel Plates (13 papers) and Acoustic Wave Resonator Technologies (12 papers). The work is most often cited by research in Condensed Matter Physics (720 citations), Electronic, Optical and Magnetic Materials (311 citations), Atomic and Molecular Physics, and Optics (372 citations), Materials Chemistry (321 citations) and Electrical and Electronic Engineering (358 citations). E. E. Zavarin has collaborated with scholars based in Russia, France and United States. Frequent co-authors include W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, A. E. Nikolaev, M. A. Yagovkina, P. N. Brunkov, Р.А. Талалаев, V. Yu. Davydov, A. Usikov and E.V. Yakovlev. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Physics Condensed Matter, physica status solidi (a) and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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