A. Y. Polyakov

9.6k citations

375 papers · 8.2k · h-index 44

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.2%
- Ga2O3 and related materials

Papers in

Electronic, Optical and Magnetic Materials 229
- Ga2O3 and related materials 217
Condensed Matter Physics 214
- GaN-based semiconductor devices and materials 213

Co-authors: S. J. Pearton (223 shared papers)N. B. Smirnov (220 shared papers)F. Ren (60 shared papers)In‐Hwan Lee (91 shared papers)A. V. Govorkov (127 shared papers)E. B. Yakimov (79 shared papers)Ivan Shchemerov (68 shared papers)Jihyun Kim (18 shared papers)
Journals: Journal of Applied Physics (65 papers)Applied Physics Letters (36 papers)ECS Journal of Solid State Science and Technology (33 papers)Solid-State Electronics (33 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (18 papers)
Partner nations: Russia United States South Korea

In The Last Decade

A. Y. Polyakov

362 papers receiving 7.9k citations

Peers

Countries citing papers authored by A. Y. Polyakov

Since Specialization

Citations

This map shows the geographic impact of A. Y. Polyakov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Y. Polyakov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Y. Polyakov more than expected).

Fields of papers citing papers by A. Y. Polyakov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Y. Polyakov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Y. Polyakov. The network helps show where A. Y. Polyakov may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Y. Polyakov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Y. Polyakov Line = papers co-authored together A. Y. Polyakov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Review—Ionizing Radiation Damage Effects on GaN Devices ECS Journal of Solid State Science and Technology ·S. J. Pearton, F. Ren, Erin Patrick, Mark E. Law, A. Y. Polyakov	2015	281
2	Radiation damage effects in Ga₂O₃ materials and devices Journal of Materials Chemistry C ·Jihyun Kim, S. J. Pearton, Chaker Fares, Jiancheng Yang, F. Ren, Suhyun Kim, A. Y. Polyakov	2018	220
3	Deep traps in GaN-based structures as affecting the performance of GaN devices Materials Science and Engineering R Reports ·A. Y. Polyakov, In‐Hwan Lee	2015	197
4	Review of radiation damage in GaN-based materials and devices Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·S. J. Pearton, Richard Deist, F. Ren, Lu Liu, A. Y. Polyakov, Jihyun Kim	2013	195
5	Lifetime-limiting defects in n− 4H-SiC epilayers Applied Physics Letters ·P. B. Klein, B. V. Shanabrook, S. Huh, A. Y. Polyakov, Marek Skowroński, Joseph J. Sumakeris, Michael O’Loughlin	2006	187
6	Radiation effects in GaN materials and devices Journal of Materials Chemistry C ·A. Y. Polyakov, S. J. Pearton, Patrick Frenzer, F. Ren, Lu Liu, Jihyun Kim	2012	185
7	Electrical characteristics of Au and Ag Schottky contacts on n-ZnO Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, Е. А. Кожухова, V. I. Vdovin, K. Ip, Young-Woo Heo, D. P. Norton, S. J. Pearton	2003	167
8	Gallium antimonide device related properties Solid-State Electronics ·A. G. Milnes, A. Y. Polyakov	1993	163
9	Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, Akito Kuramata, S. J. Pearton	2018	125
10	Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si APL Materials ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, S. J. Pearton, F. Ren, А. В. Черных, П. Б. Лагов, T. V. Kulevoy	2018	101
11	Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. Shin, Marek Skowroński, David W. Greve	1998	96
12	Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films Solid-State Electronics ·A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, A. V. Govorkov, B.V Pushniy	1998	92
13	Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, E. B. Yakimov, S. J. Pearton, Chaker Fares, Jiancheng Yang, F. Ren, Jihyun Kim, П. Б. Лагов, V. S. Stolbunov, А. I. Kochkova	2018	91
14	Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors ECS Journal of Solid State Science and Technology ·S. J. Pearton, Assel Aitkaliyeva, Minghan Xian, F. Ren, Ani Khachatrian, Adrian Ildefonso, Zahabul Islam, Md Abu Jafar Rasel, Aman Haque, A. Y. Polyakov, Jihyun Kim	2021	91
15	Indium arsenide: a semiconductor for high speed and electro-optical devices Materials Science and Engineering B ·A. G. Milnes, A. Y. Polyakov	1993	91
16	Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) Applied Physics Letters ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, S. J. Pearton, F. Ren, А. В. Черных, А. I. Kochkova	2018	88
17	Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 Journal of Applied Physics ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, D. Gogova, С. А. Тарелкин, S. J. Pearton	2018	88
18	On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy Journal of Applied Physics ·A. Y. Polyakov, M. Shin, J. A. Freitas, Marek Skowroński, David W. Greve, R. G. Wilson	1996	84
19	Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Y. Polyakov, В. И. Николаев, E. B. Yakimov, F. Ren, S. J. Pearton, Jihyun Kim	2022	79
20	Properties of Si donors and persistent photoconductivity in AlGaN Solid-State Electronics ·A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. G. Mil’vidskiĭ, Joan M. Redwing, M. Shin, Marek Skowroński, David W. Greve, R. G. Wilson	1998	77

About A. Y. Polyakov

A. Y. Polyakov is a scholar working on Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 375 papers that have together received 8.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (217 papers), GaN-based semiconductor devices and materials (213 papers), ZnO doping and properties (158 papers), Semiconductor materials and devices (123 papers), Semiconductor Quantum Structures and Devices (63 papers), Advanced Photocatalysis Techniques (56 papers), Semiconductor materials and interfaces (31 papers) and Photocathodes and Microchannel Plates (29 papers). The work is most often cited by research in Condensed Matter Physics (4.0k citations), Electronic, Optical and Magnetic Materials (4.6k citations), Nuclear Energy and Engineering (69 citations), Materials Chemistry (4.2k citations) and Renewable Energy, Sustainability and the Environment (1.3k citations). A. Y. Polyakov has collaborated with scholars based in Russia, United States and South Korea. Frequent co-authors include S. J. Pearton, N. B. Smirnov, F. Ren, In‐Hwan Lee, A. V. Govorkov, E. B. Yakimov, Ivan Shchemerov, Jihyun Kim, A. G. Milnes and Marek Skowroński. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, ECS Journal of Solid State Science and Technology, Solid-State Electronics and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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A. Y. Polyakov

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