J. Graul

3.5k citations

53 papers · 3.1k · 2 hit papers · h-index 16

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38
Electrical and Electronic Engineering 24
- Semiconductor materials and devices 20

Co-authors: V. Yu. Davydov (13 shared papers)O. Semchinova (28 shared papers)J. Aderhold (35 shared papers)A. A. Klochikhin (7 shared papers)Hisatomo Harima (5 shared papers)V. V. Emtsev (7 shared papers)F. Bechstedt (4 shared papers)А. В. Мудрый (3 shared papers)
Journals: Journal of Crystal Growth (5 papers)physica status solidi (b) (4 papers)Applied Physics Letters (3 papers)Materials Science and Engineering B (3 papers)Physical review. B, Condensed matter (3 papers)
Partner nations: Germany Russia Japan

In The Last Decade

J. Graul

50 papers receiving 3.0k citations

J. Graul's Hit Papers

align trajectories log scale

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap 2002 · 892 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2002 physica status solidi (b)
1998 Physical review. B, Condensed matter

Peers

Countries citing papers authored by J. Graul

Since Specialization

Citations

This map shows the geographic impact of J. Graul's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Graul with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Graul more than expected).

Fields of papers citing papers by J. Graul

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Graul. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Graul. The network helps show where J. Graul may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Graul, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Graul Line = papers co-authored together J. Graul links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap physica status solidi (b) ·V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan, V. V. Emtsev, С. В. Иванов, F. Bechstedt, J. Furthm�ller, Hisatomo Harima, А. В. Мудрый, J. Aderhold, O. Semchinova, J. Graul Hit paper breakdown →	2002	892
2	Phonon dispersion and Raman scattering in hexagonal GaN and AlN Physical review. B, Condensed matter ·V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A.P. Mirgorodsky, R. A. Évarestov Hit paper breakdown →	1998	720
3	Band Gap of Hexagonal InN and InGaN Alloys physica status solidi (b) ·V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthm�ller, J. Aderhold, J. Graul, А. В. Мудрый, Hisatomo Harima, Akihiro Hashimoto, Akio Yamamoto, E. E. Häller	2002	259
4	Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) physica status solidi (b) ·V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthm�ller, Hisatomo Harima, А. В. Мудрый, Akihiro Hashimoto, Akio Yamamoto, J. Aderhold, J. Graul, E. E. Häller	2002	250
5	Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys Physical review. B, Condensed matter ·V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, Hisatomo Harima	2002	150
6	High-performance transistors with arsenic-implanted polysil emitters IEEE Journal of Solid-State Circuits ·J. Graul, A. Glasl, H. Murrmann	1976	107
7	Polarization and self-polarization in thin PbZr_1-xTi_xO₃(PZT) films Journal of Physics Condensed Matter ·V. P. Afanasjev, A. A. Petrov, И. П. Пронин, E. A. Tarakanov, E. Yu. Kaptelov, J. Graul	2001	102
8	InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates Journal of Crystal Growth ·J. Aderhold, V. Yu. Davydov, F. Fedler, H. Klausing, D. Mistele, T. Rotter, O. Semchinova, J. Stemmer, J. Graul	2001	86
9	Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions Applied Physics Letters ·T. Rotter, D. Mistele, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, M. Heuken	2000	82
10	Growth mechanism of polycrystalline β-SiC layers on silicon substrate Applied Physics Letters ·J. Graul, Estelle Wagner	1972	48
11	First AlGaN/GaN MOSFET with photoanodic gate dielectric Materials Science and Engineering B ·D. Mistele, T. Rotter, K.S. Röver, S. Paprotta, M. Seyboth, V. Schwegler, F. Fedler, H. Klausing, O. Semchinova, J. Stemmer, J. Aderhold, J. Graul	2002	47
12	Point defects in gamma-irradiated n-GaN Semiconductor Science and Technology ·V. V. Emtsev, V. Yu. Davydov, В. В. Козловский, W. V. Lundin, D. S. Poloskin, A. N. Smirnov, N. M. Shmidt, A. S. Usikov, J. Aderhold, H. Klausing, D. Mistele, T. Rotter, J. Stemmer, O. Semchinova, J. Graul	2000	41
13	Ion Implantation in Semiconductors CERN Document Server (European Organization for Nuclear Research) ·Ingolf Rüge, J. Graul	1971	28
14	Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys physica status solidi (b) ·V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk, A. V. Sakharov, D. A. Kurdyukov, М. В. Байдакова, V. A. Vekshin, С. В. Иванов, J. Aderhold, J. Graul, Akihiro Hashimoto, Akio Yamamoto	2003	22
15	Photoluminescence, depth profile, and lattice instability of hexagonal InN films Applied Physics Letters ·O. Semchinova, J. Aderhold, J. Graul, A. V. Filimonov, Helmut Neff	2003	20
16	Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction Journal of Crystal Growth ·F. Fedler, R. J. Hauenstein, H. Klausing, D. Mistele, O. Semchinova, J. Aderhold, J. Graul	2002	15
17	Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001) Journal of Electronic Materials ·Ana M. Sánchez, F. J. Pacheco, Sergio I. Molina, J. Stemmer, J. Aderhold, J. Graul	2001	12
18	Electrical properties of photoanodically generated thin oxide films on n-GaN Journal of Crystal Growth ·T. Rotter, R. Ferretti, D. Mistele, F. Fedler, H. Klausing, J. Stemmer, O. Semchinova, J. Aderhold, J. Graul	2001	12
19	Bipolar high-speed low-power gates with double implanted transistors IEEE Journal of Solid-State Circuits ·J. Graul, Harald Kaiser, W. Wilhelm, H. Ryssel	1975	11
20	Smooth GaN surfaces by photoinduced electro-chemical etching Materials Science and Engineering B ·T. Rotter, J. Aderhold, D. Mistele, O. Semchinova, J. Stemmer, D. Uffmann, J. Graul	1999	11

About J. Graul

J. Graul is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 53 papers that have together received 3.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (38 papers), Ga2O3 and related materials (24 papers), Semiconductor materials and devices (20 papers), ZnO doping and properties (15 papers), Semiconductor Quantum Structures and Devices (8 papers), Metal and Thin Film Mechanics (6 papers), Semiconductor materials and interfaces (3 papers) and Seismic Imaging and Inversion Techniques (3 papers). The work is most often cited by research in Condensed Matter Physics (2.4k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Materials Chemistry (1.4k citations), Atomic and Molecular Physics, and Optics (923 citations) and Mechanics of Materials (448 citations). J. Graul has collaborated with scholars based in Germany, Russia and Japan. Frequent co-authors include V. Yu. Davydov, O. Semchinova, J. Aderhold, A. A. Klochikhin, Hisatomo Harima, V. V. Emtsev, F. Bechstedt, А. В. Мудрый, A. N. Smirnov and I. N. Goncharuk. Their work appears in journals such as Journal of Crystal Growth, physica status solidi (b), Applied Physics Letters, Materials Science and Engineering B and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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