A. Corrion

2.7k citations

50 papers · 2.2k · 1 hit paper · h-index 24

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 49
- GaN-based semiconductor devices and materials 49
Electrical and Electronic Engineering 40
- Radio Frequency Integrated Circuit Design 26
- Semiconductor materials and devices 14
- Silicon Carbide Semiconductor Technologies 6
- Advanced Power Amplifier Design 4

Co-authors: M. Micovic (23 shared papers)K. Shinohara (22 shared papers)David F. Brown (19 shared papers)D. Regan (16 shared papers)Joel Wong (12 shared papers)James S. Speck (13 shared papers)Helen Fung (6 shared papers)C. Poblenz (12 shared papers)
Journals: IEEE Electron Device Letters (12 papers)Journal of Applied Physics (3 papers)Electronics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Applied Physics Letters (1 paper)
Partner nations: United States Taiwan

In The Last Decade

A. Corrion

50 papers receiving 2.1k citations

A. Corrion's Hit Papers

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications 2013 · 400 citations

Peers

Countries citing papers authored by A. Corrion

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Citations

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Fields of papers citing papers by A. Corrion

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Corrion. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Corrion. The network helps show where A. Corrion may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Corrion, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Corrion Line = papers co-authored together A. Corrion links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 50 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications IEEE Transactions on Electron Devices ·K. Shinohara, D. Regan, Yan Tang, A. Corrion, David F. Brown, Joel Wong, John F. Robinson, Helen Fung, Adele Schmitz, Thomas C. Oh, Samuel Jungjin Kim, Peter S. Chen, Robert G. Nagele, A. Margomenos, M. Micovic Hit paper breakdown →	2013	400
2	1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance IEEE Electron Device Letters ·Rongming Chu, A. Corrion, M Chen, Ray Li, D. Wong, Daniel Zehnder, B. Hughes, K. S. Boutros	2011	309
3	Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz IEEE Electron Device Letters ·Yan Tang, K. Shinohara, D. Regan, A. Corrion, David F. Brown, Joel Wong, Adele Schmitz, Helen Fung, Samuel Kim, M. Micovic	2015	226
4	Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K. Shinohara, D. Regan, A. Corrion, David F. Brown, Shawn D. Burnham, P. J. Willadsen, I. Alvarado-Rodriguez, M. Cunningham, C. Butler, A. Schmitz, S. Kim, Brian Holden, David T. Chang, V. Lee, Atsushi Ohoka, P.M. Asbeck, M. Micovic	2011	88
5	Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy Applied Physics Letters ·Aaron R. Arehart, A. Corrion, C. Poblenz, James S. Speck, Umesh K. Mishra, Steven A. Ringel	2008	83
6	GaN Technology for E, W and G-Band Applications A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, David F. Brown, A. Corrion, H. P. Moyer, Shawn D. Burnham, D. Regan, Robert Grabar, C. McGuire, Meredith Wetzel, R. Bowen, P. S. Chen, Haw Tai, A. Schmitz, Helen Fung, A. Fung, D. H. Chow	2014	81
7	Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature IEEE Electron Device Letters ·F. Recht, L. McCarthy, Siddharth Rajan, A. Chakraborty, C. Poblenz, A. Corrion, James S. Speck, Umesh K. Mishra	2006	72
8	Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz IEEE Electron Device Letters ·K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, David F. Brown, P. J. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, Atsushi Ohoka, P.M. Asbeck, M. Micovic	2011	69
9	360 GHz f_MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications IEEE Electron Device Letters ·Jeong‐Sun Moon, Joel Wong, Bob Grabar, M. Antcliffe, Peter Chen, Erdem Arkun, Isaac Khalaf, A. Corrion, James M. Chappell, Nivedhita Venkatesan, Patrick Fay	2020	62
10	W-Band GaN MMIC with 842 mW output power at 88 GHz 2010 IEEE MTT-S International Microwave Symposium ·M. Micovic, A. Kurdoghlian, K. Shinohara, Shawn D. Burnham, I. Milosavljevic, Ming Hu, A. Corrion, A. Fung, R. Lin, Lorene Samoska, Pekka Kangaslahti, Bjorn Lambrigtsen, P. F. Goldsmith, Wei-Ting Wong, A. Schmitz, P. Hashimoto, P. J. Willadsen, D. H. Chow	2010	61
11	Self-aligned-gate GaN-HEMTs with heavily-doped n<sup>+</sup>-GaN ohmic contacts to 2DEG K. Shinohara, D. Regan, A. Corrion, David F. Brown, Yixi Tang, Joel Wong, G. de Candia, A. Schmitz, Helen Fung, S. Kim, M. Micovic	2012	57
12	Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment IEEE Electron Device Letters ·L. Shen, Tomás Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2006	52
13	Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$ IEEE Electron Device Letters ·A. Corrion, K. Shinohara, D. Regan, I. Milosavljevic, P. Hashimoto, P. J. Willadsen, A. Schmitz, D. Wheeler, C. Butler, David F. Brown, Shawn D. Burnham, M. Micovic	2010	51
14	Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Aaron R. Arehart, A. Corrion, C. Poblenz, James S. Speck, Umesh K. Mishra, Steven P. DenBaars, Steven A. Ringel	2008	48
15	Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors Journal of Applied Physics ·A. Corrion, C. Poblenz, Feng Wu, James S. Speck	2008	43
16	220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic K. Shinohara, A. Corrion, D. Regan, I. Milosavljevic, David F. Brown, Shawn D. Burnham, P. J. Willadsen, C. Butler, A. Schmitz, D. Wheeler, A. Fung, M. Micovic	2010	43
17	Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy Journal of Applied Physics ·A. Corrion, Feng Wu, James S. Speck	2012	36
18	Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R_on E/D-mode GaN HEMTs IEEE Electron Device Letters ·Joel Wong, K. Shinohara, A. Corrion, David F. Brown, Zenon Carlos, Adam Williams, Yan Tang, John F. Robinson, Isaac Khalaf, Helen Fung, Adele Schmitz, Thomas C. Oh, Samuel Kim, Steven Chen, Shawn D. Burnham, Alex Margomenos, M. Micovic	2016	36
19	High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators IEEE Electron Device Letters ·A. Corrion, K. Shinohara, D. Regan, I. Milosavljevic, P. Hashimoto, P. J. Willadsen, A. Schmitz, S. J. Kim, C. Butler, David F. Brown, Shawn D. Burnham, M. Micovic	2011	32
20	High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz Electronics Letters ·J.S. Moon, Robert Grabar, Joel Wong, M. Antcliffe, P. Chen, Erdem Arkun, I. Khalaf, A. Corrion, James M. Chappell, Nivedhita Venkatesan, Patrick Fay	2020	31

About A. Corrion

A. Corrion is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 50 papers that have together received 2.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (49 papers), Radio Frequency Integrated Circuit Design (26 papers), Ga2O3 and related materials (25 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (10 papers), ZnO doping and properties (6 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Advanced Power Amplifier Design (4 papers). The work is most often cited by research in Condensed Matter Physics (2.0k citations), Electronic, Optical and Magnetic Materials (926 citations), Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (506 citations) and Materials Chemistry (336 citations). A. Corrion has collaborated with scholars based in United States and Taiwan. Frequent co-authors include M. Micovic, K. Shinohara, David F. Brown, D. Regan, Joel Wong, James S. Speck, Helen Fung, C. Poblenz, Adele Schmitz and Yan Tang. Their work appears in journals such as IEEE Electron Device Letters, Journal of Applied Physics, Electronics Letters, IEEE Transactions on Electron Devices and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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