L. Shen

2.3k citations

59 papers · 2.0k · h-index 21

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 43
- GaN-based semiconductor devices and materials 43
Electronic, Optical and Magnetic Materials 17
- Ga2O3 and related materials 17

Co-authors: Umesh Kumar Mishra (36 shared papers)Stacia Keller (25 shared papers)S. Heikman (20 shared papers)Steven P. DenBaars (18 shared papers)D. Buttari (17 shared papers)Robert L. Coffie (14 shared papers)I. P. Smorchkova (4 shared papers)Brendan Moran (3 shared papers)
Journals: IEEE Electron Device Letters (10 papers)Applied Physics Letters (5 papers)International Journal of Engine Research (3 papers)Electronics Letters (3 papers)physica status solidi (a) (2 papers)
Partner nations: United States China United Kingdom

In The Last Decade

L. Shen

59 papers receiving 1.9k citations

Peers

Countries citing papers authored by L. Shen

Since Specialization

Citations

This map shows the geographic impact of L. Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Shen more than expected).

Fields of papers citing papers by L. Shen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Shen. The network helps show where L. Shen may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Shen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Shen Line = papers co-authored together L. Shen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 59 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/AlN/GaN high-power microwave HEMT IEEE Electron Device Letters ·L. Shen, S. Heikman, Brendan Moran, Robert L. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, Stacia Keller	2001	430
2	AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, L. Chen, Thomas E. Mates, L. Shen, S. Heikman, Brendan Moran, Stacia Keller, Steven P. DenBaars	2001	278
3	kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz IEEE Transactions on Power Electronics ·Yifeng Wu, John Gritters, L. Shen, R.P. Smith, Brian L. Swenson	2013	108
4	High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation IEEE Electron Device Letters ·L. Shen, Robert L. Coffie, D. Buttari, S. Heikman, A. Chakraborty, Alessandro Chini, Stacia Keller, Steven P. DenBaars	2004	98
5	Gallium nitride based transistors Journal of Physics Condensed Matter ·Huili Grace Xing, Stacia Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, Robert L. Coffie, Daniel S. Green	2001	95
6	Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs IEEE Electron Device Letters ·Alessandro Chini, D. Buttari, Robert L. Coffie, L. Shen, S. Heikman, A. Chakraborty, Stacia Keller, Umesh Kumar Mishra	2004	86
7	Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters ·Stacia Keller, S. Heikman, Ilan Ben-Yaacov, L. Shen, Steven P. DenBaars, Umesh Kumar Mishra	2001	59
8	Experimental study of equivalence ratio and fuel flow rate effects on nonlinear thermoacoustic instability in a swirl combustor Applied Energy ·He Zhao, Guoneng Li, Dan Zhao, Zhiguo Zhang, Dakun Sun, Wenming Yang, L. Shen, Zhengli Lu	2017	59
9	Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs IEEE Transactions on Nuclear Science ·Aditya Kalavagunta, A. Touboul, L. Shen, Ronald Schrimpf, Robert A. Reed, Daniel M Fleetwood, Rajeev Kumar Jain, Umesh Kumar Mishra	2008	57
10	Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment IEEE Electron Device Letters ·L. Shen, Tomás Palacios, Christiane Poblenz, Andrea L. Corrion, A. Chakraborty, Nicholas A. Fichtenbaum, Stacia Keller, Steven P. DenBaars	2006	57
11	p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) IEEE Electron Device Letters ·Robert L. Coffie, D. Buttari, S. Heikman, Stacia Keller, Alessandro Chini, L. Shen, Umesh Kumar Mishra	2002	56
12	Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs IEEE Electron Device Letters ·D. Buttari, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni, Brendan Moran, S. Heikman, N.Q. Zhang, L. Shen	2002	46
13	Performance and robustness of first generation 600-V GaN-on-Si power transistors Yifeng Wu, John Gritters, L. Shen, R.P. Smith, J. McKay, Ron Barr, Ron Birkhahn	2013	39
14	SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL 3/ SF 6 MIXTURES International Journal of High Speed Electronics and Systems ·D. Buttari, Alessandro Chini, A. Chakraborty, L. McCarthy, Huili Grace Xing, Tomás Palacios, L. Shen, Stacia Keller	2004	36
15	GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design Applied Physics Letters ·Stacia Keller, S. Heikman, L. Shen, I. P. Smorchkova, Steven P. DenBaars, Umesh Kumar Mishra	2002	35
16	Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs IEEE Electron Device Letters ·D. Buttari, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni, P. Chavarkar, Robert L. Coffie, N.Q. Zhang, S. Heikinan	2002	34
17	Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters ·Tomás Palacios, L. Shen, Stacia Keller, A. Chakraborty, S. Heikman, Steven P. DenBaars, Umesh Kumar Mishra, J. Liberis	2006	32
18	Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs IEEE Transactions on Nuclear Science ·Aditya Kalavagunta, Marco Silvestri, Matthew J. Beck, Sriram K. Dixit, Ronald Schrimpf, Robert A. Reed, Daniel M Fleetwood, L. Shen	2009	29
19	Identifying the crack path for the phase field approach to fracture with non-maximum suppression Computer Methods in Applied Mechanics and Engineering ·Vahid Ziaei‐Rad, L. Shen, Jiahao Jiang, Yongxing Shen	2016	25
20	Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters ·Haijiang Yu, L. McCarthy, Huili Grace Xing, Patrick Waltereit, L. Shen, Stacia Keller, Steven P. DenBaars, James S. Speck	2004	24

About L. Shen

L. Shen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Fluid Flow and Transfer Processes and Computational Mechanics, having authored 59 papers that have together received 2.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Ga2O3 and related materials (17 papers), Semiconductor materials and devices (17 papers), ZnO doping and properties (13 papers), Silicon Carbide Semiconductor Technologies (10 papers), Radio Frequency Integrated Circuit Design (10 papers), Semiconductor Quantum Structures and Devices (9 papers) and Advanced Combustion Engine Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (816 citations), Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (441 citations) and Materials Chemistry (510 citations). L. Shen has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Umesh Kumar Mishra, Stacia Keller, S. Heikman, Steven P. DenBaars, D. Buttari, Robert L. Coffie, I. P. Smorchkova, Brendan Moran, Alessandro Chini and James S. Speck. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, International Journal of Engine Research, Electronics Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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