M. Micovic

4.8k citations
127 papers · 3.9k · 1 hit paper · h-index 37

Impact in

Papers in

  • Electrical and Electronic Engineering 120
    • Radio Frequency Integrated Circuit Design 75
    • Semiconductor materials and devices 32
    • Silicon Carbide Semiconductor Technologies 17
    • Semiconductor Lasers and Optical Devices 15
    • Advanced Power Amplifier Design 13
  • Condensed Matter Physics 84
    • GaN-based semiconductor devices and materials 83
Co-authors
P. Hashimoto (43 shared papers)David F. Brown (32 shared papers)K. Shinohara (28 shared papers)D. Regan (23 shared papers)Ming Hu (30 shared papers)A. Kurdoghlian (33 shared papers)A. Corrion (23 shared papers)Wei-Ting Wong (19 shared papers)
Journals
IEEE Electron Device Letters (13 papers)Electronics Letters (10 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Crystal Growth (3 papers)
Partner nations
United StatesCanadaItaly

In The Last Decade

M. Micovic

124 papers receiving 3.6k citations

M. Micovic's Hit Papers

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications 2013 · 395 citations
3950+4+8Years since publication100200300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

  • it has ≥500 total citations;
  • it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
  • it reaches the top citation threshold in at least one of its specific research topics.
  1. 2013 IEEE Transactions on Electron Devices

Peers

M. Micovic
Comparison fields: 5 of 47
  • Condensed Matter Physics 2.7k
  • Electrical and Electronic Engineering 3.2k
  • Electronic, Optical and Magnetic Materials 990
  • Atomic and Molecular Physics, and Optics 1.2k
  • Materials Chemistry 448
Replace C. Skierbiszewski with:
C. Skierbiszewski Poland
B. E. Foutz United States
C. R. Bolognesi Switzerland
S.C. Binari United States
Francesco Bertazzi Italy
M. Mikulla Germany
B. Roas Germany
G.J. Sullivan United States
C. E. Stutz United States
R.G. Humphreys United Kingdom
M. Micovic relative to C. Skierbiszewski Poland C. Skierbiszewski's profile →
Citations per field
00.5×1.5×2.1×
C. Skierbiszewski · 1×
Citations per year

Countries citing papers authored by M. Micovic

Since Specialization
Citations

This map shows the geographic impact of M. Micovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Micovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Micovic more than expected).

Fields of papers citing papers by M. Micovic

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Micovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Micovic. The network helps show where M. Micovic may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Micovic, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Micovic Line = papers co-authored together M. Micovic links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 127 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
IEEE Transactions on Electron Devices ·K. Shinohara, D. Regan, Yan Tang, A. Corrion, David F. Brown, Joel Wong, John F. Robinson, Helen Fung, Adele Schmitz, Thomas C. Oh, Samuel Jungjin Kim, Peter S. Chen, Robert G. Nagele, A. Margomenos, M. Micovic
Hit paper breakdown →		2013395
2
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz
IEEE Electron Device Letters ·Yan Tang, K. Shinohara, D. Regan, A. Corrion, David F. Brown, Joel Wong, Adele Schmitz, Helen Fung, Samuel Kim, M. Micovic
2015224
3
Highly Efficient Light-Emitting Diodes with Microcavities
Science ·E. F. Schubert, N. E. J. Hunt, M. Micovic, R. J. Malik, D.L. Sivco, A. Y. Cho, G. J. Zydzik
1994210
4
Temperature and modulation characteristics of resonant-cavity light-emitting diodes
Journal of Lightwave Technology ·E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic, D. L. Miller
1996108
5
Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
Physical review. B, Condensed matter ·Lucia Sorba, Gvido Bratina, Giacomo Ceccone, Alessandro Antonini, J. F. Walker, M. Micovic, A. Franciosi
1991104
6
Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
IEEE Electron Device Letters ·J.S. Moon, Shihchang Wu, D. Wong, I. Milosavljevic, Adam Conway, P. Hashimoto, Ming Hu, M. Antcliffe, M. Micovic
2005103
7
GaN/AlGaN high electron mobility transistors withf τ of 110 GHz
Electronics Letters ·M. Micovic, Nam Nguyen, P. Janke, Wei-Ting Wong, P. Hashimoto, L. McCray, C. Nguyen
200094
8
55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge
IEEE Electron Device Letters ·J. S. Moon, D. Wong, Ming Hu, P. Hashimoto, M. Antcliffe, C. McGuire, M. Micovic, P. Willadson
200889
9
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
K. Shinohara, D. Regan, A. Corrion, David F. Brown, Shawn D. Burnham, P. J. Willadsen, I. Alvarado-Rodriguez, M. Cunningham, C. Butler, A. Schmitz, S. Kim, Brian Holden, David T. Chang, V. Lee, Atsushi Ohoka, P.M. Asbeck, M. Micovic
201187
10
High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE
Electronics Letters ·Nam Nguyen, M. Micovic, Wei-Ting Wong, P. Hashimoto, L. McCray, P. Janke, C. Nguyen
200086
11
92&#x2013;96 GHz GaN power amplifiers
M. Micovic, A. Kurdoghlian, A. Margomenos, David F. Brown, K. Shinohara, Shawn D. Burnham, I. Milosavljevic, R. Bowen, Andrew Williams, P. Hashimoto, Robert Grabar, C. Butler, A. Schmitz, P. J. Willadsen, D. H. Chow
201284
12
GaN Technology for E, W and G-Band Applications
A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, David F. Brown, A. Corrion, H. P. Moyer, Shawn D. Burnham, D. Regan, Robert Grabar, C. McGuire, Meredith Wetzel, R. Bowen, P. S. Chen, Haw Tai, A. Schmitz, Helen Fung, A. Fung, D. H. Chow
201480
13
GaN HFET for W-band Power Applications
M. Micovic, A. Kurdoghlian, P. Hashimoto, Ming Hu, M. Antcliffe, P. J. Willadsen, Wei-Ting Wong, R. Bowen, I. Milosavljevic, A. Schmitz, Meredith Wetzel, D. H. Chow
200675
14
GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications
M. Micovic, P. Hashimoto, Ming Hu, I. MilosavIjevic, J. Duvall, P. J. Willadsen, Wei-Ting Wong, Adam Conway, A. Kurdoghlian, Peter W. Deelman, Jeong‐Sun Moon, A. Schmitz, M.J. Delaney
200573
15
High frequency GaN HEMTs for RF MMIC applications
M. Micovic, David F. Brown, D. Regan, Joel Wong, Yixi Tang, Florian Herrault, D. Santos, Shawn D. Burnham, Joe Tai, Eric Prophet, I. Khalaf, C. McGuire, Hector Bracamontes, Helen Fung, A. Kurdoghlian, A. Schmitz
201669
16
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
IEEE Electron Device Letters ·K. Shinohara, D. Regan, I. Milosavljevic, A. Corrion, David F. Brown, P. J. Willadsen, C. Butler, A. Schmitz, S. Kim, V. Lee, Atsushi Ohoka, P.M. Asbeck, M. Micovic
201169
17
Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Shawn D. Burnham, K. S. Boutros, P. Hashimoto, C. Butler, Danny W. Wong, Ming Hu, M. Micovic
201065
18
GaN enhancement/depletion-mode FET logic for mixed signal applications
Electronics Letters ·M. Micovic, T. Tsen, Ming Hu, P. Hashimoto, P. J. Willadsen, I. Milosavljevic, A. Schmitz, M. Antcliffe, D. Zhender, J.S. Moon, Wei-Ting Wong, D. H. Chow
200561
19
W-Band GaN MMIC with 842 mW output power at 88 GHz
2010 IEEE MTT-S International Microwave Symposium ·M. Micovic, A. Kurdoghlian, K. Shinohara, Shawn D. Burnham, I. Milosavljevic, Ming Hu, A. Corrion, A. Fung, R. Lin, Lorene Samoska, Pekka Kangaslahti, Bjorn Lambrigtsen, P. F. Goldsmith, Wei-Ting Wong, A. Schmitz, P. Hashimoto, P. J. Willadsen, D. H. Chow
201061
20
W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE
David F. Brown, Andrew Williams, K. Shinohara, A. Kurdoghlian, I. Milosavljevic, P. Hashimoto, Robert Grabar, Shawn D. Burnham, C. Butler, P. J. Willadsen, M. Micovic
201161

About M. Micovic

M. Micovic is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 127 papers that have together received 3.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (83 papers), Radio Frequency Integrated Circuit Design (75 papers), Semiconductor Quantum Structures and Devices (53 papers), Semiconductor materials and devices (32 papers), Ga2O3 and related materials (21 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Lasers and Optical Devices (15 papers) and Advanced Power Amplifier Design (13 papers). The work is most often cited by research in Condensed Matter Physics (2.7k citations), Electrical and Electronic Engineering (3.2k citations), Electronic, Optical and Magnetic Materials (990 citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Materials Chemistry (448 citations). M. Micovic has collaborated with scholars based in United States, Canada and Italy. Frequent co-authors include P. Hashimoto, David F. Brown, K. Shinohara, D. Regan, Ming Hu, A. Kurdoghlian, A. Corrion, Wei-Ting Wong, P. J. Willadsen and A. Schmitz. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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