L. McCarthy

1.8k citations

50 papers · 1.6k · 1 hit paper · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 47
- GaN-based semiconductor devices and materials 47
Electrical and Electronic Engineering 42
- Semiconductor materials and devices 31
- Silicon Carbide Semiconductor Technologies 15
- Radio Frequency Integrated Circuit Design 11

Co-authors: Umesh Kumar Mishra (40 shared papers)Steven P. DenBaars (25 shared papers)Stacia Keller (24 shared papers)A. Chakraborty (8 shared papers)Yuvaraj Dora (4 shared papers)James S. Speck (16 shared papers)Huili Grace Xing (16 shared papers)Mark J. W. Rodwell (5 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (6 papers)Electronics Letters (3 papers)Japanese Journal of Applied Physics (3 papers)physica status solidi (a) (2 papers)
Partner nations: United States Australia Germany

In The Last Decade

L. McCarthy

48 papers receiving 1.5k citations

L. McCarthy's Hit Papers

align trajectories log scale

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates 2006 · 384 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2006 IEEE Electron Device Letters

Peers

Countries citing papers authored by L. McCarthy

Since Specialization

Citations

This map shows the geographic impact of L. McCarthy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. McCarthy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. McCarthy more than expected).

Fields of papers citing papers by L. McCarthy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. McCarthy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. McCarthy. The network helps show where L. McCarthy may publish in the future.

Co-authors

The 25 scholars most cited alongside L. McCarthy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. McCarthy Line = papers co-authored together L. McCarthy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 50 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates IEEE Electron Device Letters ·Yuvaraj Dora, A. Chakraborty, L. McCarthy, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra Hit paper breakdown →	2006	384
2	AlGaN/GaN heterojunction bipolar transistor IEEE Electron Device Letters ·L. McCarthy, P. Kozodoy, Mark J. W. Rodwell, Steven P. DenBaars, Umesh Kumar Mishra	1999	104
3	Gallium nitride based transistors Journal of Physics Condensed Matter ·Huili Grace Xing, Stacia Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, Robert L. Coffie, Daniel S. Green	2001	95
4	Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts IEEE Electron Device Letters ·Haijiang Yu, L. McCarthy, Siddharth Rajan, Stacia Keller, Steven P. DenBaars, James S. Speck, Umesh Kumar Mishra	2005	85
5	Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures Applied Physics Letters ·D. Buttari, Alessandro Chini, Tomás Palacios, Robert L. Coffie, Lingyan Shen, Huili Grace Xing, S. Heikman, L. McCarthy	2003	76
6	Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature IEEE Electron Device Letters ·Felix Recht, L. McCarthy, Siddharth Rajan, A. Chakraborty, Christiane Poblenz, Andrea L. Corrion, James S. Speck, Umesh Kumar Mishra	2006	75
7	GaN HBT: toward an RF device IEEE Transactions on Electron Devices ·L. McCarthy, I. P. Smorchkova, Huili Grace Xing, P. Kozodoy, P. Fini, J. Limb, David L. Pulfrey, James S. Speck	2001	70
8	Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters ·Man Hoi Wong, Yi Pei, Tomás Palacios, Likun Shen, Arpan Chakraborty, L. McCarthy, Stacia Keller, Steven P. DenBaars	2007	69
9	Effect of ohmic contacts on buffer leakage of GaN transistors IEEE Electron Device Letters ·Yuvaraj Dora, A. Chakraborty, S. Heikman, L. McCarthy, Stacia Keller, Steven P. DenBaars, Umesh Kumar Mishra	2006	53
10	Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN IEEE Electron Device Letters ·Rongming Chu, Chang Soo Suh, Man Hoi Wong, Nicholas A. Fichtenbaum, David F. Brown, L. McCarthy, Stacia Keller, Feng Wu	2007	47
11	600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates Toshihide Kikkawa, Tsutomu Hosoda, Kenji Imanishi, Ken Shono, Kazuo Itabashi, T. Ogino, Yasumori Miyazaki, Akitoshi Mochizuki	2014	40
12	SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL 3/ SF 6 MIXTURES International Journal of High Speed Electronics and Systems ·D. Buttari, Alessandro Chini, A. Chakraborty, L. McCarthy, Huili Grace Xing, Tomás Palacios, L. Shen, Stacia Keller	2004	36
13	AlGaN/GaN HBTs using regrown emitter Electronics Letters ·J. Limb, L. McCarthy, P. Kozodoy, Huili Grace Xing, James P. Ibbetson, Yulia P. Smorchkova, Steven P. DenBaars, Umesh Kumar Mishra	1999	33
14	Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters ·L. McCarthy, I. P. Smorchkova, Huili Grace Xing, P. Fini, Stacia Keller, James S. Speck, Steven P. DenBaars, Mark J. W. Rodwell	2001	33
15	High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate Chang Soo Suh, Yuvaraj Dora, Nicholas A. Fichtenbaum, L. McCarthy, Stacia Keller, Umesh Kumar Mishra	2006	32
16	Commercialization and reliability of 600 V GaN power switches Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, Yifeng Wu, Likun Shen, Kurt V. Smith	2015	31
17	High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage Applied Physics Letters ·J. Limb, Huili Grace Xing, Brendan Moran, L. McCarthy, Steven P. DenBaars, Umesh Kumar Mishra	2000	29
18	N‐face high electron mobility transistors with a GaN‐spacer physica status solidi (a) ·Man Hoi Wong, Siddharth Rajan, Rongming Chu, Tomás Palacios, Chang Soo Suh, L. McCarthy, Stacia Keller, James S. Speck	2007	28
19	Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters ·Haijiang Yu, L. McCarthy, Huili Grace Xing, Patrick Waltereit, L. Shen, Stacia Keller, Steven P. DenBaars, James S. Speck	2004	24
20	DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion IEEE Electron Device Letters ·Chuanxin Lian, Huili Xing, C.S. Wang, L. McCarthy, David F. Brown	2007	23

About L. McCarthy

L. McCarthy is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 50 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (31 papers), Silicon Carbide Semiconductor Technologies (15 papers), Radio Frequency Integrated Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Metal and Thin Film Mechanics (9 papers), Ga2O3 and related materials (8 papers) and ZnO doping and properties (6 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (622 citations), Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (396 citations) and Mechanics of Materials (206 citations). L. McCarthy has collaborated with scholars based in United States, Australia and Germany. Frequent co-authors include Umesh Kumar Mishra, Steven P. DenBaars, Stacia Keller, A. Chakraborty, Yuvaraj Dora, James S. Speck, Huili Grace Xing, Mark J. W. Rodwell, P. Kozodoy and Tomás Palacios. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Electronics Letters, Japanese Journal of Applied Physics and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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