L. McCarthy

1.8k citations

47 papers · 1.4k · 1 hit paper · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 45
- GaN-based semiconductor devices and materials 45
Electrical and Electronic Engineering 41
- Semiconductor materials and devices 30
- Silicon Carbide Semiconductor Technologies 14
- Radio Frequency Integrated Circuit Design 11

Co-authors: Umesh K. Mishra (40 shared papers)Steven P. DenBaars (25 shared papers)S. Keller (24 shared papers)A. Chakraborty (8 shared papers)Y. Dora (4 shared papers)James S. Speck (16 shared papers)Huili Grace Xing (16 shared papers)M.J.W. Rodwell (5 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Applied Physics Letters (6 papers)Japanese Journal of Applied Physics (3 papers)Electronics Letters (3 papers)Journal of Electronic Materials (2 papers)
Partner nations: United States Australia Germany

In The Last Decade

L. McCarthy

45 papers receiving 1.4k citations

L. McCarthy's Hit Papers

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates 2006 · 367 citations

Peers

Countries citing papers authored by L. McCarthy

Since Specialization

Citations

This map shows the geographic impact of L. McCarthy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. McCarthy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. McCarthy more than expected).

Fields of papers citing papers by L. McCarthy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. McCarthy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. McCarthy. The network helps show where L. McCarthy may publish in the future.

Co-authors

The 25 scholars most cited alongside L. McCarthy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. McCarthy Line = papers co-authored together L. McCarthy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 47 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates IEEE Electron Device Letters ·Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, Steven P. DenBaars, Umesh K. Mishra Hit paper breakdown →	2006	367
2	AlGaN/GaN heterojunction bipolar transistor IEEE Electron Device Letters ·L. McCarthy, P. Kozodoy, M.J.W. Rodwell, Steven P. DenBaars, Umesh K. Mishra	1999	102
3	Gallium nitride based transistors Journal of Physics Condensed Matter ·Huili Grace Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, Daniel S. Green, Giacinta Parish, S. Heikman, L. Shen, N Zhang, Jin Xu, B.P. Keller, Steven P. DenBaars, Umesh K. Mishra	2001	90
4	Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts IEEE Electron Device Letters ·Haijiang Yu, L. McCarthy, Siddharth Rajan, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2005	82
5	Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature IEEE Electron Device Letters ·F. Recht, L. McCarthy, Siddharth Rajan, A. Chakraborty, C. Poblenz, A. Corrion, James S. Speck, Umesh K. Mishra	2006	71
6	Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures Applied Physics Letters ·D. Buttari, Alessandro Chini, Tomás Palacios, R. Coffie, Lingyan Shen, Huili Grace Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, U. K. Mishra	2003	70
7	Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters ·Man Hoi Wong, Yi Pei, Tomás Palacios, Likun Shen, Arpan Chakraborty, L. McCarthy, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2007	66
8	GaN HBT: toward an RF device IEEE Transactions on Electron Devices ·L. McCarthy, I. P. Smorchkova, Huili Grace Xing, P. Kozodoy, P. Fini, J. Limb, D.L. Pulfrey, James S. Speck, M.J.W. Rodwell, Steven P. DenBaars, Umesh K. Mishra	2001	65
9	Effect of ohmic contacts on buffer leakage of GaN transistors IEEE Electron Device Letters ·Y. Dora, A. Chakraborty, S. Heikman, L. McCarthy, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2006	53
10	Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN IEEE Electron Device Letters ·Rongming Chu, Chang Soo Suh, Man Hoi Wong, N. Fichtenbaum, David F. Brown, L. McCarthy, S. Keller, Feng Wu, James S. Speck, Umesh K. Mishra	2007	47
11	AlGaN/GaN HBTs using regrown emitter Electronics Letters ·J. Limb, L. McCarthy, P. Kozodoy, Huili Grace Xing, J. P. Ibbetson, Y. Smorchkova, Steven P. DenBaars, Umesh K. Mishra	1999	34
12	SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL₃/SF₆ MIXTURES International Journal of High Speed Electronics and Systems ·D. Buttari, Alessandro Chini, A. Chakraborty, L. McCarthy, Huili Grace Xing, Tomás Palacios, L. Shen, S. Keller, Umesh K. Mishra	2004	34
13	Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters ·L. McCarthy, I. P. Smorchkova, Huili Grace Xing, P. Fini, S. Keller, James S. Speck, Steven P. DenBaars, M.J.W. Rodwell, Umesh K. Mishra	2001	32
14	Commercialization and reliability of 600 V GaN power switches T. Kikkawa, Tsutomu Hosoda, K. Shono, Kenji Imanishi, Yoshimori Asai, Yifeng Wu, Likun Shen, Kurt V. Smith, Dixie Dunn, S. Chowdhury, Peter Smith, J. Gritters, L. McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, P. Parikh	2015	29
15	High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage Applied Physics Letters ·J. Limb, Huili Grace Xing, Brendan Moran, L. McCarthy, Steven P. DenBaars, Umesh K. Mishra	2000	29
16	High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate Chang Soo Suh, Y. Dora, N. Fichtenbaum, L. McCarthy, S. Keller, Umesh K. Mishra	2006	28
17	N‐face high electron mobility transistors with a GaN‐spacer physica status solidi (a) ·Man Hoi Wong, Siddharth Rajan, Rongming Chu, Tomás Palacios, Chang Soo Suh, L. McCarthy, S. Keller, James S. Speck, Umesh K. Mishra	2007	27
18	Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters ·Haijiang Yu, L. McCarthy, Huili Grace Xing, Patrick Waltereit, L. Shen, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2004	24
19	DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion IEEE Electron Device Letters ·Chuanxin Lian, Huili Xing, C.S. Wang, L. McCarthy, David F. Brown	2007	22
20	Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors Electronics Letters ·L. McCarthy, I. P. Smorchkova, P. Fini, M.J.W. Rodwell, James S. Speck, Steven P. DenBaars, Umesh K. Mishra	2002	13

About L. McCarthy

L. McCarthy is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 47 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (30 papers), Silicon Carbide Semiconductor Technologies (14 papers), Radio Frequency Integrated Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Metal and Thin Film Mechanics (9 papers), Ga2O3 and related materials (8 papers) and ZnO doping and properties (6 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (590 citations), Electrical and Electronic Engineering (1.0k citations), Atomic and Molecular Physics, and Optics (358 citations) and Mechanics of Materials (205 citations). L. McCarthy has collaborated with scholars based in United States, Australia and Germany. Frequent co-authors include Umesh K. Mishra, Steven P. DenBaars, S. Keller, A. Chakraborty, Y. Dora, James S. Speck, Huili Grace Xing, M.J.W. Rodwell, P. Kozodoy and Siddharth Rajan. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Japanese Journal of Applied Physics, Electronics Letters and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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