Éric Frayssinet

2.1k citations

131 papers · 1.7k · h-index 23

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 118
- GaN-based semiconductor devices and materials 118
Electrical and Electronic Engineering 72
- Semiconductor materials and devices 47
- Silicon Carbide Semiconductor Technologies 13

Co-authors: Y. Cordier (67 shared papers)W. Knap (17 shared papers)B. Beaumont (17 shared papers)F. Sèmond (21 shared papers)P. Gibart (13 shared papers)Sébastien Chenot (23 shared papers)I. Grzegory (9 shared papers)S. Porowski (10 shared papers)
Journals: Journal of Crystal Growth (13 papers)Applied Physics Letters (12 papers)physica status solidi (a) (11 papers)Journal of Applied Physics (6 papers)physica status solidi (b) (5 papers)
Partner nations: France Poland United States

In The Last Decade

Éric Frayssinet

126 papers receiving 1.7k citations

Peers

Countries citing papers authored by Éric Frayssinet

Since Specialization

Citations

This map shows the geographic impact of Éric Frayssinet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Éric Frayssinet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Éric Frayssinet more than expected).

Fields of papers citing papers by Éric Frayssinet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Éric Frayssinet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Éric Frayssinet. The network helps show where Éric Frayssinet may publish in the future.

Co-authors

The 25 scholars most cited alongside Éric Frayssinet, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Éric Frayssinet Line = papers co-authored together Éric Frayssinet links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 131 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates Applied Physics Letters ·Éric Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaška, D. K. Maude	2000	115
2	GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates Applied Physics Letters ·M. Asif Khan, J. Yang, W. Knap, Éric Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, R. Gaška, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu	2000	88
3	Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy Applied Physics Letters ·T. D. Veal, P. D. C. King, S. A. Hatfield, L. R. Bailey, C. F. McConville, Bernard Martel, J. C. Moreno, Éric Frayssinet, F. Sèmond, J. Zúñiga‐Pérez	2008	83
4	Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy MRS Internet Journal of Nitride Semiconductor Research ·Éric Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart, Zs. Makkai, B. Pécz, Pierre Lefèbvre, P. Valvin	2002	67
5	Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures Applied Physics Letters ·W. Knap, E. Borovitskaya, M. S. Shur, Leon Hsu, W. Walukiewicz, Éric Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewski, P. Prystawko, M. Leszczyński, I. Grzegory	2002	46
6	High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density Japanese Journal of Applied Physics ·D. Gogova, Henrik Larsson, A. Kasic, G. Reza Yazdi, Ivan G. Ivanov, Rositza Yakimova, Bo Monemar, E. Aujol, Éric Frayssinet, Jean‐Pierre Faurie, B. Beaumont, P. Gibart	2005	46
7	Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption Physical Review B ·François Médard, J. Zúñiga‐Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, Fabrice Semond, Éric Frayssinet, J. C. Moreno, M. Leroux, Stéphane Faure, T. Guillet	2009	46
8	Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110) IEEE Electron Device Letters ·Y. Cordier, Jean-Christophe Moreno, Nicolas Baron, Éric Frayssinet, Sébastien Chenot, B. Damilano, Fabrice Semond	2008	44
9	Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Éric Frayssinet, Y. Cordier, H. P. D. Schenk, Alexis Bavard	2011	41
10	Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission physica status solidi (a) ·Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, Éric Frayssinet, P. Gibart, M. Leroux	2007	41
11	Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition Journal of Crystal Growth ·H. P. D. Schenk, Éric Frayssinet, Alexis Bavard, D. Rondi, Y. Cordier, M. Kennard	2010	39
12	Doping of Homoepitaxial GaN Layers physica status solidi (b) ·P. Prystawko, M. Leszczyński, B. Beaumont, P. Gibart, Éric Frayssinet, W. Knap, P. Wiśniewski, Michał Boćkowski, T. Suski, S. Porowski	1998	38
13	Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions Applied Physics Letters ·W. Knap, Éric Frayssinet, M. L. Sadowski, C. Skierbiszewski, D. K. Maude, Vladimir I. Fal’ko, M. Asif Khan, M. S. Shur	1999	38
14	High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors ACS Applied Electronic Materials ·Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, S. Ravesi, Éric Frayssinet, Adrien Michon, Y. Cordier	2019	38
15	Imaging and counting threading dislocations in c-oriented epitaxial GaN layers Semiconductor Science and Technology ·Mario El Khoury, Aimeric Courville, B Poulet, M. Teisseire, Emmanuel Beraudo, M. J. Rashid, Éric Frayssinet, B. Damilano, F. Sèmond, O. Tottereau, P. Vennéguès	2013	36
16	Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet Journal of Applied Physics ·J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schühle, Éric Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart	2004	35
17	GaN homoepitaxial layers grown by metalorganic chemical vapor deposition Applied Physics Letters ·M. Leszczyński, B. Beaumont, Éric Frayssinet, W. Knap, P. Prystawko, T. Suski, I. Grzegory, S. Porowski	1999	35
18	Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals Journal of Crystal Growth ·Éric Frayssinet, W. Knap, Stanisław Krukowski, P. Perlin, P. Wiśniewski, T. Suski, I. Grzegory, S. Porowski	2001	28
19	Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon physica status solidi (a) ·Y. Cordier, Rémi Comyn, Éric Frayssinet, Mario Khoury, Marie Lesecq, N. Defrance, Jean-Claude de Jaeger	2017	25
20	Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies Scientific Reports ·Micka Bah, Damien Valente, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Jean-Claude de Jaeger, Éric Frayssinet, Rémi Comyn, Thi Huong Ngo, Daniel Alquier, Y. Cordier	2020	25

About Éric Frayssinet

Éric Frayssinet is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 131 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (118 papers), Ga2O3 and related materials (53 papers), Semiconductor materials and devices (47 papers), Semiconductor Quantum Structures and Devices (21 papers), ZnO doping and properties (21 papers), Metal and Thin Film Mechanics (17 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Photocathodes and Microchannel Plates (13 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (671 citations), Atomic and Molecular Physics, and Optics (548 citations), Electrical and Electronic Engineering (811 citations) and Materials Chemistry (647 citations). Éric Frayssinet has collaborated with scholars based in France, Poland and United States. Frequent co-authors include Y. Cordier, W. Knap, B. Beaumont, F. Sèmond, P. Gibart, Sébastien Chenot, I. Grzegory, S. Porowski, B. Damilano and M. S. Shur. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, physica status solidi (a), Journal of Applied Physics and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Éric Frayssinet

Impact in

Papers in i

In The Last Decade

Éric Frayssinet

Peers

Countries citing papers authored by Éric Frayssinet

Fields of papers citing papers by Éric Frayssinet

All Works

About Éric Frayssinet

Explore authors with similar magnitude of impact

Papers in