C. McGuire

1.1k citations

22 papers · 911 · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices

Papers in

Electrical and Electronic Engineering 19
- Radio Frequency Integrated Circuit Design 14
- Silicon Carbide Semiconductor Technologies 5
- Advanced Power Amplifier Design 2
Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 15

Co-authors: J. S. Moon (8 shared papers)D. Wong (9 shared papers)Ming Hu (8 shared papers)D. Kurt Gaskill (5 shared papers)P. M. Campbell (4 shared papers)M. Micovic (12 shared papers)Glenn G. Jernigan (3 shared papers)Brenda L. VanMil (3 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Electronics Letters (2 papers)IEEE Microwave and Wireless Components Letters (1 paper)ECS Transactions (1 paper)
Partner nations: United States

In The Last Decade

C. McGuire

21 papers receiving 838 citations

Peers

Countries citing papers authored by C. McGuire

Since Specialization

Citations

This map shows the geographic impact of C. McGuire's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. McGuire with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. McGuire more than expected).

Fields of papers citing papers by C. McGuire

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. McGuire. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. McGuire. The network helps show where C. McGuire may publish in the future.

Co-authors

The 25 scholars most cited alongside C. McGuire, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. McGuire Line = papers co-authored together C. McGuire links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates IEEE Electron Device Letters ·J. S. Moon, Daniel J. Curtis, Ming Hu, D. Wong, C. McGuire, P. M. Campbell, Glenn G. Jernigan, J. L. Tedesco, Brenda L. VanMil, Rachael L. Myers‐Ward, (unknown), D. Kurt Gaskill	2009	322
2	55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge IEEE Electron Device Letters ·J. S. Moon, D. Wong, Ming Hu, P. Hashimoto, M. Antcliffe, C. McGuire, M. Micovic, P. Willadson	2008	94
3	GaN Technology for E, W and G-Band Applications A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, David F. Brown, A. Corrion, H. P. Moyer, Shawn D. Burnham, D. Regan, Robert Grabar, C. McGuire, Meredith Wetzel, R. Bowen, P. S. Chen, Haw Tai, A. Schmitz, Helen Fung, A. Fung, D. H. Chow	2014	84
4	High frequency GaN HEMTs for RF MMIC applications M. Micovic, David F. Brown, D. Regan, Joel Wong, Yixi Tang, Florian Herrault, D. Santos, Shawn D. Burnham, Joe Tai, Eric Prophet, I. Khalaf, C. McGuire, Hector Bracamontes, Helen Fung, A. Kurdoghlian, A. Schmitz	2016	75
5	Graphene FETs for Zero-Bias Linear Resistive FET Mixers IEEE Electron Device Letters ·J. S. Moon, H.-C. Seo, M. Antcliffe, Van Doan Le, C. McGuire, A. Schmitz, Luke O. Nyakiti, D. Kurt Gaskill, P. M. Campbell, K.-M. Lee, P.M. Asbeck	2013	50
6	GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, Ming Hu, M. Antcliffe, P. J. Willadsen, Wei-Ting Wong, R. Bowen, I. Milosavljevic, Yeong Yoon, A. Schmitz, Meredith Wetzel, C. McGuire, B. Hughes, D. H. Chow	2008	42
7	Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection IEEE Electron Device Letters ·J. S. Moon, HC Seo, M. Antcliffe, Stanley Lin, C. McGuire, D. Pre le, Luke O. Nyakiti, D. Kurt Gaskill, P. M. Campbell, Kyung‐Mi Lee, P.M. Asbeck	2012	40
8	>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning IEEE Electron Device Letters ·J. S. Moon, Robert Grabar, David F. Brown, I. Alvarado-Rodriguez, D. Wong, A. Schmitz, Helen Fung, P. Chen, Jongchan Kang, S. Kim, Thomas C. Oh, C. McGuire	2016	39
9	Normally-off 5A/1100V GaN-on-silicon device for high voltage applications K. S. Boutros, Shawn D. Burnham, D. Wong, K. Shinohara, B. Hughes, Daniel Zehnder, C. McGuire	2009	31
10	Epitaxial Graphene Growth on SiC Wafers ECS Transactions ·D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L. Tedesco, James C. Culbertson, Brenda L. VanMil, R.L. Myers-Ward, (unknown), J. S. Moon, Daniel J. Curtis, Ming Hu, D. Wong, C. McGuire, Joshua A. Robinson, Mark A. Fanton, T. Stitt, T. Stitt, David W. Snyder, Xuelin Wang, Eric Frantz	2009	29
11	W-Band Sb-Diode Detector MMICs for Passive Millimeter Wave Imaging IEEE Microwave and Wireless Components Letters ·H. P. Moyer, J. N. Schulman, J.J. Lynch, James H. Schaffner, M. Sokolich, Y. Royter, R. Bowen, C. McGuire, Mengyun Hu, A. Schmitz	2008	20
12	Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs IEEE Electron Device Letters ·Jeong‐Sun Moon, D. Wong, P. Hashimoto, Ming Hu, I. Milosavljevic, P. J. Willadsen, C. McGuire, Shawn D. Burnham, M. Micovic, Meredith Wetzel, D. H. Chow	2011	18
13	High efficiency X-band class-E GaN MMIC high-power amplifiers J. S. Moon, H. P. Moyer, P.A. Macdonald, D. Wong, M. Antcliffe, Ming Hu, P. J. Willadsen, P. Hashimoto, C. McGuire, M. Micovic, Meredith Wetzel, D. H. Chow	2012	18
14	W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, H. P. Moyer, D. Regan, Robert Grabar, C. McGuire, Mike Wetzel, D. H. Chow	2014	18
15	Ultra‐wideband, high‐dynamic range, low loss GaN HEMT mixer Electronics Letters ·Jihoon Kang, A. Kurdoghlian, A. Margomenos, H. P. Moyer, Dave Brown, C. McGuire	2014	10
16	X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management A. Margomenos, M. Micovic, A. Kurdoghlian, K. Shinohara, David F. Brown, C. Butler, R. Bowen, Meredith Wetzel, C. McGuire, I. Milosavljevic, Robert Grabar, D. H. Chow	2013	10
17	Wafer-level packaging method incorporating embedded thermal management for GaN-based RF front-ends A. Margomenos, Florian Herrault, Eric Prophet, M. Micovic, M. Yajima, C. Butler, K. Shinohara, David F. Brown, A. Corrion, A. Kurdoghlian, R. Bowen, Mike Wetzel, C. McGuire, Robert Grabar, D. H. Chow	2014	4
18	High Frequency GaN HEMTs for RF MMIC Applications M. Micovic, David F. Brown, D. Regan, Joel Wong, Yixi Tang, Florian Herrault, D. Santos, Shawn D. Burnham, Joe Tai, Eric Prophet, I. Khalaf, C. McGuire, Hector Bracamontes, Helen Fung, A. Schmitz	2017	3
19	Multilayer, low‐parasitic, interconnection scheme for advanced submillimetre‐wave GaN circuits Electronics Letters ·A. Margomenos, K. Shinohara, D. Regan, A. Corrion, David F. Brown, Yixi Tang, C. Butler, A. Schmitz, John F. Robinson, S. Kim, C. McGuire, M. Micovic	2014	2
20	10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge J.S. Moon, P. Hashimoto, D. Wong, Ming Hu, M. Antcliffe, C. McGuire, M. Micovic, P. J. Willadsen, D. H. Chow	2007	1

About C. McGuire

C. McGuire is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Astronomy and Astrophysics, having authored 22 papers that have together received 911 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (14 papers), Semiconductor Quantum Structures and Devices (9 papers), Silicon Carbide Semiconductor Technologies (5 papers), Graphene research and applications (5 papers), 2D Materials and Applications (3 papers), Quantum and electron transport phenomena (3 papers) and Advanced Power Amplifier Design (2 papers). The work is most often cited by research in Condensed Matter Physics (361 citations), Electrical and Electronic Engineering (680 citations), Materials Chemistry (423 citations), Atomic and Molecular Physics, and Optics (250 citations) and Electronic, Optical and Magnetic Materials (110 citations). C. McGuire has collaborated with scholars based in United States. Frequent co-authors include J. S. Moon, D. Wong, Ming Hu, D. Kurt Gaskill, P. M. Campbell, M. Micovic, Glenn G. Jernigan, Brenda L. VanMil, Daniel J. Curtis and J. L. Tedesco. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, IEEE Microwave and Wireless Components Letters and ECS Transactions.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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C. McGuire

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