T. Pompl

611 citations
25 papers · 396 · h-index 13

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Electrostatic Discharge in Electronics
    • Ferroelectric and Negative Capacitance Devices
    • Gas Sensing Nanomaterials and Sensors

Papers in

    • Semiconductor materials and devices 24
    • Advancements in Semiconductor Devices and Circuit Design 17
    • Integrated Circuits and Semiconductor Failure Analysis 14
    • Electrostatic Discharge in Electronics 6
    • Advanced Memory and Neural Computing 2
    • Ferroelectric and Negative Capacitance Devices 1
    • Electronic and Structural Properties of Oxides 2

T. Pompl

25 papers receiving 361 citations

Peers

T. Pompl
Comparison fields: 5 of 28
  • Electrical and Electronic Engineering 381
  • Hardware and Architecture 23
  • Bioengineering 13
  • Polymers and Plastics 31
  • Electronic, Optical and Magnetic Materials 39
Replace Gangping Yan with:
Gangping Yan China
G. Ghibaudo France
Ching-Sung Ho United States
J. De Blauwe Belgium
M. Magistretti Italy
Giovanni Betti Beneventi Italy
Songqing Zhang China
C. H. Cheng Taiwan
Beak-Hyung Cho South Korea
Osbert Cheng Taiwan
T. Pompl relative to Gangping Yan China Gangping Yan's profile →
Citations per field
00.5×10×15×
Gangping Yan · 1×
Citations per year

Countries citing papers authored by T. Pompl

Since Specialization
Citations

This map shows the geographic impact of T. Pompl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Pompl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Pompl more than expected).

Fields of papers citing papers by T. Pompl

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Pompl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Pompl. The network helps show where T. Pompl may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Pompl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Pompl Line = papers co-authored together T. Pompl links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 25 papers — load more, or switch the sort, to bring in the rest.

#Work
1 199750
2
Ultra-thin gate oxide reliability in the ESD time domain
200634
3 200327
4 200226
5 200625
6 200623
7 201023
8 200023
9 200122
10 200520
11 200720
12 200219
13 200513
14 200912
15 200611
16 200410
17 20038
18 20158
19 20006
20 20065

About T. Pompl

T. Pompl is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Hardware and Architecture and Bioengineering, having authored 25 papers that have together received 396 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Electrostatic Discharge in Electronics (6 papers), Electronic and Structural Properties of Oxides (2 papers), Advanced Memory and Neural Computing (2 papers), Copper Interconnects and Reliability (1 paper) and Ferroelectric and Negative Capacitance Devices (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (381 citations), Hardware and Architecture (23 citations), Bioengineering (13 citations), Polymers and Plastics (31 citations) and Electronic, Optical and Magnetic Materials (39 citations). T. Pompl has collaborated with scholars based in Germany, France and United States. Frequent co-authors include M. Kerber, I. Eisele, A. Kerber, W. Hänsch, Theodor Doll, Christian Schlünder, K.R. Hofmann, Jens Schneider, M. Hommel and A. Bravaix. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, Thin Solid Films and Electrical Overstress/Electrostatic Discharge Symposium.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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