Osbert Cheng

657 citations
90 papers · 566 · h-index 12

Impact in

  • Electrical and Electronic Engineering top 5%
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Advanced Memory and Neural Computing
    • Thin-Film Transistor Technologies
    • Radiation Effects in Electronics
    • Low-power high-performance VLSI design
    • Ferroelectric and Negative Capacitance Devices
  • Hardware and Architecture

Papers in

  • Electrical and Electronic Engineering 88
    • Semiconductor materials and devices 65
    • Advancements in Semiconductor Devices and Circuit Design 33
    • Advanced Memory and Neural Computing 4
    • Integrated Circuits and Semiconductor Failure Analysis 1
    • Silicon Carbide Semiconductor Technologies 1
  • Hardware and Architecture 2
    • Physical Unclonable Functions (PUFs) and Hardware Security 2
Co-authors
Ting‐Chang Chang (35 shared papers)Shoou‐Jinn Chang (21 shared papers)Hua-Mao Chen (13 shared papers)Guangrui Maggie Xia (7 shared papers)Ann‐Kuo Chu (6 shared papers)Steve Shao-Shiun Chung (10 shared papers)E. R. Hsieh (9 shared papers)Tseung‐Yuen Tseng (14 shared papers)
Journals
Applied Physics Letters (17 papers)IEEE Electron Device Letters (14 papers)Japanese Journal of Applied Physics (10 papers)IEEE Journal of the Electron Devices Society (6 papers)Thin Solid Films (5 papers)
Partner nations
TaiwanUnited StatesCanada

In The Last Decade

Osbert Cheng

88 papers receiving 556 citations

Peers

Osbert Cheng
Comparison fields: 5 of 14
  • Electrical and Electronic Engineering 512
  • Hardware and Architecture 16
  • Atomic and Molecular Physics, and Optics 24
  • Materials Chemistry 29
  • Condensed Matter Physics 5
Replace Wolfgang Gös with:
Wolfgang Gös Austria
Cristina Medina-Bailón United Kingdom
Gweltaz Gaudin France
M.-P. Samson France
B.-Y. Nguyen France
Takahiro Iizuka Japan
S. Yamaguchi Japan
Shiying Xiong United States
Tapas Dutta United Kingdom
Dawit Burusie Abdi Belgium
Osbert Cheng relative to Wolfgang Gös Austria Wolfgang Gös's profile →
Citations per field
00.5×2×3×4×4.6×
Wolfgang Gös · 1×
Citations per year

Countries citing papers authored by Osbert Cheng

Since Specialization
Citations

This map shows the geographic impact of Osbert Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Osbert Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Osbert Cheng more than expected).

Fields of papers citing papers by Osbert Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Osbert Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Osbert Cheng. The network helps show where Osbert Cheng may publish in the future.

Co-authors

The 25 scholars most cited alongside Osbert Cheng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Osbert Cheng Line = papers co-authored together Osbert Cheng links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien‐Yu Hsieh, Wen-Hung Lo, Ching-En Chen
201135
2
Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise
IEEE Electron Device Letters ·Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou‐Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang
201230
3
Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET Devices
IEEE Journal of the Electron Devices Society ·Yi-Chuen Eng, Chih-Chiang Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I.H. Chang, Luke Hu, Tzu-Feng Chang
201826
4
Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)
IEEE Symposium on VLSI Technology ·Yu‐Chi Yang, Nicolas Breil, C. Y. Yang, J.C. Hsieh, Benjamin P Colombeau, B. N. Guo, K. H. Shim, N. Variam
201624
5
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
IEEE Electron Device Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Szu-Han Ho, Wen-Hung Lo, Guangrui Maggie Xia
201022
6
Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih
201122
7
On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs
IEEE Electron Device Letters ·Chih-Hao Dai, Ting‐Chang Chang, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung
201116
8
Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
IEEE Electron Device Letters ·Wen-Hung Lo, Ting‐Chang Chang, Chih-Hao Dai, Wan-Lin Chung, Ching-En Chen, Szu-Han Ho, Osbert Cheng, Cheng Tung Huang
201215
9
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters ·Szu-Han Ho, Ting‐Chang Chang, Chi-Wei Wu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Guan-Ru Liu, Hua-Mao Chen
201314
10
A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path
IEEE Transactions on Electron Devices ·E. R. Hsieh, Yen Chen Kuo, Chih-Hung Cheng, J. L. Kuo, Meng-Ru Jiang, Steve Shao-Shiun Chung, Chuan‐Hsi Liu, Tse Pu Chen
201714
11
Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
Thin Solid Films ·Ting-Hsuan Chang, Ping‐Hung Yeh, S.C. Chen, Chih-Hao Dai, C. H. Chao, Tai-Fa Young, Osbert Cheng, Chien-Chao Huang +1 other
200813
12
Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes
IEEE Electron Device Letters ·Fong‐Min Ciou, Jia-Hong Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kai‐Chun Chang, Jui-Tse Hsu, Yu‐Shan Lin, Fu‐Yuan Jin
202113
13
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
Surface and Coatings Technology ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Tsung Tsai, Wen-Hung Lo, Szu-Han Ho
201012
14
An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET
IEEE Journal of the Electron Devices Society ·E. R. Hsieh, Meng-Ru Jiang, Jian‐Li Lin, Steve Shao-Shiun Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng
201812
15
Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors
Applied Physics Letters ·Cheng-Wen Kuo, San-Lein Wu, Shoou‐Jinn Chang, Yao-Tsung Huang, Yao-Chin Cheng, Osbert Cheng
201011
16
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
Applied Physics Letters ·Wen-Hung Lo, Ting‐Chang Chang, Jyun-Yu Tsai, Chih-Hao Dai, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Osbert Cheng
201211
17
Correlation Between Random Telegraph Noise and $ \hbox{1}/f$ Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
IEEE Electron Device Letters ·Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou‐Jinn Chang, Yu Min Lin, Kun‐Mu Lee, Osbert Cheng
201211
18
FinFET Plus: A Scalable FinFET Architecture with 3D Air-Gap and Air-Spacer Toward the 3nm Generation and Beyond
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ·H. Pai, Jing-Huan Lin, J. K. Chang, M. Y. Lee, E. R. Hsieh, K. S. Li, Guang-Li Luo, Osbert Cheng
202111
19
Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks
IEEE International Reliability Physics Symposium proceedings ·Nathan Hui-Hsin Hsu, J. W. You, H.C. Ma, Shih-Ching Lee, Eliot Chen, Lianghua Huang, Yao-Chin Cheng, Osbert Cheng
201210
20
Low-Frequency Noise Characteristics for Various ${\rm ZrO}_{2}$-Added ${\rm HfO}_{2}$-Based 28-nm High-$k$/Metal-Gate nMOSFETs
IEEE Electron Device Letters ·Shih Chang Tsai, Jone-Fang Chen, San Lein Wu, Bo Chin Wang, Shoou‐Jinn Chang, Che Hua Hsu, Chih Wei Yang, Chien-Ming Lai
201310

About Osbert Cheng

Osbert Cheng is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 90 papers that have together received 566 indexed citations. Recurring topics across this work include Semiconductor materials and devices (65 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers), Advanced Memory and Neural Computing (4 papers), Physical Unclonable Functions (PUFs) and Hardware Security (2 papers), Semiconductor materials and interfaces (1 paper), Integrated Circuits and Semiconductor Failure Analysis (1 paper) and Silicon Carbide Semiconductor Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (512 citations), Hardware and Architecture (16 citations), Atomic and Molecular Physics, and Optics (24 citations), Materials Chemistry (29 citations) and Condensed Matter Physics (5 citations). Osbert Cheng has collaborated with scholars based in Taiwan, United States and Canada. Frequent co-authors include Ting‐Chang Chang, Shoou‐Jinn Chang, Hua-Mao Chen, Guangrui Maggie Xia, Ann‐Kuo Chu, Steve Shao-Shiun Chung, E. R. Hsieh, Tseung‐Yuen Tseng, San-Lein Wu and Shih-Ching Chen. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Japanese Journal of Applied Physics, IEEE Journal of the Electron Devices Society and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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