Osbert Cheng

655 citations

90 papers · 528 · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 90
- Semiconductor materials and devices 87
- Advancements in Semiconductor Devices and Circuit Design 82
- Integrated Circuits and Semiconductor Failure Analysis 38
- Ferroelectric and Negative Capacitance Devices 34
- Silicon Carbide Semiconductor Technologies 11
- Advanced Memory and Neural Computing 7
- Thin-Film Transistor Technologies 3
Hardware and Architecture 2
- Physical Unclonable Functions (PUFs) and Hardware Security 2

Co-authors: Ting‐Chang Chang (35 shared papers)Shoou‐Jinn Chang (19 shared papers)Guangrui Xia (7 shared papers)Ann‐Kuo Chu (6 shared papers)Po‐Chin Huang (12 shared papers)Steve S. Chung (11 shared papers)Hua-Mao Chen (6 shared papers)E. R. Hsieh (10 shared papers)
Journals: Applied Physics Letters (17 papers)IEEE Electron Device Letters (14 papers)Japanese Journal of Applied Physics (11 papers)IEEE Journal of the Electron Devices Society (6 papers)IEEE Transactions on Electron Devices (5 papers)
Partner nations: Taiwan United States Canada

In The Last Decade

Osbert Cheng

86 papers receiving 521 citations

Peers

Countries citing papers authored by Osbert Cheng

Since Specialization

Citations

This map shows the geographic impact of Osbert Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Osbert Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Osbert Cheng more than expected).

Fields of papers citing papers by Osbert Cheng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Osbert Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Osbert Cheng. The network helps show where Osbert Cheng may publish in the future.

Co-authors

The 25 scholars most cited alongside Osbert Cheng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Osbert Cheng Line = papers co-authored together Osbert Cheng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, Cheng Tung Huang	2011	34
2	Comparison of the trap behavior between ZrO₂ and HfO₂ gate stack nMOSFETs by 1/f noise and random telegraph noise IEEE Electron Device Letters ·Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou‐Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Yang, Cheng Guo Chen, Osbert Cheng, Po‐Chin Huang	2012	28
3	Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET Devices IEEE Journal of the Electron Devices Society ·Yi-Chuen Eng, Chih-Chiang Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I.H. Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Osbert Cheng, Chih-Yi Wang	2018	26
4	Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih, Hua-Mao Chen, Bai-Shan Dai, Guangrui Xia, Osbert Cheng, Cheng Tung Huang	2011	22
5	On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs IEEE Electron Device Letters ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Osbert Cheng, Cheng Tung Huang	2010	22
6	On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs IEEE Electron Device Letters ·Chih-Hao Dai, Ting‐Chang Chang, (unknown), Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Osbert Cheng, Cheng-Tung Huang	2011	16
7	Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation IEEE Electron Device Letters ·Wen-Hung Lo, Ting‐Chang Chang, Chih-Hao Dai, Wan-Lin Chung, Ching-En Chen, Szu-Han Ho, Osbert Cheng, Cheng Tung Huang	2012	15
8	Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters ·Szu-Han Ho, Ting‐Chang Chang, Chi-Wei Wu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Guan-Ru Liu, Hua-Mao Chen, Ying-Shin Lu, Bin-Wei Wang, Tseung‐Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Simon M. Sze	2013	14
9	Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress Thin Solid Films ·Yu‐Sheng Kuo, Ting-Hsuan Chang, Ping‐Hung Yeh, S.C. Chen, Chih-Hao Dai, C. H. Chao, Tai-Fa Young, Osbert Cheng, Chien-Chao Huang	2008	13
10	A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path IEEE Transactions on Electron Devices ·E. R. Hsieh, Yen Chen Kuo, Chih-Hung Cheng, J. L. Kuo, Meng-Ru Jiang, Jian‐Li Lin, Hung‐Wen Chen, Steve S. Chung, Chuan‐Hsi Liu, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng	2017	13
11	Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain Surface and Coatings Technology ·Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Tsung Tsai, Wen-Hung Lo, Szu-Han Ho, Guangrui Xia, Osbert Cheng, Cheng Tung Huang	2010	12
12	Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress Applied Physics Letters ·Wen-Hung Lo, Ting‐Chang Chang, Jyun-Yu Tsai, Chih-Hao Dai, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Osbert Cheng, Cheng-Tung Huang	2012	11
13	Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors Applied Physics Letters ·Cheng-Wen Kuo, San-Lein Wu, Shoou‐Jinn Chang, Yao-Tsung Huang, Yao-Chin Cheng, Osbert Cheng	2010	11
14	FinFET Plus: A Scalable FinFET Architecture with 3D Air-Gap and Air-Spacer Toward the 3nm Generation and Beyond C. K. Chiang, H. Pai, Jing-Huan Lin, J. K. Chang, M. Y. Lee, E. R. Hsieh, K. S. Li, Guang-Li Luo, Osbert Cheng, Steve S. Chung	2021	11
15	Correlation Between Random Telegraph Noise and $ \hbox{1}/f$ Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain IEEE Electron Device Letters ·Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou‐Jinn Chang, Yu Min Lin, Kun‐Mu Lee, Osbert Cheng	2012	11
16	An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET IEEE Journal of the Electron Devices Society ·E. R. Hsieh, Meng-Ru Jiang, Jian‐Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng	2018	11
17	Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes IEEE Electron Device Letters ·Fong‐Min Ciou, Jia-Hong Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kai‐Chun Chang, Jui-Tse Hsu, Yu‐Shan Lin, Fu‐Yuan Jin, Wei‐Chun Hung, Chien‐Hung Yeh, Ting-Tzu Kuo, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye	2021	10
18	Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks Nathan Hui-Hsin Hsu, J. W. You, H.C. Ma, Shih-Ching Lee, Eliot Chen, Lianghua Huang, Yao-Chin Cheng, Osbert Cheng, I. C. Chen	2012	10
19	Low-Frequency Noise Characteristics for Various ${\rm ZrO}_{2}$-Added ${\rm HfO}_{2}$-Based 28-nm High-$k$/Metal-Gate nMOSFETs IEEE Electron Device Letters ·Shih Chang Tsai, Po‐Chin Huang, Jone F. Chen, San Lein Wu, Bo Chin Wang, Shoou‐Jinn Chang, Che Hua Hsu, Chih Yang, Chien-Ming Lai, Chia Wei Hsu, Osbert Cheng	2013	10
20	Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement Applied Physics Letters ·Szu-Han Ho, Ting‐Chang Chang, Ying‐Hsin Lu, Ching-En Chen, Jyun-Yu Tsai, Kuan-Ju Liu, Tseung‐Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Ching-Sen Lu	2014	9

About Osbert Cheng

Osbert Cheng is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Artificial Intelligence, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 90 papers that have together received 528 indexed citations. Recurring topics across this work include Semiconductor materials and devices (87 papers), Advancements in Semiconductor Devices and Circuit Design (82 papers), Integrated Circuits and Semiconductor Failure Analysis (38 papers), Ferroelectric and Negative Capacitance Devices (34 papers), Silicon Carbide Semiconductor Technologies (11 papers), Advanced Memory and Neural Computing (7 papers), Thin-Film Transistor Technologies (3 papers) and Physical Unclonable Functions (PUFs) and Hardware Security (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (515 citations), Hardware and Architecture (15 citations), Materials Chemistry (56 citations), Polymers and Plastics (9 citations) and Condensed Matter Physics (7 citations). Osbert Cheng has collaborated with scholars based in Taiwan, United States and Canada. Frequent co-authors include Ting‐Chang Chang, Shoou‐Jinn Chang, Guangrui Xia, Ann‐Kuo Chu, Po‐Chin Huang, Steve S. Chung, Hua-Mao Chen, E. R. Hsieh, Tseung‐Yuen Tseng and Shih-Ching Chen. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Japanese Journal of Applied Physics, IEEE Journal of the Electron Devices Society and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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