K.R. Hofmann

1.4k citations
65 papers · 1.0k · h-index 17

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Silicon Carbide Semiconductor Technologies
    • Ferroelectric and Negative Capacitance Devices
    • Semiconductor materials and interfaces
    • Semiconductor Quantum Structures and Devices

Papers in

K.R. Hofmann

62 papers receiving 986 citations

Peers

K.R. Hofmann
Comparison fields: 5 of 42
  • Electrical and Electronic Engineering 936
  • Atomic and Molecular Physics, and Optics 317
  • Materials Chemistry 254
  • Surfaces, Coatings and Films 25
  • Condensed Matter Physics 30
Replace T. Kure with:
T. Kure Japan
L. Forbes United States
E. Augendre France
Shang-Yi Chiang United States
G. Ghidini Italy
M. Y. Tsai United States
Hung-Hsiang Cheng Taiwan
D. Dutartre France
S. Paul Germany
A. Martı́nez United Kingdom
K.R. Hofmann relative to T. Kure Japan T. Kure's profile →
Citations per field
00.5×
T. Kure · 1×
Citations per year

Countries citing papers authored by K.R. Hofmann

Since Specialization
Citations

This map shows the geographic impact of K.R. Hofmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.R. Hofmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.R. Hofmann more than expected).

Fields of papers citing papers by K.R. Hofmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.R. Hofmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.R. Hofmann. The network helps show where K.R. Hofmann may publish in the future.

Co-authors

The 25 scholars most cited alongside K.R. Hofmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.R. Hofmann Line = papers co-authored together K.R. Hofmann links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#Work
1 1985249
2 1993118
3 201353
4 199744
5 199935
6 200533
7 200330
8 200227
9 199127
10 200326
11 199221
12 198321
13 201020
14 200919
15 200518
16 200517
17 200517
18 198416
19 200415
20 201014

About K.R. Hofmann

K.R. Hofmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 65 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and interfaces (10 papers), Semiconductor Quantum Structures and Devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Nanowire Synthesis and Applications (9 papers), Quantum and electron transport phenomena (8 papers) and Silicon Nanostructures and Photoluminescence (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (936 citations), Atomic and Molecular Physics, and Optics (317 citations), Materials Chemistry (254 citations), Surfaces, Coatings and Films (25 citations) and Condensed Matter Physics (30 citations). K.R. Hofmann has collaborated with scholars based in Germany, United States and Netherlands. Frequent co-authors include G. Dorda, C. Werner, W. Weber, E. Bugiel, M. Kammler, M. Horn‐von Hoegen, Bernhard Müller, Tobias Wietler, Robby Peibst and Thomas Vogelsang. Their work appears in journals such as Electronics Letters, Thin Solid Films, Applied Physics Letters, Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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