P. Roche

3.6k citations

165 papers · 2.9k · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Radiation Effects in Electronics
- Low-power high-performance VLSI design
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
- Semiconductor materials and devices
Hardware and Architecture top 5%
- VLSI and Analog Circuit Testing

Papers in

Electrical and Electronic Engineering 159
- Radiation Effects in Electronics 130
- Low-power high-performance VLSI design 25
- CCD and CMOS Imaging Sensors 4
- Advancements in Semiconductor Devices and Circuit Design 3
Hardware and Architecture 11
- VLSI and Analog Circuit Testing 9
- Physical Unclonable Functions (PUFs) and Hardware Security 4

Co-authors: Gilles Gasiot (100 shared papers)Jean‐Luc Autran (67 shared papers)Damien Giot (10 shared papers)Daniela Munteanu (35 shared papers)Tino Heijmen (3 shared papers)Sylvain Clerc (33 shared papers)Sławosz Uznański (18 shared papers)J.M. Palau (6 shared papers)
Journals: IEEE Transactions on Nuclear Science (54 papers)Microelectronics Reliability (6 papers)IEEE Solid-State Circuits Letters (2 papers)IEEE Transactions on Device and Materials Reliability (2 papers)IEEE Journal of Solid-State Circuits (2 papers)
Partner nations: France United States Netherlands

In The Last Decade

P. Roche

150 papers receiving 2.8k citations

Peers

Countries citing papers authored by P. Roche

Since Specialization

Citations

This map shows the geographic impact of P. Roche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Roche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Roche more than expected).

Fields of papers citing papers by P. Roche

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Roche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Roche. The network helps show where P. Roche may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Roche, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Roche Line = papers co-authored together P. Roche links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 165 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations IEEE Transactions on Nuclear Science ·P. Roche, J.M. Palau, G. Bruguier, C. Tavernier, R. Ecoffet, Jean Gasiot	1999	122
2	Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering IEEE Transactions on Nuclear Science ·Gilles Gasiot, Damien Giot, P. Roche	2007	122
3	Factors That Impact the Critical Charge of Memory Elements IEEE International On-Line Testing Symposium (IOLTS) ·Tino Heijmen, Damien Giot, P. Roche	2006	113
4	Technology downscaling worsening radiation effects in bulk: SOI to the rescue Technical digest - International Electron Devices Meeting/Technical digest ·P. Roche, Jean‐Luc Autran, Gilles Gasiot, Daniela Munteanu	2013	97
5	Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node IEEE Transactions on Nuclear Science ·P. Roche, Gilles Gasiot, Keith Forbes, V. O'Sullivan, V. Ferlet	2003	82
6	Impacts of front-end and middle-end process modifications on terrestrial soft error rate IEEE Transactions on Device and Materials Reliability ·P. Roche, Gilles Gasiot	2005	78
7	Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops IEEE Transactions on Nuclear Science ·Sławosz Uznański, Gilles Gasiot, P. Roche, C. Tavernier, Jean‐Luc Autran	2010	68
8	Analysis of multiple bit upsets (MBU) in CMOS SRAM IEEE Transactions on Nuclear Science ·O. Musseau, F. Gardic, P. Roche, Thierry Corbiere, Robert A. Reed, Stephen P Buchner, P.T. McDonald, Joseph S. Melinger	1996	65
9	Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER IEEE Transactions on Nuclear Science ·T. Mérelle, H. Chabane, J.M. Palau, K. Castellani-Coulié, F. Wrobel, Frédéric Saigné, B. Sagnes, J. Boch	2005	65
10	A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries IEEE Transactions on Device and Materials Reliability ·Tino Heijmen, P. Roche, Gilles Gasiot, Keith R. Forbes, Damien Giot	2007	57
11	Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs IEEE Transactions on Nuclear Science ·Damien Giot, P. Roche, Gilles Gasiot, Jean‐Luc Autran, R. Harboe-Sørensen	2008	57
12	Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM IEEE Transactions on Nuclear Science ·Jean‐Luc Autran, P. Roche, S. Sauze, Gilles Gasiot, Daniela Munteanu, Pia Loaiza, Michel Zampaolo, J. Borel	2009	56
13	Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology IEEE Transactions on Nuclear Science ·Gilles Gasiot, Damien Giot, P. Roche	2006	53
14	Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations IEEE Transactions on Nuclear Science ·Damien Giot, P. Roche, Gilles Gasiot, R. Harboe-Sørensen	2007	51
15	SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain IEEE Transactions on Nuclear Science ·P. Roche, J.M. Palau, K. Belhaddad, G. Bruguier, R. Ecoffet, Jean Gasiot	1998	50
16	Contribution of device simulation to SER understandfng IEEE International Reliability Physics Symposium proceedings ·J.M. Palau, M.-C. Calvet, P.E. Dodd, Fred W. Sexton, P. Roche	2003	43
17	8.4 A 0.33V/-40°C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference ·Sylvain Clerc, Mehdi Saligane, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Cyril Bottoni, David Bol, Julien De-Vos	2015	41
18	A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling IEEE Transactions on Nuclear Science ·P. Roche, Gilles Gasiot, Sławosz Uznański, Jean-Marc Daveau, Josep Torras Flaquer, Sylvain Clerc, R. Harboe-Sørensen	2010	40
19	Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM IEEE Transactions on Nuclear Science ·Vincent Correas, Frédéric Saigné, B. Sagnes, F. Wrobel, J. Boch, Gilles Gasiot, P. Roche	2009	38
20	Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level Microelectronics Reliability ·Jean‐Luc Autran, Daniela Munteanu, P. Roche, Gilles Gasiot, Sbastien Martinie, Sławosz Uznański, S. Sauze, S. S. Semikh	2010	38

About P. Roche

P. Roche is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Nuclear and High Energy Physics, Safety, Risk, Reliability and Quality and Computational Theory and Mathematics, having authored 165 papers that have together received 2.9k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (130 papers), Low-power high-performance VLSI design (25 papers), VLSI and Analog Circuit Testing (9 papers), Particle Detector Development and Performance (4 papers), Physical Unclonable Functions (PUFs) and Hardware Security (4 papers), CCD and CMOS Imaging Sensors (4 papers), Formal Methods in Verification (3 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.7k citations), Hardware and Architecture (112 citations), Nuclear Energy and Engineering (2 citations), Radiation (31 citations) and Nuclear and High Energy Physics (62 citations). P. Roche has collaborated with scholars based in France, United States and Netherlands. Frequent co-authors include Gilles Gasiot, Jean‐Luc Autran, Damien Giot, Daniela Munteanu, Tino Heijmen, Sylvain Clerc, Sławosz Uznański, J.M. Palau, Fady Abouzeid and Jean-Marc Daveau. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, IEEE Solid-State Circuits Letters, IEEE Transactions on Device and Materials Reliability and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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