P.E. Dodd

9.8k citations

155 papers · 7.7k · 2 hit papers · h-index 45

Impact in

Hardware and Architecture top 0.2%
- VLSI and Analog Circuit Testing
Electrical and Electronic Engineering top 0.2%
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 147
- Radiation Effects in Electronics 97
- Semiconductor materials and devices 97
- Integrated Circuits and Semiconductor Failure Analysis 76
- Advancements in Semiconductor Devices and Circuit Design 45
- Advanced Memory and Neural Computing 16
- Electrostatic Discharge in Electronics 10
Hardware and Architecture 19
- VLSI and Analog Circuit Testing 18

Co-authors: M.R. Shaneyfelt (101 shared papers)J.R. Schwank (49 shared papers)L. W. Massengill (9 shared papers)F.W. Sexton (23 shared papers)Philippe Paillet (23 shared papers)J. Félix (19 shared papers)Daniel M. Fleetwood (19 shared papers)James R. Schwank (35 shared papers)
Journals: IEEE Transactions on Nuclear Science (95 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (5 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Electron Device Letters (2 papers)Electronics Letters (2 papers)
Partner nations: United States France Canada

In The Last Decade

P.E. Dodd

151 papers receiving 7.2k citations

P.E. Dodd's Hit Papers

align trajectories log scale

Radiation Effects in MOS Oxides 2008 · 683 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2008 IEEE Transactions on Nuclear Science
2003 IEEE Transactions on Nuclear Science

Peers

Countries citing papers authored by P.E. Dodd

Since Specialization

Citations

This map shows the geographic impact of P.E. Dodd's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.E. Dodd with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.E. Dodd more than expected).

Fields of papers citing papers by P.E. Dodd

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.E. Dodd. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.E. Dodd. The network helps show where P.E. Dodd may publish in the future.

Co-authors

The 25 scholars most cited alongside P.E. Dodd, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.E. Dodd Line = papers co-authored together P.E. Dodd links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 155 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Basic mechanisms and modeling of single-event upset in digital microelectronics IEEE Transactions on Nuclear Science ·P.E. Dodd, L. W. Massengill Hit paper breakdown →	2003	848
2	Radiation Effects in MOS Oxides IEEE Transactions on Nuclear Science ·James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood, James A. Felix, P.E. Dodd, Philippe Paillet, Véronique Ferlet-Cavrois Hit paper breakdown →	2008	683
3	Radiation effects in SOI technologies IEEE Transactions on Nuclear Science ·J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt, Philippe Paillet, P.E. Dodd	2003	337
4	Current and Future Challenges in Radiation Effects on CMOS Electronics IEEE Transactions on Nuclear Science ·P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, J. Félix	2010	282
5	Production and propagation of single-event transients in high-speed digital logic ICs IEEE Transactions on Nuclear Science ·P.E. Dodd, M.R. Shaneyfelt, J. Félix, J.R. Schwank	2004	260
6	Challenges in hardening technologies using shallow-trench isolation IEEE Transactions on Nuclear Science ·M.R. Shaneyfelt, P.E. Dodd, B.L. Draper, Richard S. Flores	1998	220
7	SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments IEEE Transactions on Nuclear Science ·P.E. Dodd, A.R. Shaneyfelt, K.M. Horn, D.S. Walsh, G.L. Hash, T.A. Hill, B.L. Draper, J.R. Schwank, F.W. Sexton, P.S. Winokur	2001	162
8	Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction IEEE Transactions on Nuclear Science ·Jeffrey D. Black, P.E. Dodd, Kevin M. Warren	2013	150
9	Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance IEEE Transactions on Nuclear Science ·J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd	2013	144
10	Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM IEEE Transactions on Nuclear Science ·David F. Heidel, Paul W. Marshall, Jonathan A. Pellish, Kenneth P. Rodbell, Kenneth A. LaBel, James R. Schwank, Stewart E. Rauch, Mark C. Hakey, Melanie D. Berg, Carlos M. Castaneda, P.E. Dodd, M. Friendlich, Anthony Phan, C.M. Seidleck, M.R. Shaneyfelt, M.A. Xapsos	2009	141
11	Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM IEEE Transactions on Nuclear Science ·David F. Heidel, Paul W. Marshall, Kenneth A. LaBel, James R. Schwank, Kenneth P. Rodbell, Mark C. Hakey, Melanie D. Berg, P.E. Dodd, M. Friendlich, Anthony Phan, C.M. Seidleck, M.R. Shaneyfelt, M.A. Xapsos	2008	139
12	Device simulation of charge collection and single-event upset IEEE Transactions on Nuclear Science ·P.E. Dodd	1996	136
13	New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow, N. Fel, J. Baggio, Sylvain Girard, Olivier Duhamel, Joseph S. Melinger, Marc Gaillardin, J.R. Schwank, P.E. Dodd, M.R. Shaneyfelt, J. Félix	2007	132
14	Critical charge concepts for CMOS SRAMs IEEE Transactions on Nuclear Science ·P.E. Dodd, F.W. Sexton	1995	131
15	Physics-based simulation of single-event effects IEEE Transactions on Device and Materials Reliability ·P.E. Dodd	2005	118
16	Precursor ion damage and angular dependence of single event gate rupture in thin oxides IEEE Transactions on Nuclear Science ·F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, P.E. Dodd, G.L. Hash, L.P. Schanwald, R.A. Loemker, K.S. Krisch, M.L. Green, B. E. Weir, P. J. Silvėrman	1998	115
17	Heavy ion-induced digital single-event transients in deep submicron Processes IEEE Transactions on Nuclear Science ·J.M. Benedetto, Paul Eaton, Keith Avery, D.G. Mavis, Matthew J. Gadlage, T.L. Turflinger, P.E. Dodd, G. Vizkelethyd	2004	107
18	Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains IEEE Transactions on Nuclear Science ·Véronique Ferlet-Cavrois, V. Pouget, Dale McMorrow, J.R. Schwank, N. Fel, F. Essely, R. S. Flores, Philippe Paillet, Marc Gaillardin, Daisuke Kobayashi, Joseph S. Melinger, Olivier Duhamel, P.E. Dodd, M.R. Shaneyfelt	2008	100
19	Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits IEEE Transactions on Nuclear Science ·P.E. Dodd, J.R. Schwank, M.R. Shaneyfelt, J. Félix, Philippe Paillet, V. Ferlet-Cavrois, J. Baggio, Robert A. Reed, Kevin M. Warren, Robert A. Weller, Ronald D. Schrimpf, G.L. Hash, Scott M. Dalton, Kazuyuki Hirose, Hirobumi Saito	2007	98
20	Three-dimensional simulation of charge collection and multiple-bit upset in Si devices IEEE Transactions on Nuclear Science ·P.E. Dodd, F.W. Sexton, P.S. Winokur	1994	95

About P.E. Dodd

P.E. Dodd is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Materials Chemistry and Cellular and Molecular Neuroscience, having authored 155 papers that have together received 7.7k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (97 papers), Semiconductor materials and devices (97 papers), Integrated Circuits and Semiconductor Failure Analysis (76 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers), VLSI and Analog Circuit Testing (18 papers), Advanced Memory and Neural Computing (16 papers), Semiconductor Quantum Structures and Devices (10 papers) and Electrostatic Discharge in Electronics (10 papers). The work is most often cited by research in Hardware and Architecture (2.0k citations), Electrical and Electronic Engineering (7.4k citations), Radiation (449 citations), Nuclear and High Energy Physics (329 citations) and Safety, Risk, Reliability and Quality (178 citations). P.E. Dodd has collaborated with scholars based in United States, France and Canada. Frequent co-authors include M.R. Shaneyfelt, J.R. Schwank, L. W. Massengill, F.W. Sexton, Philippe Paillet, J. Félix, Daniel M. Fleetwood, James R. Schwank, G.L. Hash and James A. Felix. Their work appears in journals such as IEEE Transactions on Nuclear Science, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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