P.E. Dodd

10k citations

152 papers · 8k · 2 hit papers · h-index 47

Impact in

Electrical and Electronic Engineering top 0.2%
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 150
- Radiation Effects in Electronics 136
- Advancements in Semiconductor Devices and Circuit Design 9
- Semiconductor materials and devices 6
- Advanced Memory and Neural Computing 6
- Integrated Circuits and Semiconductor Failure Analysis 5
- Photonic and Optical Devices 2
Nuclear Energy and Engineering 1

Co-authors: Marty R. Shaneyfelt (101 shared papers)J.R. Schwank (48 shared papers)Lloyd W. Massengill (9 shared papers)Philippe Paillet (23 shared papers)Fred W. Sexton (22 shared papers)Daniel M. Fleetwood (19 shared papers)James R. Schwank (36 shared papers)Gerald L. Hash (22 shared papers)
Journals: IEEE Transactions on Nuclear Science (97 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (6 papers)IEEE Transactions on Electron Devices (3 papers)Electronics Letters (2 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States France Canada

In The Last Decade

P.E. Dodd

150 papers receiving 7.6k citations

P.E. Dodd's Hit Papers

align trajectories log scale

Radiation Effects in MOS Oxides 2008 · 707 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2008 IEEE Transactions on Nuclear Science
2003 IEEE Transactions on Nuclear Science

Peers

Countries citing papers authored by P.E. Dodd

Since Specialization

Citations

This map shows the geographic impact of P.E. Dodd's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.E. Dodd with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.E. Dodd more than expected).

Fields of papers citing papers by P.E. Dodd

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.E. Dodd. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.E. Dodd. The network helps show where P.E. Dodd may publish in the future.

Co-authors

The 25 scholars most cited alongside P.E. Dodd, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.E. Dodd Line = papers co-authored together P.E. Dodd links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 152 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Basic mechanisms and modeling of single-event upset in digital microelectronics IEEE Transactions on Nuclear Science ·P.E. Dodd, Lloyd W. Massengill Hit paper breakdown →	2003	867
2	Radiation Effects in MOS Oxides IEEE Transactions on Nuclear Science ·James R. Schwank, Marty R. Shaneyfelt, Daniel M. Fleetwood, James A. Felix, P.E. Dodd, Philippe Paillet, Véronique Ferlet-Cavrois Hit paper breakdown →	2008	707
3	Radiation effects in SOI technologies IEEE Transactions on Nuclear Science ·J.R. Schwank, V. Ferlet-Cavrois, Marty R. Shaneyfelt, Philippe Paillet, P.E. Dodd	2003	351
4	Current and Future Challenges in Radiation Effects on CMOS Electronics IEEE Transactions on Nuclear Science ·P.E. Dodd, Marty R. Shaneyfelt, J.R. Schwank +1 other	2010	292
5	Production and propagation of single-event transients in high-speed digital logic ICs IEEE Transactions on Nuclear Science ·P.E. Dodd, Marty R. Shaneyfelt, J.R. Schwank +1 other	2004	269
6	Challenges in hardening technologies using shallow-trench isolation IEEE Transactions on Nuclear Science ·Marty R. Shaneyfelt, P.E. Dodd, Bruce L. Draper, Richard S. Flores	1998	223
7	SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments IEEE Transactions on Nuclear Science ·P.E. Dodd, A.R. Shaneyfelt, Kevin M. Horn, David S. Walsh, Gerald L. Hash, T.A. Hill, Bruce L. Draper, J.R. Schwank	2001	163
8	Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction IEEE Transactions on Nuclear Science ·Jeffrey D. Black, P.E. Dodd, Kevin M. Warren	2013	156
9	Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance IEEE Transactions on Nuclear Science ·J.R. Schwank, Marty R. Shaneyfelt, P.E. Dodd	2013	150
10	Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM IEEE Transactions on Nuclear Science ·David F. Heidel, Paul W. Marshall, Jonathan A. Pellish, Kenneth P. Rodbell, Kenneth A. LaBel, James R. Schwank, Stewart E. Rauch, Mark C. Hakey	2009	146
11	Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM IEEE Transactions on Nuclear Science ·David F. Heidel, Paul W. Marshall, Kenneth A. LaBel, James R. Schwank, Kenneth P. Rodbell, Mark C. Hakey, Melanie D. Berg, P.E. Dodd	2008	142
12	Device simulation of charge collection and single-event upset IEEE Transactions on Nuclear Science ·P.E. Dodd	1996	139
13	Critical charge concepts for CMOS SRAMs IEEE Transactions on Nuclear Science ·P.E. Dodd, Fred W. Sexton	1995	135
14	New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening IEEE Transactions on Nuclear Science ·V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow, N. Fel, Jacques Baggio, Sylvain Girard, Olivier Duhamel, Joseph S. Melinger	2007	129
15	Physics-based simulation of single-event effects IEEE Transactions on Device and Materials Reliability ·P.E. Dodd	2005	121
16	Precursor ion damage and angular dependence of single event gate rupture in thin oxides IEEE Transactions on Nuclear Science ·Fred W. Sexton, Daniel M. Fleetwood, Marty R. Shaneyfelt, P.E. Dodd, Gerald L. Hash, L.P. Schanwald, R.A. Loemker, K.S. Krisch	1998	115
17	Heavy ion-induced digital single-event transients in deep submicron Processes IEEE Transactions on Nuclear Science ·Joseph M. Benedetto, Paul H. Eaton, Keith A. Avery, D. G. Mavis, Matthew J. Gadlage, T.L. Turflinger, P.E. Dodd, G. Vizkelethyd	2004	113
18	Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits IEEE Transactions on Nuclear Science ·P.E. Dodd, J.R. Schwank, Marty R. Shaneyfelt, Philippe Paillet, V. Ferlet-Cavrois, Jacques Baggio, Robert A. Reed, Kevin M. Warren	2007	103
19	Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains IEEE Transactions on Nuclear Science ·Véronique Ferlet-Cavrois, V. Pouget, Dale McMorrow, J.R. Schwank, N. Fel, F. Essely, R. S. Flores, Philippe Paillet	2008	103
20	Single event gate rupture in thin gate oxides IEEE Transactions on Nuclear Science ·Fred W. Sexton, Daniel M. Fleetwood, Marty R. Shaneyfelt, P.E. Dodd, Gerald L. Hash	1997	99

About P.E. Dodd

P.E. Dodd is a scholar working on Electrical and Electronic Engineering, Nuclear Energy and Engineering, Nuclear and High Energy Physics, Computational Mechanics and Ceramics and Composites, having authored 152 papers that have together received 8k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (136 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (6 papers), Advanced Memory and Neural Computing (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Ion-surface interactions and analysis (2 papers), Particle Detector Development and Performance (2 papers) and Photonic and Optical Devices (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (7.6k citations), Hardware and Architecture (126 citations), Nuclear and High Energy Physics (267 citations), Radiation (84 citations) and Ceramics and Composites (42 citations). P.E. Dodd has collaborated with scholars based in United States, France and Canada. Frequent co-authors include Marty R. Shaneyfelt, J.R. Schwank, Lloyd W. Massengill, Philippe Paillet, Fred W. Sexton, Daniel M. Fleetwood, James R. Schwank, Gerald L. Hash, James A. Felix and V. Ferlet-Cavrois. Their work appears in journals such as IEEE Transactions on Nuclear Science, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, IEEE Transactions on Electron Devices, Electronics Letters and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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