M. Roeckerath

2.0k citations

26 papers · 652 · h-index 18

Impact in

Electronic, Optical and Magnetic Materials top 10%
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials

Papers in

Materials Chemistry 26
- Electronic and Structural Properties of Oxides 21
- Ferroelectric and Piezoelectric Materials 8
- ZnO doping and properties 2
Electrical and Electronic Engineering 21
- Semiconductor materials and devices 21
- Ferroelectric and Negative Capacitance Devices 9

Co-authors: J. Schubert (23 shared papers)J. M. J. Lopes (15 shared papers)S. Mantl (13 shared papers)Darrell G. Schlom (11 shared papers)T. Heeg (12 shared papers)St. Lenk (7 shared papers)M. Luysberg (4 shared papers)U. Littmark (6 shared papers)
Journals: Applied Physics Letters (8 papers)Microelectronic Engineering (4 papers)Applied Physics A (4 papers)Journal of Applied Physics (2 papers)Chemical Vapor Deposition (1 paper)
Partner nations: Germany United States Belgium

In The Last Decade

M. Roeckerath

26 papers receiving 622 citations

Peers

Countries citing papers authored by M. Roeckerath

Since Specialization

Citations

This map shows the geographic impact of M. Roeckerath's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Roeckerath with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Roeckerath more than expected).

Fields of papers citing papers by M. Roeckerath

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Roeckerath. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Roeckerath. The network helps show where M. Roeckerath may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Roeckerath, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Roeckerath Line = papers co-authored together M. Roeckerath links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric Applied Physics Letters ·J. M. J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V. V. Afanas’ev, S. Shamuilia, A. Stesmans, Yufei Jia, Darrell G. Schlom	2006	71
2	Optical band gap and magnetic properties of unstrained EuTiO3 films Applied Physics Letters ·J. H. Lee, Xianglin Ke, Nikolas J. Podraza, Lena F. Kourkoutis, T. Heeg, M. Roeckerath, J. W. Freeland, Craig J. Fennie, J. Schubert, David A. Muller, P. Schiffer, Darrell G. Schlom	2009	62
3	Amorphous ternary rare-earth gate oxides for future integration in MOSFETs Microelectronic Engineering ·J. M. J. Lopes, E. Durğun Özben, M. Roeckerath, U. Littmark, R. Lupták, St. Lenk, M. Luysberg, Astrid Besmehn, U. Breuer, J. Schubert, S. Mantl	2009	50
4	Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy Applied Physics Letters ·J. H. Lee, Xianglin Ke, Ranjeev Misra, Jon F. Ihlefeld, Xiaoshan Xu, Zhi-Gang Mei, T. Heeg, M. Roeckerath, J. Schubert, Zi‐Kui Liu, J. L. Musfeldt, P. Schiffer, Darrell G. Schlom	2010	42
5	Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition Applied Physics Letters ·Reji Thomas, P. Ehrhart, M. Luysberg, Markus Boese, Rainer Waser, M. Roeckerath, E. Rije, (unknown), Sven Van Elshocht, Matty Caymax	2006	39
6	Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3 Microelectronic Engineering ·V. V. Afanas’ev, S. Shamuilia, M. Badylevich, A. Stesmans, L. F. Edge, Wei Tian, Darrell G. Schlom, J. M. J. Lopes, M. Roeckerath, J. Schubert	2007	35
7	Synthesis and characterization of an n=6 Aurivillius phase incorporating magnetically active manganese, Bi7(Mn,Ti)6O21 Applied Physics Letters ·M. A. Zurbuchen, R. S. Freitas, Mark Wilson, P. Schiffer, M. Roeckerath, J. Schubert, Michael D. Biegalski, G. H. Mehta, David J. Comstock, J. H. Lee, Yan Jia, Darrell G. Schlom	2007	31
8	Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size Journal of Materials Chemistry ·Pia Myllymäki, M. Roeckerath, J. M. J. Lopes, J. Schubert, Kenichiro Mizohata, Matti Putkonen, Lauri Niinistö	2010	30
9	La-based ternary rare-earth oxides as alternative high-κ dielectrics Microelectronic Engineering ·J. M. J. Lopes, M. Roeckerath, T. Heeg, U. Littmark, J. Schubert, S. Mantl, Yan Jia, Darrell G. Schlom	2007	27
10	Liquid Injection MOCVD of Dysprosium Scandate Films Journal of The Electrochemical Society ·Reji Thomas, P. Ehrhart, M. Roeckerath, Sven Van Elshocht, E. Rije, M. Luysberg, Markus Boese, (unknown), Matty Caymax, Rainer Waser	2007	27
11	Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric Thin Solid Films ·M. Roeckerath, T. Heeg, J. M. J. Lopes, J. Schubert, S. Mantl, Astrid Besmehn, Pia Myllymäki, Lauri Niinistö	2008	27
12	Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition Journal of Applied Physics ·J. M. J. Lopes, U. Littmark, M. Roeckerath, St. Lenk, J. Schubert, S. Mantl, Astrid Besmehn	2007	26
13	Growth of Dysprosium‐, Scandium‐, and Hafnium‐based Third Generation High‐κ Dielectrics by Atomic Vapor Deposition Chemical Vapor Deposition ·Christoph Adelmann, P. Lehnen, Sven Van Elshocht, Chao Zhao, Bert Brijs, Alexis Franquet, Thierry Conard, M. Roeckerath, J. Schubert, Olivier Boissière, C. Lohe, (unknown)	2007	25
14	Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition Applied Physics A ·Pia Myllymäki, M. Roeckerath, Matti Putkonen, St. Lenk, J. Schubert, Lauri Niinistö, S. Mantl	2007	25
15	Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition Applied Physics A ·J. Schubert, O. Trithaveesak, W. Zander, M. Roeckerath, T. Heeg, H.Y. Chen, Chun‐Lin Jia, P. Meuffels, Yufei Jia, Darrell G. Schlom	2007	24
16	Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon Applied Physics A ·M. Roeckerath, J. M. J. Lopes, E. Durğun Özben, C. Sandow, St. Lenk, T. Heeg, J. Schubert, S. Mantl	2008	20
17	SmScO 3 thin films as an alternative gate dielectric Applied Physics Letters ·E. Durğun Özben, J. M. J. Lopes, M. Roeckerath, St. Lenk, B. Holländer, Yufei Jia, Darrell G. Schlom, J. Schubert, S. Mantl	2008	19
18	Intermixing and charge neutrality at DyScO3/SrTiO3 interfaces Acta Materialia ·M. Luysberg, Markus Heidelmann, Lothar Houben, Markus Boese, T. Heeg, J. Schubert, M. Roeckerath	2009	17
19	Photoconductivity of Hf-based binary metal oxide systems Journal of Applied Physics ·S. Shamuilia, V. V. Afanas’ev, A. Stesmans, Ivana McCarthy, S.A. Campbell, Mohamed Boutchich, M. Roeckerath, T. Heeg, J. M. J. Lopes, J. Schubert	2008	12
20	Epitaxially stabilized growth of orthorhombic LuScO3 thin films Applied Physics Letters ·T. Heeg, M. Roeckerath, J. Schubert, W. Zander, Ch. Buchal, H. Y. Chen, Chun‐Lin Jia, Yonglei Jia, Carolina Adamo, Darrell G. Schlom	2007	12

About M. Roeckerath

M. Roeckerath is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Infectious Diseases, having authored 26 papers that have together received 652 indexed citations. Recurring topics across this work include Electronic and Structural Properties of Oxides (21 papers), Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Ferroelectric and Piezoelectric Materials (8 papers), Magnetic and transport properties of perovskites and related materials (5 papers), Copper Interconnects and Reliability (4 papers), Multiferroics and related materials (3 papers) and ZnO doping and properties (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (238 citations), Materials Chemistry (504 citations), Electrical and Electronic Engineering (463 citations), Condensed Matter Physics (57 citations) and Atomic and Molecular Physics, and Optics (71 citations). M. Roeckerath has collaborated with scholars based in Germany, United States and Belgium. Frequent co-authors include J. Schubert, J. M. J. Lopes, S. Mantl, Darrell G. Schlom, T. Heeg, St. Lenk, M. Luysberg, U. Littmark, Astrid Besmehn and E. Rije. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Applied Physics A, Journal of Applied Physics and Chemical Vapor Deposition.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

M. Roeckerath

Impact in

Papers in i

In The Last Decade

M. Roeckerath

Peers

Countries citing papers authored by M. Roeckerath

Fields of papers citing papers by M. Roeckerath

All Works

About M. Roeckerath

Explore authors with similar magnitude of impact

Papers in