C. Sandow

761 citations
37 papers · 437 · h-index 12

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Silicon Carbide Semiconductor Technologies
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
  • Radiation top 10%

Papers in

C. Sandow

36 papers receiving 410 citations

Peers

C. Sandow
Comparison fields: 5 of 23
  • Electrical and Electronic Engineering 406
  • Radiation 45
  • Nuclear and High Energy Physics 57
  • Atomic and Molecular Physics, and Optics 78
  • Biomedical Engineering 104
Replace A. P. Vorobiev with:
A. P. Vorobiev Russia
Daniele Macera Italy
S. Cadeddu Italy
C. Bauer Germany
C. Gao China
M. Petcu Romania
B. Lisowski Switzerland
Martin Kellert Germany
D. Kayran United States
S. Walsh Ireland
C. Sandow relative to A. P. Vorobiev Russia A. P. Vorobiev's profile →
Citations per field
00.5×
A. P. Vorobiev · 1×
Citations per year

Countries citing papers authored by C. Sandow

Since Specialization
Citations

This map shows the geographic impact of C. Sandow's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Sandow with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Sandow more than expected).

Fields of papers citing papers by C. Sandow

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Sandow. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Sandow. The network helps show where C. Sandow may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Sandow, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Sandow Line = papers co-authored together C. Sandow links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#Work
1 200998
2 201143
3 201241
4 200828
5 200820
6 201019
7 200617
8 201016
9 201114
10 201811
11 201011
12 201311
13 20098
14
Modeling, fabrication and characterization of silicon tunnel field effect transistors
20118
15 20148
16 20088
17 20097
18 20066
19 20056
20 20116

About C. Sandow

C. Sandow is a scholar working on Electrical and Electronic Engineering, Nuclear and High Energy Physics, Atomic and Molecular Physics, and Optics, Radiation and Biomedical Engineering, having authored 37 papers that have together received 437 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Particle Detector Development and Performance (10 papers), Silicon Carbide Semiconductor Technologies (10 papers), CCD and CMOS Imaging Sensors (9 papers), Semiconductor materials and interfaces (9 papers), Radiation Detection and Scintillator Technologies (7 papers) and Electrostatic Discharge in Electronics (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (406 citations), Radiation (45 citations), Nuclear and High Energy Physics (57 citations), Atomic and Molecular Physics, and Optics (78 citations) and Biomedical Engineering (104 citations). C. Sandow has collaborated with scholars based in Germany, United States and Belgium. Frequent co-authors include S. Mantl, Qing‐Tai Zhao, Joachim Knoch, Joerg Appenzeller, St. Lenk, Saptarshi Das, Renato Amaral Minamisawa, J. T. Smith, F. Pfirsch and G. Wachutka. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, Solid-State Electronics, IEEE Electron Device Letters, IEEE Transactions on Nuclear Science and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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