J.Y.-C. Sun

3.0k citations

102 papers · 2.0k · 1 hit paper · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 98
- Semiconductor materials and devices 86
- Advancements in Semiconductor Devices and Circuit Design 74
- Integrated Circuits and Semiconductor Failure Analysis 22
- Radio Frequency Integrated Circuit Design 15
- Silicon Carbide Semiconductor Technologies 14
- Thin-Film Transistor Technologies 12
- Photonic and Optical Devices 8
Atomic and Molecular Physics, and Optics 22
- Semiconductor materials and interfaces 13

Co-authors: J.H. Comfort (25 shared papers)J.M.C. Stork (21 shared papers)E.F. Crabbé (17 shared papers)Yuan Taur (15 shared papers)K.A. Jenkins (23 shared papers)B.S. Meyerson (14 shared papers)G.L. Patton (10 shared papers)John D. Cressler (22 shared papers)
Journals: IEEE Electron Device Letters (23 papers)IEEE Transactions on Electron Devices (16 papers)IBM Journal of Research and Development (2 papers)Microelectronic Engineering (2 papers)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States Taiwan Italy

In The Last Decade

J.Y.-C. Sun

91 papers receiving 1.9k citations

J.Y.-C. Sun's Hit Papers

align trajectories log scale

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors 1990 · 369 citations

Peers

Countries citing papers authored by J.Y.-C. Sun

Since Specialization

Citations

This map shows the geographic impact of J.Y.-C. Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.Y.-C. Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.Y.-C. Sun more than expected).

Fields of papers citing papers by J.Y.-C. Sun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.Y.-C. Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.Y.-C. Sun. The network helps show where J.Y.-C. Sun may publish in the future.

Co-authors

The 25 scholars most cited alongside J.Y.-C. Sun, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.Y.-C. Sun Line = papers co-authored together J.Y.-C. Sun links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 102 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors IEEE Electron Device Letters ·G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, Joachim N. Burghartz Hit paper breakdown →	1990	369
2	Submicrometer-channel CMOS for low-temperature operation IEEE Transactions on Electron Devices ·J.Y.-C. Sun, Yuan Taur, R.H. Dennard, S. P. Klepner	1987	98
3	A high-performance 0.25- mu m CMOS technology. II. Technology IEEE Transactions on Electron Devices ·B. Davari, Wei‐Hsu Chang, Karen Petrillo, C. Y. Wong, D. Moy, Yuan Taur, M.R. Wordeman, J.Y.-C. Sun, Ching-Fang Hsu, M.R. Polcari	1992	85
4	Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs IEEE Transactions on Electron Devices ·Qian Xie, Chia-Jung Lee, Jun Xu, C. Wann, J.Y.-C. Sun, Yuan Taur	2013	80
5	On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations IEEE Transactions on Electron Devices ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, B.S. Meyerson	1993	79
6	Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependences Journal of Applied Physics ·Chih‐Tang Sah, J.Y.-C. Sun, J.J. Tzou	1983	70
7	Characteristics of SOI FET's under pulsed conditions IEEE Transactions on Electron Devices ·K.A. Jenkins, J.Y.-C. Sun, J. Gautier	1997	65
8	On the accuracy of channel length characterization of LDD MOSFET's IEEE Transactions on Electron Devices ·J.Y.-C. Sun, M.R. Wordeman, S.E. Laux	1986	56
9	Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating IEEE Electron Device Letters ·K.A. Jenkins, J.Y.-C. Sun	1995	55
10	73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters IEEE Electron Device Letters ·E.F. Crabbé, J.H. Comfort, W. Lee, John D. Cressler, B.S. Meyerson, A.C. Megdanis, J.Y.-C. Sun, J.M.C. Stork	1992	51
11	Doping of n+ and p+ polysilicon in a dual-gate CMOS process C. Y. Wong, J.Y.-C. Sun, Yuan Taur, C. S. Oh, R. Angelucci, B. Davari	1988	45
12	Source—Drain contact resistance in CMOS with self-aligned TiSi₂ IEEE Transactions on Electron Devices ·Yuan Taur, J.Y.-C. Sun, D. Moy, L.K. Wang, B. Davari, S. P. Klepner, C. Y. Ting	1987	45
13	On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues IEEE Transactions on Electron Devices ·John D. Cressler, E.F. Crabbé, J.H. Comfort, J.M.C. Stork, J.Y.-C. Sun	1993	43
14	Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors IEEE Transactions on Electron Devices ·Joachim N. Burghartz, J.Y.-C. Sun, C. Stanis, Sebastian Mäder, J.D. Warnock	1992	34
15	50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles IEEE Electron Device Letters ·J. Warnock, John D. Cressler, K.A. Jenkins, T.-C. Chen, J.Y.-C. Sun, D.D. Tang	1990	32
16	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari	1995	31
17	Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors IEEE Electron Device Letters ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, B.S. Meyerson	1991	30
18	Current gain rolloff in graded-base SiGe heterojunction bipolar transistors IEEE Electron Device Letters ·E.F. Crabbé, John D. Cressler, G.L. Patton, J.M.C. Stork, J.H. Comfort, J.Y.-C. Sun	1993	29
19	Geometry effects in MOSFET channel length extraction algorithms IEEE Electron Device Letters ·M.R. Wordeman, J.Y.-C. Sun, S.E. Laux	1985	29
20	Study of boron penetration through thin oxide with p+-polysilicon gate Symposium on VLSI Technology ·J.Y.-C. Sun, C. Y. Wong, Yuan Taur, Cheng‐Hsiang Hsu	1989	28

About J.Y.-C. Sun

J.Y.-C. Sun is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 102 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (86 papers), Advancements in Semiconductor Devices and Circuit Design (74 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Radio Frequency Integrated Circuit Design (15 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor materials and interfaces (13 papers), Thin-Film Transistor Technologies (12 papers) and Photonic and Optical Devices (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Atomic and Molecular Physics, and Optics (487 citations), Materials Chemistry (215 citations), Biomedical Engineering (167 citations) and Hardware and Architecture (24 citations). J.Y.-C. Sun has collaborated with scholars based in United States, Taiwan and Italy. Frequent co-authors include J.H. Comfort, J.M.C. Stork, E.F. Crabbé, Yuan Taur, K.A. Jenkins, B.S. Meyerson, G.L. Patton, John D. Cressler, Joachim N. Burghartz and M.R. Wordeman. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IBM Journal of Research and Development, Microelectronic Engineering and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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