E.F. Crabbé

5.0k citations

74 papers · 3.7k · 2 hit papers · h-index 24

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 74
- Advancements in Semiconductor Devices and Circuit Design 54
- Semiconductor materials and devices 51
- Radio Frequency Integrated Circuit Design 16
- Silicon Carbide Semiconductor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 11
- Photonic and Optical Devices 7
Atomic and Molecular Physics, and Optics 24
- Semiconductor Quantum Structures and Devices 14
- Semiconductor materials and interfaces 8

Co-authors: Sandip Tiwari (1 shared paper)Kevin C. Chan (1 shared paper)Farhan Rana (1 shared paper)A. Hartstein (2 shared papers)B.S. Meyerson (32 shared papers)J.H. Comfort (34 shared papers)D.L. Harame (24 shared papers)J.M.C. Stork (42 shared papers)
Journals: IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (9 papers)Applied Physics Letters (2 papers)IBM Journal of Research and Development (2 papers)Microelectronic Engineering (2 papers)
Partner nations: United States Italy South Korea

In The Last Decade

E.F. Crabbé

72 papers receiving 3.5k citations

E.F. Crabbé's Hit Papers

align trajectories log scale

A silicon nanocrystals based memory 1996 · 1.4k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1996 Applied Physics Letters
1990 IEEE Electron Device Letters

Peers

Countries citing papers authored by E.F. Crabbé

Since Specialization

Citations

This map shows the geographic impact of E.F. Crabbé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.F. Crabbé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.F. Crabbé more than expected).

Fields of papers citing papers by E.F. Crabbé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.F. Crabbé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.F. Crabbé. The network helps show where E.F. Crabbé may publish in the future.

Co-authors

The 25 scholars most cited alongside E.F. Crabbé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E.F. Crabbé Line = papers co-authored together E.F. Crabbé links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 74 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A silicon nanocrystals based memory Applied Physics Letters ·Sandip Tiwari, Farhan Rana, Hussein Hanafi, A. Hartstein, E.F. Crabbé, Kevin C. Chan Hit paper breakdown →	1996	1353
2	75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors IEEE Electron Device Letters ·G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, Joachim N. Burghartz Hit paper breakdown →	1990	395
3	Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits IEEE Transactions on Electron Devices ·D.L. Harame, J.H. Comfort, John D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, T. Tice	1995	290
4	SiGe-channel heterojunction p-MOSFET's IEEE Transactions on Electron Devices ·S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, J. B. Johnson	1994	196
5	Understanding hot-electron transport in silicon devices: Is there a shortcut? Journal of Applied Physics ·Massimo V. Fischetti, S.E. Laux, E.F. Crabbé	1995	184
6	Si/SiGe epitaxial-base transistors. II. Process integration and analog applications IEEE Transactions on Electron Devices ·D.L. Harame, J.H. Comfort, John D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, T. Tice	1995	172
7	High-mobility modulation-doped SiGe-channel p-MOSFETs IEEE Electron Device Letters ·S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, A.C. Megdanis, C. Stanis, A. A. Bright, G. M. W. Kroesen, A.C. Warren	1991	92
8	On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations IEEE Transactions on Electron Devices ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, B.S. Meyerson	1993	84
9	NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies Giuseppe La Rosa, F Guarin, Stewart E. Rauch, A. Acovic, J. Lukaitis, E.F. Crabbé	2002	80
10	CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology IEEE Transactions on Electron Devices ·H.‐S. Philip Wong, R.T. Chang, E.F. Crabbé, P. Agnello	1998	57
11	73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters IEEE Electron Device Letters ·E.F. Crabbé, J.H. Comfort, W. Lee, John D. Cressler, B.S. Meyerson, A.C. Megdanis, J.Y.-C. Sun, J.M.C. Stork	1992	54
12	On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues IEEE Transactions on Electron Devices ·John D. Cressler, E.F. Crabbé, J.H. Comfort, J.M.C. Stork, J.Y.-C. Sun	1993	45
13	An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors IEEE Electron Device Letters ·W.M. Loh, S.E. Swirhun, E.F. Crabbé, Krishna C. Saraswat, R.M. Swanson	1985	31
14	Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's IEEE Electron Device Letters ·Enrico Zanoni, E.F. Crabbé, J.M.C. Stork, Paolo Pavan, G. Verzellesi, L. Vendrame, C. Canali	1993	31
15	Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors IEEE Electron Device Letters ·John D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, B.S. Meyerson	1991	31
16	Current gain rolloff in graded-base SiGe heterojunction bipolar transistors IEEE Electron Device Letters ·E.F. Crabbé, John D. Cressler, G.L. Patton, J.M.C. Stork, J.H. Comfort, J.Y.-C. Sun	1993	29
17	Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors E.F. Crabbé, B.S. Meyerson, J.M.C. Stork, D.L. Harame	2002	28
18	High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay M. Hargrove, S. Crowder, E. Nowak, R. Logan, (unknown), H. Ng, A. Ray, D. Sinitsky, P. Smeys, F Guarin, James Oberschmidt, E.F. Crabbé, D. S. Yee, L.T. Su	2002	27
19	63-75 GHz f_T SiGe-base heterojunction bipolar technology G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbé, G. Scilla, E. de Frésart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, Joachim N. Burghartz	1990	26
20	An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation IEEE Electron Device Letters ·John D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, J.M.C. Stork	1994	26

About E.F. Crabbé

E.F. Crabbé is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 74 papers that have together received 3.7k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (54 papers), Semiconductor materials and devices (51 papers), Radio Frequency Integrated Circuit Design (16 papers), Semiconductor Quantum Structures and Devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Semiconductor materials and interfaces (8 papers) and Photonic and Optical Devices (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.5k citations), Atomic and Molecular Physics, and Optics (1.1k citations), Materials Chemistry (1.2k citations), Biomedical Engineering (589 citations) and Computational Mechanics (134 citations). E.F. Crabbé has collaborated with scholars based in United States, Italy and South Korea. Frequent co-authors include Sandip Tiwari, Kevin C. Chan, Farhan Rana, A. Hartstein, B.S. Meyerson, J.H. Comfort, D.L. Harame, J.M.C. Stork, John D. Cressler and J.Y.-C. Sun. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, IBM Journal of Research and Development and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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E.F. Crabbé

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