C. Stanis

820 citations

37 papers · 587 · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic Packaging and Soldering Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 35
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 16
- Thin-Film Transistor Technologies 8
- Electronic Packaging and Soldering Technologies 5
- Silicon and Solar Cell Technologies 5
Atomic and Molecular Physics, and Optics 19
- Semiconductor Quantum Structures and Devices 9
- Semiconductor materials and interfaces 9

Co-authors: B.S. Meyerson (14 shared papers)Joachim N. Burghartz (12 shared papers)D.L. Harame (9 shared papers)J.M.C. Stork (14 shared papers)J.Y.-C. Sun (11 shared papers)J.H. Comfort (11 shared papers)A.C. Megdanis (7 shared papers)E.F. Crabbé (9 shared papers)
Journals: IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Applied Physics (3 papers)Applied Physics Letters (2 papers)Microelectronic Engineering (2 papers)
Partner nations: United States France Switzerland

In The Last Decade

C. Stanis

36 papers receiving 571 citations

Peers

Countries citing papers authored by C. Stanis

Since Specialization

Citations

This map shows the geographic impact of C. Stanis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Stanis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Stanis more than expected).

Fields of papers citing papers by C. Stanis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Stanis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Stanis. The network helps show where C. Stanis may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Stanis, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Stanis Line = papers co-authored together C. Stanis links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High-mobility modulation-doped SiGe-channel p-MOSFETs IEEE Electron Device Letters ·S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, A.C. Megdanis, C. Stanis, A. A. Bright, G. M. W. Kroesen, A.C. Warren	1991	86
2	Roughness analysis of Si/SiGe heterostructures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·R. M. Feenstra, M. A. Lutz, Frank Stern, K. Ismail, P. M. Mooney, F. K. LeGoues, C. Stanis, J. O. Chu, B.S. Meyerson	1995	49
3	Electromigration failure due to interfacial diffusion in fine Al alloy lines Applied Physics Letters ·C-K. Hu, M. B. Small, Kenneth P. Rodbell, C. Stanis, Patricia G. Blauner, P. S. Ho	1993	35
4	The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition Journal of Applied Physics ·S. R. Stiffler, J.H. Comfort, C. Stanis, D.L. Harame, E. de Frésart, B.S. Meyerson	1991	35
5	Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors IEEE Transactions on Electron Devices ·Joachim N. Burghartz, J.Y.-C. Sun, C. Stanis, Sebastian Mäder, J.D. Warnock	1992	34
6	Electromigration Drift Velocity in Al‐Alloy and Cu‐Alloy Lines Journal of The Electrochemical Society ·C.‐K. Hu, K. Y. Lee, K. L. Lee, C. Cabral, E. G. Colgan, C. Stanis	1996	33
7	Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays The Journal of Physical Chemistry ·James R. Heath, R. Stanley Williams, J. J. Shiang, Shalom J. Wind, Junmei Chu, C. D’Emic, W. Chen, C. Stanis, J. J. Bucchignano	1996	32
8	Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology IEEE Electron Device Letters ·Joachim N. Burghartz, J.H. Comfort, G.L. Patton, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, Sebastian Mäder, C. Stanis, G. Scilla, B.J. Ginsberg	1990	25
9	113-GHz f/sub T/ graded-base SiGe HBT's IEEE Transactions on Electron Devices ·E.F. Crabbé, B.S. Meyerson, D.L. Harame, J.M.C. Stork, A.C. Megdanis, J. Cotte, J. O. Chu, M. Gilbert, C. Stanis, J.H. Comfort, G.L. Patton, S. Subbanna	1993	22
10	113-GHz f_T graded-base SiGe HBTs E.F. Crabbé, J.H. Comfort, G.L. Patton, S. Subbanna, B.S. Meyerson, D.L. Harame, J.M.C. Stork, A.C. Megdanis, J. Cotte, J. O. Chu, M. Gilbert, C. Stanis	1993	20
11	Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors Joachim N. Burghartz, J.Y.-C. Sun, Sebastian Mäder, C. Stanis, B.J. Ginsberg	1990	17
12	55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors D.L. Harame, B.S. Meyerson, E.F. Crabbé, C. Stanis, J. Cotte, J.M.C. Stork, A.C. Megdanis, G.L. Patton, S. R. Stiffler, Jeffrey B. Johnson, J.D. Warnock, J.H. Comfort, J.Y.-C. Sun	1991	17
13	Graded SiGe-Channel Modulation-Doped p-Mosfets S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, A.C. Megdanis, C. Stanis, A. A. Bright, G. M. W. Kroesen, A.C. Warren	1991	15
14	High-performance emitter-up/down SiGe HBT's IEEE Electron Device Letters ·Joachim N. Burghartz, K.A. Jenkins, Detlev Grützmacher, T. O. Sedgwick, C. Stanis	1994	14
15	Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS) IEEE Electron Device Letters ·Joachim N. Burghartz, A.C. Megdanis, John D. Cressler, J.Y.-C. Sun, C. Stanis, J.H. Comfort, K.A. Jenkins, F. Cardone	1991	14
16	The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films Journal of Applied Physics ·S. R. Stiffler, C. Stanis, Mark S. Goorsky, K. Chan, E. de Frésart	1992	14
17	Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology J.H. Comfort, G.L. Patton, John D. Cressler, W. Lee, E.F. Crabbé, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, P.-F. Lu, Joachim N. Burghartz, J. Warnock, G. Scilla, K.-Y. Toh, M. D'Agostino, C. Stanis, K.A. Jenkins	2002	14
18	SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process D.L. Harame, J.M.C. Stork, B.S. Meyerson, E.F. Crabbé, G.L. Patton, G. Scilla, E. de Frésart, A. A. Bright, C. Stanis, A.C. Megdanis, M. P. Manny, E. Petrillo, M. Dimeo, R.C. McIntosh, K. Chan	1990	10
19	Electrical and physical properties of high-Ge-content Si/SiGep-type quantum wells Physical review. B, Condensed matter ·R.A. Kiehl, Philip E. Batson, J. O. Chu, D. C. Edelstein, F. F. Fang, B. Laikhtman, D.R. Lombardi, W. T. Masselink, B.S. Meyerson, J. Nocera, A. Parsons, C. Stanis, J. C. Tsang	1993	10
20	High-performance bipolar technology for improved ECL power delay IEEE Electron Device Letters ·J. Warnock, John D. Cressler, K.A. Jenkins, C. Stanis, J.Y.-C. Sun, D.D. Tang, E. Petrillo, C.‐K. Hu	1991	9

About C. Stanis

C. Stanis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 37 papers that have together received 587 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Semiconductor Quantum Structures and Devices (9 papers), Semiconductor materials and interfaces (9 papers), Thin-Film Transistor Technologies (8 papers), Copper Interconnects and Reliability (6 papers), Electronic Packaging and Soldering Technologies (5 papers) and Silicon and Solar Cell Technologies (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (535 citations), Atomic and Molecular Physics, and Optics (200 citations), Electronic, Optical and Magnetic Materials (98 citations), Materials Chemistry (86 citations) and Biomedical Engineering (72 citations). C. Stanis has collaborated with scholars based in United States, France and Switzerland. Frequent co-authors include B.S. Meyerson, Joachim N. Burghartz, D.L. Harame, J.M.C. Stork, J.Y.-C. Sun, J.H. Comfort, A.C. Megdanis, E.F. Crabbé, Sebastian Mäder and S. R. Stiffler. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, Applied Physics Letters and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

C. Stanis

Impact in

Papers in i

In The Last Decade

C. Stanis

Peers

Countries citing papers authored by C. Stanis

Fields of papers citing papers by C. Stanis

All Works

About C. Stanis

Explore authors with similar magnitude of impact

Papers in